US2024114773A1PendingUtilityA1
Spiro-ometad comprising compositions, devices comprising the same and methods of making the same
Est. expiryAug 23, 2042(~16.1 yrs left)· nominal 20-yr term from priority
Inventors:Juan-Pablo Correa-BaenaMark D. LosegoAndres-Felipe Castro-MendezSelma FairachEmily K. McguinnessCarlo PeriniJamie P. Wooding
H10K 85/626H10K 30/151H10K 85/50H10K 85/633H10K 30/40H10K 30/84H10K 85/624Y02E10/549
47
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Claims
Abstract
The present disclosure provides for a composition comprising a compound configured to form internal π bonds, and an inorganic material, wherein the composition is defined by a first surface opposing a second surface and a first thickness measured from the first surface to the second surface of the composition, and a method of making thereof. Further provided herein is a device comprising at least one of the compositions disclosed herein. Also disclosed herein is a photovoltaic device.
Claims
exact text as granted — not AI-modified1 . A composition comprising a compound configured to form internal π bonds, and an inorganic material, wherein the composition is defined by a first surface opposing a second surface and a first thickness measured from the first surface to the second surface of the composition.
2 . The composition of claim 1 , wherein the internal π bonds comprise π-π stacking.
3 . The composition of claim 1 , wherein the compound is a charge transport material.
4 . The composition of claim 1 , wherein the compound comprises an organic triphenylamine-based molecule.
5 . The composition of claim 4 , wherein the organic triphenylamine-based molecule comprises Spiro-OMeTAD.
6 . The composition of claim 1 , wherein the inorganic material is at least partially insulating.
7 . The composition of claim 1 , wherein the inorganic material comprises a metal oxide, a metalloid oxide, a metal hydroxide, a metal oxyhydroxide, a ceramic material, or any combination thereof.
8 . The composition of claim 1 , wherein a first portion of the inorganic material is dispersed within the first surface and within at least a portion of the first thickness of the composition.
9 . The composition of claim 8 , wherein the first portion of the inorganic material is disposed within a second thickness measured from the first surface, wherein the second thickness is smaller than the first thickness.
10 . The composition of claim 9 , wherein the second thickness is from about 20 nm to about 60 nm.
11 . The composition of claim 1 , wherein a second portion of the inorganic material is disposed on the first surface.
12 . The composition of claim 1 , wherein at least a portion of the inorganic material is present as one or more clusters.
13 . The composition of claim 1 , wherein the inorganic material comprises one or more of Al y O x , SiO x , HfO x , ZrO x , Ta y O x , Y y O x , Ir y O x , RuO x , WO x , Ni y O x , TiO x , InO x , NiO x , ZnO x , CuO x , V y O z , Al y O x H z , SiO x H z , HfO x H z , ZrO x H z , Ta y O x H z , Y y O x H z , Ir y O x H z , RuO x H z , WO x H z , Ni y O x H z , TiO x H z , InO x H z , NiO x H z , ZnO x H z , CuO x H z , V y O z H z , or a combination thereof.
14 . The composition of claim 1 , wherein the composition is substantially stable and does not degrade at a temperature from room temperature to 85° C.
15 . The composition of claim 1 , wherein the composition is substantially free of crystalline phase at a temperature of 60° C. to 85° C.
16 . The composition of claim 1 , wherein the inorganic material is a nanosheet, a nanoparticle, a nanowire, or any combination thereof.
17 . The composition of claim 1 , wherein the compound comprises Spiro-OMeTAD and the inorganic material comprises TiO 2 .
18 . The composition of claim 2 , wherein at least a portion of the π-π stacking is disrupted.
19 . The composition of claim 1 , wherein the composition is formed by a vapor phase infiltration (VPI).
20 . A device comprising at least one composition of claim 1 .
21 . The device of claim 20 , wherein the device is a photovoltaic cell.
22 . A photovoltaic device comprising:
a perovskite material layer; and a layer comprising a composition comprising a compound and an inorganic material, wherein the layer is defined by a first surface opposing a second surface and a first thickness measured from the first surface to the second surface; wherein the second surface overlays the perovskite material layer, wherein the compound comprises a Spiro-OMeTAD.
23 . A method of making the composition of claim 1 , the method comprises:
exposing a layer of the compound to a vapor phase comprising a first precursor for a first predetermined time, thereby at least partially adsorbing at least a portion of the first precursor on a surface of the layer and/or at least partially infiltrating the layer of the compound with at least a portion of the first precursor to form a modified compound; and exposing the modified compound to a second precursor for a second predetermined time, thereby reacting the first precursor with the second precursor to form the inorganic material, thereby forming the composition comprising a first portion of the inorganic material dispersed within the layer of the compound and a second portion of the inorganic material at least partially disposed on the surface of the layer.
24 . The method of claim 23 , wherein the first precursor comprises a metal salt, metal-organic, organometallic, or any combination thereof.
25 . The method of claim 23 , wherein the second precursor is a water vapor, oxygen gas, ozone, hydrogen peroxide, or any combination thereof.
26 . (canceled)Join the waitlist — get patent alerts
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