US2024191360A1PendingUtilityA1

Chemical solution for removing precious metal, method for manufacturing chemical solution, method for treating substrate, method for manufacturing semiconductor device

65
Assignee: TOKYO OHKA KOGYO CO LTDPriority: Dec 9, 2022Filed: Dec 4, 2023Published: Jun 13, 2024
Est. expiryDec 9, 2042(~16.4 yrs left)· nominal 20-yr term from priority
Inventors:Kazuhiro Takahashi
C23F 1/30
65
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A chemical solution for removing a precious metal includes a cerium-containing oxidizing agent (A), an acid component (B) that is two or more acid components having different pKa's one another, provided that perchloric acid is excluded, and water.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A chemical solution for removing a precious metal, the chemical solution comprising:
 a cerium-containing oxidizing agent (A);   an acid component (B) that is two or more acid components having different pKa's one another, provided that perchloric acid is excluded; and   water.   
     
     
         2 . The chemical solution according to  claim 1 ,
 wherein the acid component (B) is two or more components selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, carbonic acid, carboxylic acid, sulfonic acid, and salts of these acids.   
     
     
         3 . The chemical solution according to  claim 1 ,
 wherein a number of moles (Am) of the cerium-containing oxidizing agent (A) per 100 ml of the chemical solution and a number of moles (Bm) of the acid component (B) per 100 mL of the chemical solution satisfy a condition below,
   1.0×10 −8   ≤Am×Bm≤ 1.0×10 0 .
 
   
     
     
         4 . The chemical solution according to  claim 1 ,
 wherein the precious metal is ruthenium, iridium, or platinum.   
     
     
         5 . The chemical solution according to  claim 1 ,
 wherein the acid component (B) comprises sulfonic acid or a salt of sulfonic acid.   
     
     
         6 . A method for manufacturing the chemical solution according to  claim 1 , the method comprising:
 dissolving the cerium-containing oxidizing agent (A) and the acid component (B) in water.   
     
     
         7 . A method for treating a substrate, the method comprising:
 bringing the chemical solution according to  claim 1  into contact with a substrate on which a precious metal is exposed on the surface to remove at least a part of the precious metal from the substrate.   
     
     
         8 . A method for manufacturing a semiconductor device, the method comprising:
 treating a substrate by the method for treating a substrate according to claim  7 .

Join the waitlist — get patent alerts

Track US2024191360A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.