Display device and manufacturing method thereof

Abstract

A display device may include a first electrode above a surface of a substrate, light-emitting elements including a first end portion above, contacting, and electrically connected to, the first electrode, a second end portion opposite to the first end portion with respect to a direction that is perpendicular to the surface of the substrate, a bonding electrode, a second layer, an active layer, a first layer, and a third layer having conductivity by doping an impurity into an intrinsic semiconductor layer, an intermediate layer over the light-emitting elements, and exposing the second end portion, and a second electrode above the intermediate layer, and contacting and electrically connected to the second end portion.

What is claimed is: 
     
         1 . A display device comprising:
 a first electrode above a surface of a substrate;   light-emitting elements comprising:
 a first end portion above, contacting, and electrically connected to, the first electrode; 
 a second end portion opposite to the first end portion with respect to a direction that is perpendicular to the surface of the substrate; 
 a bonding electrode; 
 a second layer; 
 an active layer; 
 a first layer; and 
 a third layer having conductivity by doping an impurity into an intrinsic semiconductor layer; 
   an intermediate layer over the light-emitting elements, and exposing the second end portion; and   a second electrode above the intermediate layer, and contacting and electrically connected to the second end portion.   
     
     
         2 . The display device of  claim 1 , wherein the bonding electrode is at the first end portion, and electrically connected to the first electrode, and
 wherein the third layer is at the second end portion, and electrically connected to the second electrode.   
     
     
         3 . The display device of  claim 2 , wherein the first layer comprises an n-type semiconductor layer, and the second layer comprises a p-type semiconductor layer. 
     
     
         4 . The display device of  claim 3 , wherein the intermediate layer comprises an organic layer. 
     
     
         5 . The display device of  claim 4 , further comprising:
 a first bank defining an opening above the first electrode to expose an area of the first electrode; and   a cover layer above the second electrode.   
     
     
         6 . The display device of  claim 5 , wherein the intermediate layer is between the first bank and the light-emitting elements in the opening of the first bank in plan view, thereby fixing the light-emitting elements, and has a flat surface. 
     
     
         7 . The display device of  claim 5 , further comprising:
 a color conversion layer comprising a color conversion pattern above the cover layer and corresponding to the light-emitting elements, and a second bank adjacent to the color conversion pattern, above the cover layer, and corresponding to the first bank; and   a color filter layer above the color conversion layer, and configured to selectively transmit light emitted from the color conversion layer.   
     
     
         8 . The display device of  claim 1 , further comprising a conductive pattern between the first electrode and the first end portion of the light-emitting elements. 
     
     
         9 . A display device comprising:
 a substrate comprising an emission area and a non-emission area;   a passivation layer above a surface of the substrate;   a (1-1)th electrode, a (1-2)th electrode, and a (1-3)th electrode above the passivation layer, and spaced apart;   a first bank above the (1-1)th electrode, the (1-2)th electrode, the (1-3)th electrode, and the passivation layer, and defining an opening exposing respective areas of the (1-1)th electrode, the (1-2)th electrode, and the (1-3)th electrode;   first light-emitting elements comprising a first end portion above, contacting, and electrically connected to the (1-1)th electrode, and a second end portion opposite to the first end portion in a direction perpendicular to the surface of the substrate;   second light-emitting elements comprising a first end portion above, contacting, and electrically connected to the (1-2)th electrode, and a second end portion opposite to the first end portion in the direction perpendicular to the surface of the substrate;   third light-emitting elements each comprising a first end portion above, contacting, and electrically connected to the (1-3)th electrode, and a second end portion opposite to the first end portion in the direction perpendicular to the surface of the substrate;   an intermediate layer over the first light-emitting elements, the second light-emitting elements, the third light-emitting elements, and the first bank, and exposing the second end portions of the first light-emitting elements, the second light-emitting elements, and the third light-emitting elements; and   a second electrode above the intermediate layer, contacting the second end portions of the first light-emitting elements, the second light-emitting elements, and the third light-emitting elements, and electrically connected to the first light-emitting elements, the second light-emitting elements, and the third light-emitting elements,   wherein the first light-emitting elements, the second light-emitting elements, and the third light-emitting elements comprise a bonding electrode, a second layer, an active layer, a first layer, and a third layer, which has conductivity by doping an impurity into an intrinsic semiconductor layer, that are sequentially arranged toward the second electrode.   
     
     
         10 . The display device of  claim 9 , wherein the bonding electrode is at the first end portion, and is electrically connected to a respective one of the (1-1)th electrode, the (1-2)th electrode, and the (1-3)th electrode, and
 wherein the third layer is at the second end portion, and is electrically connected to the second electrode.   
     
     
         11 . The display device of  claim 9 , wherein the first layer comprises an n-type semiconductor layer, and the second layer comprises a p-type semiconductor layer. 
     
     
         12 . A method of manufacturing a display device, the method comprising:
 forming a first electrode above a surface of a substrate;   forming, above the first electrode, a first bank defining an opening exposing an area of the first electrode;   preparing light-emitting elements comprising a first end portion, and a second end portion that is opposite to the first end portion;   transferring the light-emitting elements such that the first end portion contacts the first electrode;   forming a metal layer over the light-emitting elements;   forming, above the metal layer, a photosensitive pattern exposing an area of the metal layer corresponding to the second end portion;   forming a metal pattern exposing the second end portion by removing the area of the metal layer through an etching process using the photosensitive pattern as an etching mask;   exposing the metal pattern by removing the photosensitive pattern;   doping the metal pattern and the second end portion with an impurity;   exposing the light-emitting elements and the first bank by removing the metal pattern; and   forming an intermediate layer over the light-emitting elements and the first bank.   
     
     
         13 . The method of  claim 12 , wherein the forming of the intermediate layer comprises:
 coating an intermediate base layer over the light-emitting elements and the first bank;   curing the intermediate base layer; and   exposing the second end portion by removing a portion of the intermediate base layer through an ashing process.   
     
     
         14 . The method of  claim 13 , wherein the intermediate layer comprises an organic layer. 
     
     
         15 . The method of  claim 14 , further comprising forming, above the intermediate layer, a second electrode contacting the second end portion to be electrically connected to the light-emitting elements. 
     
     
         16 . The method of  claim 15 , wherein the light-emitting elements comprise a bonding electrode at the first end portion and contacting the first electrode, a second layer above the bonding electrode, an active layer above the second layer, a first layer above the active layer, and a third layer above the first layer, at the second end portion, and contacting the second electrode. 
     
     
         17 . The method of  claim 16 , wherein, in the transferring of the light-emitting elements, the first layer comprises an n-type semiconductor layer, the second layer comprises a p-type semiconductor layer, and the third layer comprises an intrinsic semiconductor layer. 
     
     
         18 . The method of  claim 17 , wherein, in the doping the metal pattern and the second end portion, the third layer has conductivity by doping the impurity into the intrinsic semiconductor layer. 
     
     
         19 . The method of  claim 12 , wherein, in the doping the metal pattern and the second end portion, the metal pattern comprises a barrier layer covering the first bank, the first electrode, and a side of the light-emitting elements. 
     
     
         20 . The method of  claim 12 , wherein the metal layer comprises at least one of indium zinc oxide, aluminum, and/or indium gallium zinc oxide.