Light-emitting device manufacturing method and light-emitting device

Abstract

A method of manufacturing a light-emitting device according to the disclosure includes, in a light-emitting element formation step of forming, on a substrate, a first light-emitting element including a first light-emitting layer, a first light-emitting layer formation step of forming the first light-emitting layer by forming a layered body obtained by layering, in order from the substrate side, a lower reversal resist layer, a light-emitting material layer containing a light-emitting material of the first light-emitting layer, and an upper layer positive resist, and patterning the layered body.

1 . A method of manufacturing a light-emitting device, the manufacturing method comprising:
 light-emitting element formation by forming, on a substrate, a first light-emitting element including a first light-emitting layer,   wherein the light-emitting element formation comprises forming the first light-emitting layer by patterning a first layered body obtained by layering, in order from the substrate side, a first reversal resist, a first light-emitting material layer containing a light-emitting material of the first light-emitting layer, and a first positive resist.   
     
     
         2 . The method of manufacturing a light-emitting device according to  claim 1 ,
 wherein the formation of the first light-emitting layer comprises:   forming a layered body by forming each layer of the first layered body;   exposing the layered body by exposing a portion of the first layered body after the formation of the layered body; and   subsequent to exposure of the layered body, developing by removing the exposed portion of the first layered body through removal of the exposed first reversal resist.   
     
     
         3 . The method of manufacturing a light-emitting device according to  claim 1 ,
 wherein the light-emitting element formation further comprises, after the formation of the first light-emitting layer, first re-insolubilization by solubilizing and insolubilizing the first reversal resist overlapping the first light-emitting layer.   
     
     
         4 . The method of manufacturing a light-emitting device according to  claim 3 ,
 wherein the first re-insolubilization comprises:   exposing the first reversal resist; and   after exposing the first reversal resist, heating the exposed first reversal resist.   
     
     
         5 . The method of manufacturing a light-emitting device according to  claim 3 ,
 wherein in the light-emitting element formation, a second light-emitting element including a second light-emitting layer including a material differing from that of the first light-emitting layer is further formed on the substrate, and   the light-emitting element formation further comprises, after the first re-insolubilization, forming the second light-emitting layer by patterning a second layered body obtained by layering, in order from the substrate side, a second reversal resist, a second light-emitting material layer containing a light-emitting material of the second light-emitting layer, and a second positive resist.   
     
     
         6 . The method of manufacturing a light-emitting device according to  claim 5 ,
 wherein the light-emitting element formation further comprises, after the formation of the second light-emitting layer, second re-insolubilization by solubilizing and insolubilizing the second reversal resist overlapping the second light-emitting layer.   
     
     
         7 . The method of manufacturing a light-emitting device according to  claim 6 ,
 wherein the light-emitting element formation further comprises, after the second re-insolubilization, removing the first positive resist and the second positive resist from an upper layer of the first light-emitting layer and an upper layer of the second light-emitting layer, respectively.   
     
     
         8 . The method of manufacturing a light-emitting device according to  claim 6 ,
 wherein in the light-emitting element formation, a third light-emitting element including a third light-emitting layer including a material differing from those of both the first light-emitting layer and the second light-emitting layer is further formed on the substrate, and   the light-emitting element formation further comprises, after the second re-insolubilization, forming the third light-emitting layer by patterning a third layered body obtained by layering, in order from the substrate side, a third light-emitting material layer containing a light-emitting material of the third light-emitting layer, and a third positive resist.   
     
     
         9 . The method of manufacturing a light-emitting device according to  claim 6 ,
 wherein in the light-emitting element formation, a third light-emitting element containing a third light-emitting layer comprising a material differing from those of both the first light-emitting layer and the second light-emitting layer is further formed, and   the light-emitting element formation further comprises, after the second re-insolubilization, forming the third light-emitting layer by patterning a third layered body obtained by layering, in order from the substrate side, a third reversal resist, a third light-emitting material layer containing a light-emitting material of the third light-emitting layer, and a third positive resist.   
     
     
         10 . (canceled) 
     
     
         11 . (canceled) 
     
     
         12 . The method of manufacturing a light-emitting device according to  claim 6 ,
 wherein in the light-emitting element formation, a third light-emitting element including a third light-emitting layer including a material differing from those of both the first light-emitting layer and the second light-emitting layer is further formed on the substrate, and   the light-emitting element formation further comprises, after the second re-insolubilization, forming the third light-emitting layer by patterning a third layered body obtained by layering, between two layers of a third positive resist, a third light-emitting material layer containing a light-emitting material of the third light-emitting layer.   
     
