Semiconductor apparatus and manufacturing method of semiconductor apparatus

Abstract

A manufacturing method of a semiconductor apparatus according to an embodiment includes forming an electrode on a first main surface of a semiconductor substrate made from a compound semiconductor; forming, at a location where the electrode is formed, a via hole that penetrates the first main surface and a second main surface of the semiconductor substrate, wherein a ratio of a thickness of the semiconductor substrate to a maximum value of a width of an opening in the second main surface is greater than 1; forming a rear-side electrode on a second main surface of the semiconductor substrate in such a manner that the rear-side electrode is electrically coupled to the electrode in the via hole; forming an insulating layer arranged at least a layer above the opening; and forming a solder layer in a layer above the rear-side electrode and the insulating layer.

What is claimed is: 
     
         1 . A manufacturing method of a semiconductor apparatus, comprising:
 forming an electrode on a first main surface of a semiconductor substrate made from a compound semiconductor;   forming, at a location where the electrode is formed, a via hole that penetrates the first main surface and a second main surface of the semiconductor substrate, wherein a ratio of a thickness of the semiconductor substrate to a maximum value of a width of an opening in the second main surface is greater than 1;   forming a rear-side electrode on a second main surface of the semiconductor substrate in such a manner that the rear-side electrode is electrically coupled to the electrode in the via hole;   forming an insulating layer arranged at least a layer above the opening; and   forming a solder layer in a layer above the rear-side electrode and the insulating layer.   
     
     
         2 . The manufacturing method of a semiconductor apparatus according to  claim 1 , wherein
 the forming the insulating layer includes:   forming an insulating film on the rear-side electrode and performing anisotropic etching on the insulating film in a thickness direction of the semiconductor substrate.   
     
     
         3 . The manufacturing method of a semiconductor apparatus according to  claim 1 , wherein
 the forming the insulating layer includes:   forming an insulating film on the rear-side electrode and polishing the insulating film arranged on a layer above the second main surface of the semiconductor substrate.   
     
     
         4 . The manufacturing method of a semiconductor apparatus according to  claim 1 , wherein
 the forming the insulating layer includes:   forming an insulating film on the rear-side electrode, forming a resist pattern that covers a part of the insulating film formed in the via hole and in the vicinity of the opening, removing the insulating film exposed from the resist pattern by etching, and removing the resist pattern.   
     
     
         5 . A semiconductor apparatus further comprising:
 a semiconductor substrate having a via hole penetrating a first main surface and a second main surface;   an electrode arranged above a via hole on the first main surface of the semiconductor substrate;   a rear-side electrode arranged on the second main surface of the semiconductor substrate and electrically coupled to the electrode in the via hole; and   an insulating layer arranged on the rear-side electrode in at least part of the via hole, wherein   a ratio of a thickness of the semiconductor substrate to a maximum value of a width of an opening of the via hole is greater than 1.   
     
     
         6 . The semiconductor apparatus according to  claim 5 , further comprising:
 a solder layer arranged on the rear-side electrode and the insulating layer; and   a void surrounded at least by the solder layer and the insulating layer in the via hole.