Resist composition and method for forming resist pattern

Abstract

A resist composition including a resin component (A1) which has a constitutional unit (a0) containing a photodegradable base that is decomposed upon light exposure and loses acid diffusion controllability, and an acid generator component (B) which contains a compound (BO) represented by General Formula (b0) in which X 0 represents a bromine atom or an iodine atom, R m represents a hydroxy group, an alkyl group, a fluorine atom, or a chlorine atom, nb1 represents an integer of 1 to 5, and nb2 represents an integer of 0 to 4, where 1≤nb1+nb2≤5 is satisfied, Yb 0 represents a divalent linking group or a single bond, Vb 0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R 0 represents a hydrogen atom, a fluorinated alkyl group having 1 to 5 carbon atoms, or a fluorine atom, M m+ represents an m-valent organic cation, and m represents an integer of 1 or greater

What is claimed is: 
     
         1 . A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition comprising:
 a resin component (A1) whose solubility in the developing solution is changed due to the action of the acid; and   an acid generator component (B) which generates the acid upon light exposure,   wherein the resin component (A1) has at least one constitutional unit (a0) selected from the group consisting of a constitutional unit (a01) represented by General Formula (a0-1) and a constitutional unit (a02) represented by General Formula (a0-2), and   the acid generator component (B) contains a compound (B0) represented by General Formula (b0):   
       
         
           
           
               
               
           
         
         wherein in Formula (a0-1), R 01  represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Lao 0  represents a single bond, —C(═O)—O—, —C(═O)—N(R L   01 )—, or —S(═O) 2 —, R L   01  represents a hydrogen atom or a methyl group, Ya 01  represents a single bond or a divalent linking group, Ra 011  represents an arylene group which may have a substituent, an alkylene group which may have a substituent, or an alkenylene group which may have a substituent, Ra 012  and Ra 013  each independently represent an aryl group which may have a substituent, an alkyl group which may have a substituent, or an alkenyl group which may have a substituent, Ra 011  to Ra 013  may be bonded to each other to form a ring together with the sulfur atom in the formula, and Ra 014  represents a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, 
         in Formula (a0-2), R 02  represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, La 02  represents a single bond, —C(═O)—O—, —C(═O)—N(R L   02 )—, or —S(═O) 2 —, R L   02  represents a hydrogen atom or a methyl group, Ya 02  represents a single bond or a divalent linking group, R a024  represents a single bond or a divalent cyclic group, Ra 021  to Ra 023  each independently represent an aryl group which may have a substituent, an alkyl group which may have a substituent, an alkenyl group which may have a substituent, and Ra 021  to Ra 023  may be bonded to each other to form a ring together with the sulfur atom in the formula], 
       
       
         
           
           
               
               
           
         
         wherein X 0  represents a bromine atom or an iodine atom, R m  represents a hydroxy group, an alkyl group, a fluorine atom, or a chlorine atom, nb1 represents an integer of 1 to 5, and nb2 represents an integer of 0 to 4, where 1≤nb1+nb2≤5 is satisfied, Yb 0  represents a divalent linking group or a single bond, Vb 0  represents a single bond, an alkylene group, or a fluorinated alkylene group, R 0  represents a hydrogen atom, a fluorinated alkyl group having 1 to 5 carbon atoms, or a fluorine atom, M m+  represents an m-valent organic cation, and m represents an integer of 1 or greater. 
       
     
     
         2 . The resist composition according to  claim 1 ,
 wherein the compound (B0) includes a compound (B01) represented by General Formula (b0-1):   
       
         
           
           
               
               
           
         
         wherein X 0  represents a bromine atom or an iodine atom, R m  represents a hydroxy group, an alkyl group, a fluorine atom, or a chlorine atom, nb1 represents an integer of 1 to 5, and nb2 represents an integer of 0 to 4, where 1≤nb1+nb2≤5 is satisfied, L 01  and L 02  each independently represent a single bond, an alkylene group, —O—, —CO—, —OCO—, —COO—, —SO 2 —, —C(R b )═N—, or —CON(R b )—, R b  represents a hydrogen atom or an alkyl group, z represents an integer of 0 to 10, Vb 0  represents a single bond, an alkylene group, or a fluorinated alkylene group, R 0  represents a hydrogen atom, a fluorinated alkyl group having 1 to 5 carbon atoms, or a fluorine atom, M m+  represents an m-valent organic cation, and m represents an integer of 1 or greater. 
       
     
     
         3 . The resist composition according to  claim 1 ,
 wherein a proportion of the constitutional unit (a0) in the resin component (A1) is in a range of 5% to 15% by mole with respect to a total amount (100% by mole) of all constitutional units constituting the resin component (A1).   
     
     
         4 . The resist composition according to  claim 1 ,
 wherein the resin component (A1) further h-as comprises a constitutional unit (a2) containing a lactone-containing cyclic group, a —SO 2 -containing cyclic group, or a carbonate-containing cyclic group.   
     
     
         5 . A resist pattern formation method, comprising:
 forming a resist film on a support using the resist composition according to  claim 1 ;   exposing the resist film to light; and   developing the resist film exposed to light to form a resist pattern.   
     
     
         6 . The resist pattern formation method according to  claim 5 ,
 wherein the resist film is exposed to an extreme ultraviolet ray (EUV) or an electron beam (EB) in exposing the resist film to light.