     
         13 . The method of manufacturing a light-emitting device according to  claim 6 ,
 wherein in the light-emitting element formation, a third light-emitting element including a third light-emitting layer including a material differing from those of both the first light-emitting layer and the second light-emitting layer is further formed on the substrate, and   the light-emitting element formation further comprises forming the third light-emitting layer by patterning a third layered body obtained by layering, between two layers of a negative resist, a third light-emitting material layer containing a light-emitting material of the third light-emitting layer.   
     
     
         14 . The method of manufacturing a light-emitting device according to  claim 1 ,
 wherein the first light-emitting element further comprises a lower layer electrode between the substrate and the first light-emitting layer, and a carrier transport layer between the lower layer electrode and the first light-emitting layer,   the first layered body further comprises, layered between the first reversal resist and the first light-emitting material layer, a carrier transport material layer containing a material of the carrier transport layer, and   in the formation of the first light-emitting layer, the carrier transport material layer is further patterned to form the carrier transport layer.   
     
     
         15 . A light-emitting device comprising:
 a substrate; and   a first light-emitting element on the substrate, the first light-emitting element including a first lower layer electrode, a first light-emitting layer, and a first upper layer electrode layered in this order from the substrate side,   wherein the first light-emitting element further comprises a photosensitive resin layer between the first lower layer electrode and the first light-emitting layer, and   the photosensitive resin layer includes at least one selected from the group consisting of compounds represented by the structural formulas (1) to (3):   
       
         
           
           
               
               
           
         
         wherein, R1 and R2 each independently represent a substituted or unsubstituted hydrocarbon group. 
       
     
     
         16 . The light-emitting device according to  claim 15 ,
 wherein the photosensitive resin layer further comprises at least one selected from the group consisting of aromatic hydrocarbons including a hydroxyl group, 1-hydroxyethyl-2-alkylimidazoline, and shellac.   
     
     
         17 . (canceled) 
     
     
         18 . (canceled) 
     
     
         19 . The light-emitting device according to  claim 15 ,
 wherein the first lower layer electrode is a cathode, and the first upper layer electrode is an anode,   the first light-emitting element further comprises an electron transport layer between the first lower layer electrode and the photosensitive resin layer, and   an electron affinity of the photosensitive resin layer is smaller than an electron affinity of the electron transport layer, and is smaller than an electron affinity of the first light-emitting layer.   
     
     
         20 . The light-emitting device according to  claim 15 ,
 wherein the first lower layer electrode is a cathode, and the first upper layer electrode is an anode,   the first light-emitting element further comprises an electron transport layer between the first lower layer electrode and the photosensitive resin layer, and   an electron affinity of the photosensitive resin layer is smaller than an electron affinity of the electron transport layer, and is greater than an electron affinity of the first light-emitting layer.   
     
     
         21 . The light-emitting device according to  claim 15 ,
 wherein the first lower layer electrode is an anode, and the first upper layer electrode is a cathode,   the first light-emitting element further comprises a hole transport layer between the first lower layer electrode and the photosensitive resin layer, and   an ionization energy of the photosensitive resin layer is greater than an ionization energy of the hole transport layer, and is greater than an ionization energy of the first light-emitting layer.   
     
     
         22 . The light-emitting device according to  claim 15 ,
 wherein the first lower layer electrode is an anode, and the first upper layer electrode is a cathode,   the first light-emitting element further comprises a hole transport layer between the first lower layer electrode and the photosensitive resin layer, and   an ionization energy of the photosensitive resin layer is greater than an ionization energy of the hole transport layer, and is smaller than an ionization energy of the first light-emitting layer.   
     
     
         23 . The light-emitting device according to  claim 15 ,
 wherein only the first light-emitting element comprises the photosensitive resin layer.   
     
     
         24 . The light-emitting device according to  claim 15 ,
 further comprising a second light-emitting element on the substrate, the second light-emitting element including a second lower layer electrode, a second light-emitting layer including a material differing from that of the first light-emitting layer, and a second upper layer electrode layered in this order from the substrate side,   wherein the second light-emitting element further comprises the photosensitive resin layer between the second lower layer electrode and the second light-emitting layer.   
     
     
         25 - 28 . (canceled)