Optical Annealing Apparatus And Method For Forming Semiconductor Structure

Abstract

The present disclosure provides an optical annealing apparatus and a method for forming a semiconductor structure. The optical annealing apparatus includes: a platform for carrying a wafer; a light source for emitting an annealing light to the wafer; and a mask layer disposed between the platform and the light source, wherein the mask layer has a pattern opening for allowing the annealing light to pass through, and the annealing light passing through the pattern opening is used for annealing a partial area of the wafer. The optical annealing apparatus and the method for forming the semiconductor structure can simplify the formation process of an ion doped region and reduces costs.

1 . An optical annealing apparatus, comprising:
 a platform for carrying a wafer;   a light source for emitting an annealing light to the wafer; and   a mask layer disposed between the platform and the light source, wherein the mask layer has a pattern opening for allowing the annealing light to pass through, and the annealing light passing through the pattern opening is used for annealing a partial area of the wafer.   
     
     
         2 . The optical annealing apparatus according to  claim 1 , wherein the annealing light emitted by the light source comprises laser. 
     
     
         3 . The optical annealing apparatus according to  claim 2 , wherein the laser has a wavelength ranging from 300 microns to 600 microns. 
     
     
         4 . The optical annealing apparatus according to  claim 1 , wherein the mask layer comprises a mask substrate and a plurality of mask pattern structures disposed on the mask substrate, and the pattern opening is formed between the plurality of mask pattern structures, wherein the mask substrate is made of a light transmitting material, and the plurality of mask pattern structures are made of an opaque material. 
     
     
         5 . The optical annealing apparatus according to  claim 4 , wherein the mask substrate is made of quartz. 
     
     
         6 . The optical annealing apparatus according to  claim 4 , wherein the plurality of mask pattern structures are made of one or more selected from a group consisting of chromium, molybdenum, selenium, silicon, aluminum and copper. 
     
     
         7 . The optical annealing apparatus according to  claim 1 , further comprising an optical system for adjusting and controlling parameters of the light source. 
     
     
         8 . The optical annealing apparatus according to  claim 1 , further comprising a transporting system for transporting the wafer to the platform or transporting the wafer from the platform. 
     
     
         9 . The optical annealing apparatus according to  claim 1 , further comprising a mask carrying component for adjusting a relative position between the mask layer and the wafer. 
     
     
         10 . A method for forming a semiconductor structure, comprising:
 providing an optical annealing apparatus, wherein the optical annealing apparatus comprises: a platform for carrying a wafer; a light source for emitting an annealing light to the wafer; and a mask layer disposed between the platform and the light source, wherein the mask layer has a pattern opening for allowing the annealing light to pass through, and the annealing light passing through the pattern opening is used for annealing a partial area of the wafer;   providing the wafer;   placing the wafer on the platform;   performing an ion implantation on the wafer to form an initial ion implantation region in the wafer; and   annealing a portion of the initial ion implantation region to form an ion doped region in the portion of the initial ion implantation region by the optical annealing apparatus.   
     
     
         11 . The method according to  claim 10 , wherein the wafer has a thickness ranging from 50 microns to 200 microns. 
     
     
         12 . The method according to  claim 10 , wherein the pattern opening has a pattern corresponding to a pattern of the ion doped region. 
     
     
         13 . The method according to  claim 10 , wherein the wafer has a first surface and a second surface opposite to each other, the first surface has a first device region, and the second surface faces the light source.