Nanowires network

Abstract

The present invention refers to a method for preparing a network of nanowires; to a network of nanowires obtainable by said method; to a nonwoven material comprising the network, to an electrode comprising the network, to the use of the network of nanowires and to the use of the nonwoven material.

1 - 14 . (canceled) 
     
     
         15 . A method for preparing a network of nanowires comprising the steps of:
 i. providing a gas flow mixture to a reaction vessel, said gas flow mixture comprising:
 at least one precursor compound comprising at least one element selected from Si, Ge, Cu, Zn, Cd, Ga, In, As, Se, Ni, Ta, Pt, Mo, W, N, O, Co, Mn, Li and Te; wherein the at least one precursor compound is an hydride or organometallic compound; and 
 metallic catalyst particles comprising one or more elements selected from Au, Ag, Cu, Fe, Ni, Ga, Co, Pt, In and Al; 
   wherein the at least one precursor compound is in the gas flow mixture in a mole fraction (xi) of at least 0.005;   wherein the temperature inside the reaction vessel is in a range of between 1250 to 1450° C.; and   wherein the at least one precursor compound decomposes under the temperature inside the reaction vessel and grows on the metallic catalyst particles,   to form a network of nanowires;   wherein the network of nanowires comprises solid nanowires, hollow nanowires or mixtures thereof.   
     
     
         16 . The method according to  claim 15 , wherein the at least one precursor compound decomposes under the temperature inside the reaction vessel and grows on the metallic catalyst particles by vapor liquid-solid (VLS) and/or solid-liquid-solid (SLS) and/or chemical vapor deposition (CVD). 
     
     
         17 . The method according to  claim 15 , wherein the gas flow mixture of step (i) is generated by the following steps:
 (a) providing a mixture comprising:
 the at least one precursor compound comprising at least one element selected from Si, Ge, Cu, Zn, Cd, Ga, In, As, Se, Ni, Ta, Pt, Mo, W, N, O, Co, Mn, Li and Te; wherein the at least one precursor compound is an hydride or organometallic compound; and 
 a metallic catalyst particle precursor comprising one or more elements selected from Au, Ag, Cu, Fe, Ni, Ga, Co, Pt, In and Al; and 
   (b) injecting the mixture into the reaction vessel to form the gas flow mixture of step (i).   
     
     
         18 . The method according to  claim 15 ,
 wherein the at least one precursor compound comprises at least one element selected from Si, Ge, Pt, Mo, W, Co, Mn, Li and Te; and   wherein the metallic catalyst particles consist of one or more elements selected from Au, Ag, Cu, Fe, Co and Pt.   
     
     
         19 . The method according to  claim 15 , wherein the at least one precursor compound is a silane or silane derivative. 
     
     
         20 . The method according to  claim 15 , wherein the gas flow mixture comprises H 2 . 
     
     
         21 . The method according to  claim 15 , wherein the temperature inside the reaction vessel is in a range of between 1260 to 1400° C. 
     
     
         22 . The method according to  claim 15 , wherein the method comprises a further step (ii) of collecting the network of nanowires. 
     
     
         23 . The method according to  claim 22 , wherein the further step (ii) of collecting the network of nanowires is done by spinning and winding the network of nanowires on a bobbin. 
     
     
         24 . A network of nanowires obtainable by the method according to  claim 15 , wherein the aspect ratio of the nanowires of the network of nanowires is at least 300; wherein the network of nanowires of the present invention comprises at least an 80% volume of nanowires of the total volume of the network; wherein the nanowires are entangled and wherein the network of nanowires is self-standing. 
     
     
         25 . The network of nanowires according to  claim 24 , wherein the aspect ratio of the nanowires is at least 400; wherein the length of the nanowires is at least 10 microns; wherein the nanowires of the network of nanowires are solid continuous crystalline nanowires; and wherein the network of nanowires of the present invention comprises at least an 80% volume of crystalline nanowires of the total volume of the network. 
     
     
         26 . The network of nanowires according to  claim 24 , wherein the network of nanowires has a porosity of between 60 and 97%. 
     
     
         27 . The network of nanowires according to  claim 24 , wherein the nanowires consist of Si, SiC, Ge or SixGe1−x and SiOx, wherein 0≤x≤1. 
     
     
         28 . A nonwoven material comprising at least two layers of the network of nanowires as defined in  claim 24 . 
     
     
         29 . An electrode comprising the network of nanowires according to  claim 24  or the nonwoven material according to  claim 28 ; and an electrical connection or a current collector.