Organic light emitting diode display device including measurement hole and method of fabricating the same

Abstract

An organic light emitting diode display device includes a subpixel on a substrate, and a circuit part in the subpixel on the substrate. Further, a plurality of conductive lines are connected to the circuit part, and an overcoat layer is disposed on the plurality of conductive lines. The overcoat layer has a measurement hole corresponding to at least one of the plurality of conductive lines. Also, a light emitting diode connected to the circuit part is disposed on the overcoat layer.

What is claimed is: 
     
         1 . An organic light emitting diode display device, comprising:
 a subpixel on a substrate;   a circuit part in the subpixel on the substrate;   a plurality of conductive lines connected to the circuit part;   an overcoat layer on the plurality of conductive lines, the overcoat layer having a measurement hole corresponding to at least one of the plurality of conductive lines; and   a light emitting diode on the overcoat layer, the light emitting diode connected to the circuit part.   
     
     
         2 . The organic light emitting diode display device of  claim 1 , further comprising a bank layer disposed on the overcoat layer and filling the measurement hole of the overcoat layer. 
     
     
         3 . The organic light emitting diode display device of  claim 1 , wherein the overcoat layer has a measurement groove corresponding to at least one of the plurality of conductive lines, and
 wherein the measurement groove is spaced apart from the measurement hole.   
     
     
         4 . The organic light emitting diode display device of  claim 1 , wherein the circuit part comprises:
 a light shielding layer;   a buffer layer on the light shielding layer;   a transistor on the buffer layer; and   a passivation layer on the transistor,   wherein the measurement hole exposes a top surface of the passivation layer corresponding to at least one of the plurality of conductive lines.   
     
     
         5 . The organic light emitting diode display device of  claim 4 , wherein the plurality of conductive lines include one or more of a gate line, a data line, a power line and a reference line. 
     
     
         6 . The organic light emitting diode display device of  claim 4 , wherein the power line has a same layer and a same material as the light shielding layer, and
 wherein the measurement hole is disposed over the power line.   
     
     
         7 . The organic light emitting diode display device of  claim 3 , further comprising:
 a plurality of microlenses on the overcoat layer and corresponding to the light emitting diode.   
     
     
         8 . The organic light emitting diode display device of  claim 7 , wherein the measurement groove has a shape corresponding to the plurality of microlenses and is used for monitoring the plurality of microlenses. 
     
     
         9 . The organic light emitting diode display device of  claim 1 , wherein the measurement hole has a width greater than a diameter of an incident light of a spectrometer. 
     
     
         10 . The organic light emitting diode display device of  claim 1 , wherein a connecting portion of a top surface of the overcoat layer and a sidewall of the measurement hole has a sharp shape having an acute angle. 
     
     
         11 . The organic light emitting diode display device of  claim 3 , further comprising:
 a passivation layer disposed between the overcoat layer and the power line,   wherein the measurement hole exposes a portion of the passivation layer corresponding to the power line.   
     
     
         12 . The organic light emitting diode display device of  claim 3 , wherein both the measurement hole and the measurement groove are disposed above the power line. 
     
     
         13 . The organic light emitting diode display device of  claim 3 , wherein the measurement hole is a thru-hole and the measurement grove is an indentation. 
     
     
         14 . A method of fabricating an organic light emitting diode display device, the method comprising:
 forming a circuit part in a subpixel on a substrate;   forming a plurality of conductive lines that are connected to the circuit part;   forming an overcoat layer having a measurement hole corresponding to at least one of the plurality of conductive lines on the plurality of conductive lines; and   forming a light emitting diode connected to the circuit part on the overcoat layer.   
     
     
         15 . The method of  claim 14 , further comprising:
 forming a first photoresist pattern having a photoresist hole on the overcoat layer, the photoresist hole exposing the overcoat layer corresponding to at least one of the plurality of conductive lines;   forming a second photoresist pattern on the overcoat layer and a measurement groove in the overcoat layer by performing a first ashing step to the first photoresist pattern and the overcoat layer, wherein the measurement groove corresponds to the photoresist hole; and   forming a third photoresist pattern by performing a second ashing step to the second photoresist pattern and the overcoat layer, wherein the third photoresist pattern exposes a top surface of the overcoat layer.   
     
     
         16 . The method of  claim 15 , further comprising:
 determining a first thickness of the first photoresist pattern by irradiating an incident light of a spectrometer onto the first photoresist pattern corresponding to the measurement hole;   determining a second thickness of the overcoat layer by irradiating the incident light of the spectrometer onto the overcoat layer corresponding to the photoresist hole;   determining a third thickness of the second photoresist pattern by irradiating the incident light of the spectrometer onto the second photoresist pattern corresponding to the measurement hole;   determining a fourth thickness of the overcoat layer of the measurement groove by irradiating the incident light of the spectrometer onto the overcoat layer of the measurement groove exposed through the photoresist hole of the second photoresist pattern; and   determining a fifth thickness of the overcoat layer of the measurement groove by irradiating the incident light of the spectrometer onto the overcoat layer onto the overcoat layer of the measurement groove exposed through the third photoresist pattern.   
     
     
         17 . The method of  claim 16 , wherein each of the measurement hole and the measurement groove has a width greater than a diameter of the incident light of the spectrometer. 
     
     
         18 . The method of  claim 16 , further comprising:
 determining an ashing amount of the first photoresist pattern from a value obtained by subtracting the third thickness from the first thickness;   determining an ashing rate of the first photoresist pattern by dividing the ashing amount of the first photoresist pattern by a process time of the first ashing step;   determining an ashing amount of the overcoat layer from a value obtained by subtracting the fourth thickness from the second thickness;   determining an ashing rate of the overcoat layer by dividing the ashing amount of the overcoat layer by the process time of the first ashing step; and   determining a total ashing amount of the overcoat layer from a value obtained by subtracting the fifth thickness from the second thickness.   
     
     
         19 . The method of  claim 15 , wherein the forming the overcoat layer includes:
 forming a plurality of microlenses on a top surface of the overcoat layer corresponding to the light emitting diode.   
     
     
         20 . The method of  claim 19 , further comprising:
 monitoring the plurality of microlenses by measuring the measurement groove having a shape corresponding to the plurality of microlenses.