Detection device

Abstract

According to an aspect, a detection device includes: a substrate; a photodiode in which a lower electrode, a semiconductor layer, and an upper electrode are stacked on the substrate in the order as listed; a transistor provided in the photodiode; an insulating layer provided between layers of the substrate and the photodiode; and a planarizing layer covering the insulating layer. The insulating layer comprises a projecting portion that projects toward the photodiode in a direction orthogonal to the substrate. The planarizing layer has a contact hole provided in a position that is below the photodiode and overlaps the projecting portion of the insulating layer. The photodiode is provided on an upper side of the planarizing layer and is also provided so as to cover the contact hole. The lower electrode of the photodiode is electrically coupled to the transistor at a bottom of the contact hole.

What is claimed is: 
     
         1 . A detection device comprising:
 a substrate;   a photodiode in which a lower electrode, a semiconductor layer, and an upper electrode are stacked on the substrate in the order as listed;   a transistor provided in the photodiode;   an insulating layer provided between layers of the substrate and the photodiode; and   a planarizing layer covering the insulating layer, wherein   the insulating layer comprises a projecting portion that projects toward the photodiode in a direction orthogonal to the substrate,   the planarizing layer has a contact hole provided in a position that is below the photodiode and overlaps the projecting portion of the insulating layer,   the photodiode is provided on an upper side of the planarizing layer and is also provided so as to cover the contact hole, and   the lower electrode of the photodiode is electrically coupled to the transistor at a bottom of the contact hole.   
     
     
         2 . The detection device according to  claim 1 , comprising:
 a plurality of the insulating layers; and   an overlapping conductive layer provided between the insulating layers and overlapping the contact hole of the planarizing layer in plan view, wherein   the projecting portion is formed at a portion of at least one of the insulating layers that overlaps the overlapping conductive layer.   
     
     
         3 . The detection device according to  claim 2 , further comprising a signal line and a gate line each electrically coupled to the transistor, wherein
 the overlapping conductive layer is provided in the same layer as that of the signal line.   
     
     
         4 . The detection device according to  claim 2 , further comprising a signal line and a gate line each electrically coupled to the transistor, wherein
 the overlapping conductive layer is provided in the same layer as that of the gate line.   
     
     
         5 . The detection device according to  claim 2 , further comprising coupling wiring provided between the planarizing layer and the insulating layers and electrically coupled to the transistor, wherein
 the overlapping conductive layer is electrically coupled to the coupling wiring in an area overlapping the photodiode.   
     
     
         6 . The detection device according to  claim 1 , further comprising a recessed portion provided in an area of the insulating layer overlapping the photodiode so as to surround the contact hole, wherein
 the projecting portion is formed at a portion of the insulating layer surrounded by the recessed portion, and   the planarizing layer is provided so as to cover the recessed portion.   
     
     
         7 . The detection device according to  claim 6 , comprising a plurality of the insulating layers, wherein
 the recessed portion is formed so as to penetrate the insulating layers in a thickness direction, and   side surfaces of the insulating layers that form an inner wall of the recessed portion are provided in a step-like pattern.   
     
     
         8 . The detection device according to  claim 1 , wherein a width of the projecting portion in a first direction parallel to the substrate is larger than a width of the bottom of the contact hole in the first direction. 
     
     
         9 . The detection device according to  claim 1 , wherein a width of the bottom of the contact hole in a first direction parallel to the substrate is larger than a width of an inclined surface of the contact hole in the first direction.