Semiconductor etching solution

Abstract

Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.

What is claimed is: 
     
         1 . A semiconductor etching solution comprising:
 a fluoride ion source;   a carboxylic acid;   a percarboxylic acid;   hydrogen peroxide; and   bromide ions,   wherein a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.   
     
     
         2 . A semiconductor etching solution comprising:
 a fluoride ion source;   a carboxylic acid;   a percarboxylic acid;   hydrogen peroxide;   at least one compound selected from the group consisting of N-(3-aminopropyl)diethanolamine, 3-morpholino-1,2-propanediol, and diisopropanolamine;   at least one compound selected from the group consisting of naphthalene sulfonic acid formalin condensate, methanesulfonic acid, C12 to C14 alkyldiphenyl ether disulfonic acid, and triisopropylnaphthalene sulfonic acid; and   bromide ions,   wherein a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.   
     
     
         3 . The semiconductor etching solution according to  claim 1 , wherein the content of the bromide ions is 5 mass ppt or more with respect to the total mass of the semiconductor etching solution. 
     
     
         4 . The semiconductor etching solution according to  claim 1 , wherein a mass ratio of a content of the carboxylic acid to the content of the bromide ions is 1.0×10 10  or more. 
     
     
         5 . A semiconductor etching solution comprising:
 a fluoride ion source;   a carboxylic acid;   a percarboxylic acid; and   hydrogen peroxide,   wherein a content of the carboxylic acid, a content of the percarboxylic acid, and a content of the hydrogen peroxide are 55.0 to 94.0% by mass, 5.0 to 25.0% by mass, and 1.0 to 20.0% by mass, respectively, with respect to a total mass of the carboxylic acid, the percarboxylic acid, and the hydrogen peroxide.   
     
     
         6 . A semiconductor etching solution comprising:
 a fluoride ion source;   a carboxylic acid;   a percarboxylic acid; and   hydrogen peroxide,   at least one compound selected from the group consisting of N-(3-aminopropyl)diethanolamine, 3-morpholino-1,2-propanediol, and diisopropanolamine;   at least one compound selected from the group consisting of naphthalene sulfonic acid formalin condensate, methanesulfonic acid, C12 to C14 alkyldiphenyl ether disulfonic acid, and triisopropylnaphthalene sulfonic acid; and   wherein a content of the carboxylic acid, a content of the percarboxylic acid, and a content of the hydrogen peroxide are 55.0 to 94.0% by mass, 5.0 to 25.0% by mass, and 1.0 to 20.0% by mass, respectively, with respect to a total mass of the carboxylic acid, the percarboxylic acid, and the hydrogen peroxide.   
     
     
         7 . The semiconductor etching solution according to  claim 1 , wherein the carboxylic acid is acetic acid, and the percarboxylic acid is peracetic acid. 
     
     
         8 . The semiconductor etching solution according to  claim 1 , wherein the fluoride ion source is hydrogen fluoride. 
     
     
         9 . The semiconductor etching solution according to  claim 1 , further comprising bromate ions,
 wherein a content of the bromate ions is 1 to 100 mass ppm with respect to the total mass of the semiconductor etching solution.   
     
     
         10 . The semiconductor etching solution according to  claim 1 , wherein an alcohol-based solvent is not contained. 
     
     
         11 . The semiconductor etching solution according to  claim 1 , further comprising sulfuric acid. 
     
     
         12 . The semiconductor etching solution according to  claim 1 , further comprising an organic compound having a sulfonic acid group. 
     
     
         13 . The semiconductor etching solution according to  claim 12 , wherein the organic compound having a sulfonic acid group is a polymer having a repeating unit having a sulfonic acid group. 
     
     
         14 . The semiconductor etching solution according to  claim 1 , further comprising an amine. 
     
     
         15 . The semiconductor etching solution according to  claim 1 , further comprising
 a metallic impurity component including one or more elements selected from the group consisting of Mn, Ni, V, Co, Fe, and Cr,   wherein a content of each of the elements included in the metallic impurity component is less than 1.0 mass ppb with respect to the total mass of the semiconductor etching solution.   
     
     
         16 . The semiconductor etching solution according to  claim 1 , wherein a mass ratio of a content of the percarboxylic acid to a total content of the elements included in the metallic impurity component is 2.0×10 9  or more. 
     
     
         17 . The semiconductor etching solution according to  claim 1 , wherein a mass ratio of a content of the fluoride ion source to a total content of the elements included in the metallic impurity component is 2.0×10 7  or more. 
     
     
         18 . A process for manufacturing a semiconductor device, using the semiconductor etching solution according to  claim 1 . 
     
     
         19 . A semiconductor device manufactured by the process for manufacturing a semiconductor device according to  claim 18 .