Copper alloy sheet material and method for producing the copper alloy sheet material

Abstract

There is provided a copper alloy sheet material, containing: 0.0005% by mass or more and 0.1% by mass or less of Ni, 0.0005% by mass or more and 0.1% by mass or less of Sn, 100 ppm or less of C, 800 ppm or less of O, 10 ppm or less of H, and 50 ppm or less of Ag, with a balance being Cu and impurities, wherein a total content of Ni and Sn is 0.001% by mass or more and 0.11% by mass or less, and when a content of the impurities is expressed as A to B (ppm) in consideration of a quantitative lower limit of each element (here, A is a total impurity content when a content of elements less than the quantitative lower limit is deemed 0 ppm, and B is a total impurity content when a content of the element less than the quantitative lower limit is deemed the quantitative lower limit of each element), A is 100 or less and B is 250 or less.

1 . A copper alloy sheet material, containing 0.0005% by mass or more and 0.1% by mass or less of Ni, 0.0005% by mass or more and 0.1% by mass or less of Sn, 100 ppm or less of C, 800 ppm or less of 0, 10 ppm or less of H, and 50 ppm or less of Ag, with a balance being Cu and impurities,
 wherein a total content of the Ni and the Sn is 0.001% by mass or more and 0.11% by mass or less, and   when a content of the impurities are expressed as A to B (ppm) in consideration of a quantitative lower limit of each element (here, A is a total impurity content when a content of an element less than the quantitative lower limit is deemed 0 ppm, and B is a total impurity content when a content of the element less than the quantitative lower limit is deemed the quantitative lower limit of each element), A is 100 or less and B is 250 or less.   
     
     
         2 . The copper alloy sheet material according to  claim 1 , containing 1 to 50 ppm of S. 
     
     
         3 . The copper alloy sheet material according to  claim 1 , wherein conductivity of the copper alloy sheet material is 92 to 102% IACS. 
     
     
         4 . The copper alloy sheet material according to  claim 1 , wherein an average crystal grain size of the copper alloy sheet material is 1 to 30 μm. 
     
     
         5 . The copper alloy sheet material according to  claim 1 , wherein a ratio (HV 1 /HV 0 ) of Vickers hardness HV 1  after holding the copper alloy sheet material at 350° C. for 5 minutes in the atmosphere, with respect to Vickers hardness HV 0  of the copper alloy sheet material before holding, is 0.80 or more. 
     
     
         6 . The copper alloy sheet material according to  claim 1 , wherein the copper alloy sheet material has an average crystal grain size of 100 μm or less after being held at 800° C. for 1 hour. 
     
     
         7 . A method for producing a copper alloy sheet material, comprising:
 applying hot-rolling to a copper alloy; then,   applying cold-rolling to the copper alloy;   applying recrystallization-annealing to the cold-rolled copper alloy; then,   applying final cold-rolling to the copper alloy,   the copper alloy containing: 0.0005% by mass or more and 0.1% by mass or less of Ni, 0.0005% by mass or more and 0.1% by mass or less of Sn, 100 ppm or less of C, 800 ppm or less of O, 10 ppm or less of H, and 50 ppm or less of Ag, with a balance being Cu and impurities,   wherein a total content of the Ni and the Sn is 0.001% by mass or more and 0.11% by mass or less, and   when a content of the impurities is expressed as A to B (ppm) in consideration of a quantitative lower limit of each element (here, A is a total impurity content when a content of an element less than a quantitative lower limit is deemed 0 ppm, and B is a total impurity content when a content of the element less than the quantitative lower limit is deemed the quantitative lower limit of each element), A is 100 or less and B is 250 or less.   
     
     
         8 . A heat dissipating part in which the copper alloy sheet material of  claim 1  is used. 
     
     
         9 . An electronic part in which the copper alloy sheet material according to  claim 1  is bonded to an insulating substrate.