Display device

Abstract

A display device according to an embodiment includes: a display area and a component area at least partly surrounded by the display area; a light-emitting device disposed on a substrate in the display area and including a first electrode, an emission layer, and a second electrode; a capping layer disposed on the light-emitting device; a first low reflection layer overlapping the display area in a plan view and a second low reflection layer overlapping the component area in a plan view, the first and second low reflection layers disposed on the capping layer; an encapsulation layer disposed on the first low reflection layer; and a reflection adjusting layer disposed on the encapsulation layer, wherein the second low reflection layer includes an inorganic oxide.

What is claimed is: 
     
         1 . A display device comprising:
 a display area and a component area at least partly surrounded by the display area;   a light-emitting device disposed on a substrate in the display area and including:
 a first electrode; 
 an emission layer; and 
 a second electrode; 
   a capping layer disposed on the light-emitting device;   a first low reflection layer overlapping the display area in a plan view and a second low reflection layer overlapping the component area in a plan view, the first and second low reflection layers disposed on the capping layer;   an encapsulation layer disposed on the first low reflection layer; and   a reflection adjusting layer disposed on the encapsulation layer,   wherein the second low reflection layer includes an inorganic oxide.   
     
     
         2 . The display device of  claim 1 , wherein
 the first low reflection layer includes an inorganic material, and   an absorption coefficient k of the inorganic oxide is less than a corresponding absorption coefficient k of the inorganic material.   
     
     
         3 . The display device of  claim 1 , wherein
 an absorption coefficient k of the inorganic oxide is equal to or less than about 0.5.   
     
     
         4 . The display device of  claim 1 , wherein
 the second low reflection layer includes a metal oxide.   
     
     
         5 . The display device of  claim 1 , wherein
 the first low reflection layer includes an inorganic material, and   the inorganic material is bismuth (Bi), ytterbium (Yb), cobalt (Co), molybdenum (Mo), tin (Sn), titanium (Ti), zirconium (Zr), aluminum (Al), chromium (Cr), niobium (Nb), platinum (Pt), tungsten (W), indium (In), tin (Sn), iron (Fe), nickel (Ni), tantalum (Ta), manganese (Mn), zinc (Zn), germanium (Ge), silver (Ag), magnesium (Mg), gold (Au), copper (Cu), calcium (Ca), or a combination thereof.   
     
     
         6 . The display device of  claim 1 , wherein
 the inorganic oxide is Bi 2 O 3 , MoO 2 , MoO 3 , Ta 2 O 5 , NbO 2 , SnO 2 , ZrO 2 , HfO 2 , F 2 O 3 , ZnO, ITO, CdO, SiO 2 , TiO 2 , Al 2 O 3 , Y 2 O 3 , BeO, MgO, PbO 2 , WO 3 , SiNx, LiF, CaF 2 , MgF 2 , CdS, or a combination thereof.   
     
     
         7 . The display device of  claim 1 , wherein
 the second low reflection layer is formed based on an oxidation treatment according to at least one of irradiation of laser beams, gas doping, and a plasma process.   
     
     
         8 . The display device of  claim 1 , further comprising:
 a light blocking layer disposed between the encapsulation layer and the reflection adjusting layer, and having an opening overlapping the emission layer in a plan view.   
     
     
         9 . The display device of  claim 1 , wherein the display device includes:
 a first conductive layer disposed on the encapsulation layer;   a first touch insulating layer disposed on the first conductive layer;   a second conductive layer disposed on the first touch insulating layer; and   a second touch insulating layer disposed on the second conductive layer.   
     
     
         10 . The display device of  claim 1 , further comprising:
 an optical element overlapping the component area in a plan view,   wherein the optical element is disposed on a rear side of the substrate.   
     
     
         11 . The display device of  claim 1 , wherein
 a thickness of the second low reflection layer is about 1 nm to about 100 nm.   
     
     
         12 . A display device comprising:
 a housing;   a cover window disposed on an upper portion of the housing;   a display panel disposed on a lower portion of the cover window and including a display area and a component area surrounded by the display area; and   an optical element disposed on a rear side of the display panel and overlapping the component area in a plan view,   wherein the display panel includes:   a light-emitting device overlapping the display area in a plan view and including a first electrode, an emission layer, and a second electrode,   a capping layer disposed on the light-emitting device,   a first low reflection layer overlapping the display area in a plan view and a second low reflection layer overlapping the component area in a plan view, the first and second low reflection layers disposed on the capping layer,   an encapsulation layer disposed on the first low reflection layer, and   a reflection adjusting layer disposed on the encapsulation layer, and   wherein the second low reflection layer includes an inorganic oxide.   
     
     
         13 . The display device of  claim 12 , wherein
 the first low reflection layer includes an inorganic material, and   an absorption coefficient k of the inorganic oxide is less than a corresponding absorption coefficient k of the inorganic material.   
     
     
         14 . The display device of  claim 12 , wherein
 an absorption coefficient k of the inorganic oxide is equal to or less than about 0.5.   
     
     
         15 . The display device of  claim 12 , wherein
 the second low reflection layer includes a metal oxide.   
     
     
         16 . The display device of  claim 12 , wherein
 the first low reflection layer includes an inorganic material, and   the inorganic material is bismuth (Bi), ytterbium (Yb), cobalt (Co), molybdenum (Mo), tin (Sn), titanium (Ti), zirconium (Zr), aluminum (Al), chromium (Cr), niobium (Nb), platinum (Pt), tungsten (W), indium (In), tin (Sn), iron (Fe), nickel (Ni), tantalum (Ta), manganese (Mn), zinc (Zn), germanium (Ge), silver (Ag), magnesium (Mg), gold (Au), copper (Cu), calcium (Ca), or a combination thereof.   
     
     
         17 . The display device of  claim 12 , wherein
 the inorganic oxide is Bi 2 O 3 , MoO 2 , MoO 3 , Ta 2 O 5 , NbO 2 , SnO 2 , ZrO 2 , HfO 2 , F 2 O 3 , ZnO, ITO, CdO, SiO 2 , TiO 2 , Al 2 O 3 , Y 2 O 3 , BeO, MgO, PbO 2 , WO 3 , SiNx, LiF, CaF 2 , MgF 2 , CdS, or a combination thereof.   
     
     
         18 . The display device of  claim 12 , wherein
 the second low reflection layer is formed based on an oxidation treatment according to at least one of irradiation of laser beams, gas doping, and a plasma process.   
     
     
         19 . The display device of  claim 12 , further comprising:
 a light blocking layer disposed between the encapsulation layer and the reflection adjusting layer, and having an opening overlapping the emission layer in a plan view.   
     
     
         20 . The display device of  claim 12 , wherein
 a thickness of the second low reflection layer is about 1 nm to about 100 nm.