Wafer Temperature Control System and Control Method, Computer Device, and Storage Medium

Abstract

The present application provides a wafer temperature control system, including: a wafer polishing apparatus, a control module, an adjustment module, and a monitoring module. The wafer polishing device includes a polishing head having gas passages, a temperature of a wafer is adjusted by introducing a cooling gas into the gas passages. The monitoring module is configured to measure the temperature of the wafer in real time and send a generate temperature signal to the control module. The control module generates an adjustment signal used for adjusting a flow rate and introduction duration of the cooling gas. The adjustment module adjusts the flow rate and the introduction duration of the cooling gas introduced into the gas passages. According to the present application, the problem that the existing wafer cooling method cannot achieve a good cooling effect and thus leads to an impact on wafer polishing accuracy is solved.

What is claimed is: 
     
         1 . A wafer temperature control system, comprising: a wafer polishing apparatus, a control module, an adjustment module, and a monitoring module, wherein:
 the wafer polishing apparatus comprises a polishing head having gas passages, and during chemical mechanical polishing, a temperature of a wafer is adjusted by introducing a cooling gas into the gas passages;   the monitoring module is configured to measure the temperature of the wafer in real time to generate a temperature signal, and send the temperature signal to the control module;   after receiving the temperature signal, the control module generates, according to the temperature signal, an adjustment signal used for adjusting a flow rate and an introduction duration of the cooling gas, and sends the adjustment signal to the adjustment module; and   the adjustment module adjusts, according to the received adjustment signal, the flow rate and the introduction duration of the cooling gas introduced into the gas passages, so as to adjust the temperature of the wafer.   
     
     
         2 . The wafer temperature control system according to  claim 1 , wherein the polishing head comprises five independent gas passages, and during the chemical mechanical polishing, the cooling gas is introduced into all of the five independent gas passages. 
     
     
         3 . The wafer temperature control system according to  claim 2 , wherein the cooling gas comprises nitrogen or an inert gas. 
     
     
         4 . The wafer temperature control system according to  claim 1 , wherein the monitoring module comprises at least one temperature sensor. 
     
     
         5 . The wafer temperature control system according to  claim 1 , wherein the control module comprises a receiving unit, a processing unit, and a sending unit, and the receiving unit is configured to receive the temperature signal and send the temperature signal to the processing unit; and the processing unit is configured to perform an analysis calculation according to the received temperature signal to obtain the adjustment signal, and to send the adjustment signal to the adjustment module by means of the sending unit. 
     
     
         6 . The wafer temperature control system according to  claim 1 , wherein the adjustment module comprises a gas flow adjuster. 
     
     
         7 . A wafer temperature control method using the wafer temperature control system according to  claim 1 , comprising:
 step S 1 ): introducing the cooling gas, wherein the cooling gas is introduced via the gas passages of the polishing head during the chemical mechanical polishing;   step S 2 ): measuring a temperature, wherein the monitoring module measures the temperature of the wafer in real time to generate the temperature signal, and sends the temperature signal to the control module;   step S 3 ): generating and sending the adjustment signal, wherein the control module generates, according to the received temperature signal, the adjustment signal for adjusting the flow rate and the introduction duration of the cooling gas, and sends the adjustment signal to the adjustment module; and   step  4 ): adjusting the flow rate and the introduction duration of the cooling gas, wherein the adjustment module adjusts the flow rate and the introduction duration of the cooling gas according to the received adjustment signal.   
     
     
         8 . A computer device, comprising a processor and a memory, wherein the processor is adapted to implement various instructions, and the memory is adapted to store a plurality of instructions, the instructions being adapted to be loaded by the processor and to perform the wafer temperature control method according to  claim 7 . 
     
     
         9 . A non-transitory computer-readable storage medium, storing computer executable instructions which, when executed, implement the wafer temperature control method according to  claim 7 .