Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a substrate, a first device, a second device, a ring structure, a lid structure, and a first adhesive layer. The first device is disposed on the substrate. The second device is adjacent to the first device and is disposed on the substrate. The ring structure is disposed over the substrate and the second device. The ring structure includes a cover and a leg extending out from the cover. The cover has a through opening. The lid structure is disposed over the ring structure and the first device. The lid structure includes a body and a protrusion protruding from the body. The protrusion of the lid structure is inserted into the through opening of the cover of the ring structure. The first adhesive layer is disposed between the body of the lid structure and the cover of the ring structure and includes phase change thermal interface material.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a substrate;   a first device disposed on the substrate;   a second device adjacent to the first device and disposed on the substrate;   a ring structure disposed over the substrate and the second device, wherein the ring structure comprises a cover and a leg extending out from the cover, and the cover has a through opening;   a lid structure disposed over the ring structure and the first device, wherein the lid structure comprises a body and a protrusion protruding from the body, and the protrusion of the lid structure is inserted into the through opening of the cover of the ring structure; and   a first adhesive layer disposed between the body of the lid structure and the cover of the ring structure, wherein the first adhesive layer comprises phase change thermal interface material (PCTIM).   
     
     
         2 . The semiconductor device of  claim 1 , wherein a vertical projection of the through opening onto the substrate is overlapped with a vertical projection of the first device onto the substrate. 
     
     
         3 . The semiconductor device of  claim 1 , further comprising:
 a second adhesive layer disposed between the leg of the ring structure and the substrate;   a third adhesive layer disposed between the cover of the ring structure and the second device; and   a fourth adhesive layer disposed between the protrusion of the lid structure and the first device.   
     
     
         4 . The semiconductor device of  claim 3 , wherein a material of the third adhesive layer is different from a material of the first adhesive layer. 
     
     
         5 . The semiconductor device of  claim 3 , wherein the fourth adhesive layer comprises PCTIM. 
     
     
         6 . The semiconductor device of  claim 3 , wherein the fourth adhesive layer comprises metallic TIM. 
     
     
         7 . The semiconductor device of  claim 3 , wherein the fourth adhesive layer comprises a first material layer and a second material layer adjacent to the first material layer, the first material layer comprises PCTIM and the second material layer comprises metallic TIM. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the body and the protrusion of the lid structure are integrally formed. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the body and the protrusion of the lid structure are spatially separated, and the protrusion is attached to the body through a glue layer. 
     
     
         10 . The semiconductor device of  claim 9 , wherein a material of the body is different from a material of the protrusion. 
     
     
         11 . A semiconductor device, comprising:
 a substrate;   a first device disposed on the substrate;   a second device adjacent to the first device and disposed on the substrate;   a ring structure disposed over the substrate to surround the first device and the second device;   a first lid structure disposed over the ring structure and the second device, wherein the first lid structure has a through opening;   a second lid structure disposed over the first device, wherein the second lid structure is partially located in the through opening of the first lid structure, and a material of the second lid structure is different from a material of the first lid structure; and   a first adhesive layer disposed between the second lid structure and the first device, wherein the first adhesive layer comprises phase change thermal interface material (PCTIM).   
     
     
         12 . The semiconductor device of  claim 11 , wherein a top surface of the first lid structure and a top surface of the second lid structure are located at different level heights. 
     
     
         13 . The semiconductor device of  claim 11 , wherein a thickness of the second lid structure is greater than a thickness of the first lid structure. 
     
     
         14 . The semiconductor device of  claim 11 , further comprising:
 a second adhesive layer disposed between the ring structure and the substrate;   a third adhesive layer disposed between the first lid structure and the second device; and   a fourth adhesive layer disposed between the first lid structure and the ring structure.   
     
     
         15 . The semiconductor device of  claim 14 , wherein the fourth adhesive layer is further disposed between the ring structure and the second lid structure. 
     
     
         16 . The semiconductor device of  claim 14 , wherein a material of the third adhesive layer is different from a material of the first adhesive layer. 
     
     
         17 . The semiconductor device of  claim 11 , wherein the first adhesive layer further comprises metallic TIM. 
     
     
         18 . A manufacturing method of a semiconductor device, comprising:
 providing a substrate;   bonding a first device and a second device to the substrate;   attaching a ring structure to the substrate and the second device, wherein the ring structure comprises a cover and a leg extending out from the cover, and the cover has a through opening exposing the first device;   applying a first adhesive layer on the cover of the ring structure, wherein a material of the first adhesive layer comprises phase change thermal interface material (PCTIM);   providing a lid structure, wherein the lid structure comprises a body and a protrusion protruding from the body; and   inserting the protrusion of the lid structure into the through opening of the cover of the ring structure, so as to attach the lid structure to the ring structure and the first device, wherein the lid structure is attached to the ring structure through the first adhesive layer.   
     
     
         19 . The method of  claim 18 , wherein the leg of the ring structure is attached to the substrate through a second adhesive layer, the cover of the ring structure is attached to the second device through a third adhesive layer, and the protrusion of the lid structure is attached to the first device through a fourth adhesive layer. 
     
     
         20 . The method of  claim 19 , wherein a material of the fourth adhesive layer comprises PCTIM.