Dlc film deposition apparatus, semiconductor manufacturing system including the dlc film deposition apparatus, and semiconducor manufacturing method using the dlc film deposition apparatus

Abstract

A DLC film deposition apparatus comprises a chamber in which processes are performed, a substrate in the chamber, the substrate having a first surface facing the top of the chamber, and a second surface opposite to the first surface, a holder in the chamber, the holder configured to support the substrate while being in contact with part of the second surface of the substrate, and a DLC film generator below the substrate, in the chamber, the DLC film generator configured to deposit a DLC film on the second surface of the substrate, wherein the DLC film is formed on the part of the second surface of the substrate that is not in contact with the holder.

1 . A diamond-like carbon (DLC) film deposition apparatus comprising:
 a chamber;   a holder in the chamber, the holder configured to support a mounted substrate while being in contact with part of a second surface of the mounted substrate, wherein the mounted substrate is a substrate placed on the holder and having a first surface facing the top of the chamber and the second surface opposite to the first surface; and   a DLC film generator below the holder, in the chamber, the DLC film generator configured to deposit a DLC film on the second surface of the mounted substrate.   
     
     
         2 . The DLC film deposition apparatus of  claim 1 , wherein the DLC film generator includes:
 a sputtering target facing the second surface of the mounted substrate,   a sputtering target supporter having an upper surface where the sputtering target is loaded,   a gas supply configured to inject a process gas into a space between the mounted substrate and the sputtering target, and   a power supply configured to supply power to the process gas to generate plasma in the space between the mounted substrate and the sputtering target.   
     
     
         3 . The DLC film deposition apparatus of  claim 2 , wherein the sputtering target includes carbon (C). 
     
     
         4 . The DLC film deposition apparatus of  claim 1 , wherein the DLC film generator includes:
 a first showerhead facing the second surface of the mounted substrate,   a first gas supply configured to inject a first process gas into a first space between the mounted substrate and the first showerhead via the first showerhead, and   a power supply configured to supply power to the first process gas to generate plasma in the first space.   
     
     
         5 . The DLC film deposition apparatus of  claim 4 , wherein the first process gas includes a hydrocarbon gas. 
     
     
         6 . The DLC film deposition apparatus of  claim 4 , further comprising:
 a second showerhead above the substrate facing the first surface of the mounted substrate; and   a second gas supply configured to inject a second process gas into a second space between the mounted substrate and the second showerhead via the second showerhead.   
     
     
         7 . The DLC film deposition apparatus of  claim 6 , wherein the second process gas includes at least one of nitrogen (N 2 ) and argon (Ar). 
     
     
         8 . The DLC film deposition apparatus of  claim 1 , wherein a silicon film is formed between the second surface of the substrate and the DLC film. 
     
     
         9 . The DLC film deposition apparatus of  claim 8 , wherein the silicon film includes SiO 2  or SiN. 
     
     
         10 . The DLC film deposition apparatus of  claim 1 , wherein the DLC film generator is configured to deposit the DLC film having a hardness of 10 GPa to 50 GPa. 
     
     
         11 . The DLC film deposition apparatus of  claim 1 , wherein the DLC film generator is configured to deposit the DLC film having a thickness of 10 nm to 500 nm. 
     
     
         12 . A semiconductor manufacturing system comprising:
 a first chamber;   a diamond-like carbon (DLC) film deposition module configured to deposit a DLC film on a second surface of a substrate, the substrate, when disposed in the first chamber, having a first surface facing the top of the first chamber and the second surface opposite to the first surface; and   a substrate processing module including a second chamber different from the first chamber and an electrostatic chuck, the electrostatic chuck configured to support the second surface of the substrate, the substrate processing module configured to process the first surface of the substrate with the DLC film deposited on the second surface; and   a holder in the chamber and configured to support part of the second surface of the substrate while the DLC film deposition module is depositing the DLC film on the second surface of the substrate, wherein:   while the DLC film deposition module is depositing the DLC film on the second surface of the substrate, a part of the second surface of the substrate is supported by the holder in the first chamber, and   the electrostatic chuck is configured to fix the substrate such that the DLC film and an upper surface of the electrostatic chuck face each other while the substrate processing module is processing the first surface of the substrate.   
     
     
         13 . The semiconductor manufacturing system of  claim 12 , further comprising:
 a removal module configured to remove the DLC film from the substrate after the processing of the first surface of the substrate by the substrate processing module.   
     
     
         14 . A method of manufacturing a semiconductor device, the method comprising:
 depositing a diamond-like carbon (DLC) film on a second surface of a substrate, the substrate having a first surface facing the top of a first chamber, and the second surface opposite to the first surface;   in a second chamber different from the first chamber, fixing the substrate on an electrostatic chuck such that the DLC film and an upper surface of the electrostatic chuck face each other; and   processing the first surface of the substrate with the substrate clamped on the electrostatic chuck, in the second chamber.   
     
     
         15 . The method of  claim 14 ,
 wherein the depositing the DLC film on the second surface of the substrate comprises:   providing a sputtering target, which includes carbon (C), and a sputtering target supporter, which is configured to support the sputtering target, below the substrate,   injecting a process gas into a space between the substrate and the sputtering target via a gas supply,   supplying power to the process gas in the space between the substrate and the sputtering target via a power supply, and   depositing C atoms, which are obtained from a collision of the process gas supplied with the power and the sputtering target, on the second surface of the substrate.   
     
     
         16 . The method of  claim 14 , wherein the depositing the DLC film on the second surface of the substrate comprises:
 providing a first showerhead, a first gas supply configured to inject a first process gas into a first space between the substrate and the first showerhead via the first showerhead, and a power supply configured to supply power to the first process gas, below the substrate,   injecting the first process gas, which includes a hydrocarbon gas, into the first space via the first gas supply,   supplying power to the first process gas in the first space via the power supply, and   depositing C atoms, which are obtained from the supplying power to the first process gas, on the second surface of the substrate.   
     
     
         17 . The method of  claim 16 , wherein the depositing the DLC film on the second surface of the substrate, further comprises:
 providing, above the substrate, a second showerhead and a second gas supply configured to inject a second process gas into a second space between the substrate and the second showerhead via the second showerhead; and   injecting the second process gas into the second space via the second gas supply.   
     
     
         18 . The method of  claim 17 , wherein the second process gas includes at least one of nitrogen (N 2 ) and argon (Ar). 
     
     
         19 . The method of  claim 14 , further comprising:
 removing the DLC film from the substrate after the processing the first surface of the substrate,   wherein the removing the DLC film from the substrate comprises:
 providing, below the substrate, a first showerhead, a first gas supply configured to inject a first process gas into a first space between the substrate and the first showerhead via the first showerhead, and a power supply configured to supply power to the first process gas, 
 injecting the first process gas, which includes an oxygen (O 2 ) gas, into the first space via the first gas supply, 
 supplying power to the first process gas in the first space via the power supply, and 
 removing the DLC film from the substrate by causing the first process gas supplied with power to react with C atoms of the DLC film. 
   
     
     
         20 . The method of  claim 14 , wherein the processing the first surface of the substrate comprises performing at least one of etching, photolithography, and deposition processes on the first surface of the substrate. 
     
     
         21 - 32 . (canceled)