Combination of strain management layers for light emitting elements

Abstract

The disclosure describes various aspects of strain management layers for light emitting elements such as light-emitting diodes (LEDs). The present disclosure describes an LED structure formed on a substrate and having a strain management region supported on the substrate, and an active region configured to provide a light emission associated with the LED structure. The strain management region includes a first layer including a superlattice having a plurality of repeated first and second sublayers, and a second layer including a bulk layer. In an embodiment, at least one of the first and second sublayers and the bulk layer includes a composition of In x Al y Ga 1-x-y N. A device having multiple LED structures and a method of making the LED structure are also described.

1 . A structure, comprising:
 a semiconductor substrate;   a strain management region on the semiconductor substrate; and   an active region on the strain management region, the active region configured to emit light of a first wavelength from a quantum well structure and light of a second wavelength from a micro-quantum well structure, the first wavelength being different from the first wavelength.   
     
     
         2 . The structure of  claim 1 , wherein the semiconductor substrate is a semiconductor template that includes an n-type gallium nitride layer. 
     
     
         3 . The structure of  claim 1 , further comprising a p-doped layer that provides an electrical contact to the active region. 
     
     
         4 . The structure of  claim 3 , further comprising an electron blocking layer between the p-doped layer and the active region. 
     
     
         5 . The structure of  claim 4 , wherein the electron blocking layer includes AlGaN. 
     
     
         6 . The structure of  claim 1 , wherein the strain management region includes an ultraviolet superlattice. 
     
     
         7 . The structure of  claim 6 , wherein the strain management region further includes a spacer layer between the ultraviolet superlattice and the semiconductor substrate. 
     
     
         8 . The structure of  claim 6 , wherein the strain management region further includes a barrier layer between the ultraviolet superlattice and the active region. 
     
     
         9 . A method, comprising:
 forming an ultraviolet superlattice on a semiconductor substrate;   forming a light-emitting layer of a first wavelength over the ultraviolet superlattice;   forming a light-emitting layer of a second wavelength over the light-emitting layer of the first wavelength; and   forming a p-type layer over the light-emitting layer of the second wavelength.   
     
     
         10 . The method of  claim 9 , further comprising forming a spacer layer on the semiconductor substrate under the ultraviolet superlattice. 
     
     
         11 . The method of  claim 9 , further comprising forming a barrier layer between the ultraviolet superlattice and the light-emitting layer of the first wavelength. 
     
     
         12 . The method of  claim 9 , further comprising forming an electron blocking layer between the light-emitting layer of the second wavelength and the p-type layer. 
     
     
         13 . The method of  claim 9 , wherein forming the p-type layer includes forming a p-type gallium nitride layer. 
     
     
         14 . The method of  claim 9 , wherein forming the light-emitting layer of the first wavelength includes forming a blue quantum well structure. 
     
     
         15 . The method of  claim 9 , wherein forming the light-emitting layer of the second wavelength includes forming a red micro-quantum well structure. 
     
     
         16 . A device, comprising:
 a semiconductor substrate;   a non-light emitting strain management structure on the semiconductor substrate, the non-light emitting strain management structure including components configured to operate at a first wavelength; and   a light emitting structure above the non-light emitting strain management structure, the light emitting structure configured to emit light at a second wavelength that is longer than the first wavelength.   
     
     
         17 . The device of  claim 16 , wherein the first wavelength corresponds to at least one of ultraviolet or blue light and the second wavelength corresponds to at least one of red, orange, yellow, or green light. 
     
     
         18 . The device of  claim 16 , wherein the device is a light emitting diode. 
     
     
         19 . The device of  claim 16 , wherein the non-light emitting strain management structure includes a quantum well structure. 
     
     
         20 . The device of  claim 16 , wherein the light emitting structure includes a red micro-quantum well structure.