Nonvolatile memory device, storage device including the same, and method of operating the same

Abstract

A nonvolatile memory device comprising a charge pump circuit with pump units connected in series that receives an external voltage for charge pumping and outputs a pump voltage in stages according to stage control signals, a switching circuit that controls the charge pump circuit to output pumping voltages in response to switch control signals, a stage controller that outputs the stage control signals and the switch control signals based on a temperature code, and a digital temperature sensor that generates the temperature code.

1 . A nonvolatile memory device, comprising:
 a charge pump circuit including pump units connected in series configured to receive an external voltage and to perform a charge pumping operation, and configured to output a pump voltage by forming stages corresponding to the number of pump units connected in series in response to stage control signals;   a switching circuit configured to control the charge pump circuit to output pumping voltages of the pump units in response to switch control signals;   a stage controller configured to output the stage control signals and the switch control signals according to a temperature code; and   a digital temperature sensor configured to generate the temperature code.   
     
     
         2 . The nonvolatile memory device of  claim 1 , wherein the stage controller varies the number of stages according to the temperature code. 
     
     
         3 . The nonvolatile memory device of  claim 1 , wherein the stage controller forms stages in which the number of pump units increasing per unit time is the same. 
     
     
         4 . The nonvolatile memory device of  claim 1 , wherein the stage controller forms stages in which the numbers of pump units increasing per unit time is different. 
     
     
         5 . The nonvolatile memory device of  claim 1 , wherein the stage controller varies the number of pump units included in a starting stage according to the temperature code. 
     
     
         6 . The nonvolatile memory device of  claim 1 ,
 wherein the stage controller outputs the switch control signals per unit time, and   wherein the unit time varies according to the temperature code.   
     
     
         7 . The nonvolatile memory device of  claim 1 , wherein a read time (tR) or a program time (tPROG) varies according to the temperature code. 
     
     
         8 . The nonvolatile memory device of  claim 1 , wherein the digital temperature sensor includes:
 a temperature detector configured to generate a voltage signal or a current signal corresponding to a temperature of a predetermined region of the nonvolatile memory device; and   a code generator configured to generate the temperature code corresponding to the voltage signal or the current signal.   
     
     
         9 . The nonvolatile memory device of  claim 1 , further comprising:
 a wordline voltage generator configured to generate a wordline voltage using the pump voltage.   
     
     
         10 . The nonvolatile memory device of  claim 1 , wherein the stage controller is activated in response to a command received from an external device. 
     
     
         11 . A method of operating a nonvolatile memory device, the method comprising:
 sensing a temperature by a digital temperature sensor;   determining a pump stage in response to a temperature code corresponding to the sensed temperature; and   generating a wordline voltage using a pump voltage according to the determined pump stage.   
     
     
         12 . The method of  claim 11 , wherein the determining the pump stage includes determining a number of pump units connected in series. 
     
     
         13 . The method of  claim 11 , wherein the determining the pump stage further includes changing the pump stage per unit time. 
     
     
         14 . The method of  claim 13 , wherein the determining the pump stage further includes varying the unit time according to the temperature code. 
     
     
         15 . The method of  claim 11 , wherein the generating a wordline voltage includes generating the wordline voltage by dividing the pump voltage by a resistance. 
     
     
         16 . A storage device, comprising:
 at least one nonvolatile memory device; and   a controller configured to control the at least one nonvolatile memory device,   wherein the at least one nonvolatile memory device includes:   a plurality of memory blocks including a plurality of memory cells connected to wordlines and bitlines;   a digital temperature sensor configured to sense a temperature of at least one predetermined region of the at least one nonvolatile memory device and to generate a temperature code; and   a control logic circuit configured to perform an on-chip thermal throttling operation according to the temperature code, and   wherein the on-chip thermal throttling operation controls timing of a wordline voltage applied to at least one of the wordlines.   
     
     
         17 . The storage device of  claim 16 , further comprising:
 a voltage generator configured to generate the wordline voltage,   wherein the voltage generator includes charge pumps connected in series.   
     
     
         18 . The storage device of  claim 17 , wherein the control logic circuit forms stages corresponding to the number of charge pumps connected in series per unit time. 
     
     
         19 . The storage device of  claim 18 , wherein the control logic circuit adjusts the unit time or varies the number of stages according to the temperature code. 
     
     
         20 . The storage device of  claim 16 , wherein the controller performs an off-chip thermal throttling operation based on temperature information. 
     
     
         21 - 25 . (canceled)