Display apparatus and method of manufacturing the same

Abstract

A display apparatus includes a substrate including a component area including a transmission area, a main area outside the component area, and a bending area bent based on a bending axis, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer, and a first gate insulating layer overlapping the first semiconductor layer and including a 1-1 st opening corresponding to the bending area, and a 1-1 st through-hole exposing a portion of the first semiconductor layer. A first acute angle formed by an inner surface of the 1-1 st opening with respect to an upper surface of the substrate is less than a first contact acute angle formed by an inner surface of the 1-1 st through-hole with respect to the upper surface of the substrate.

What is claimed is: 
     
         1 . A display apparatus comprising:
 a substrate including:
 a component area including a transmission area; 
 a main area outside the component area; and 
 a bending area bent based on a bending axis; 
   a buffer layer disposed on the substrate;   a first semiconductor layer disposed on the buffer layer; and   a first gate insulating layer overlapping the first semiconductor layer and including:
 a 1-1 st  opening corresponding to the bending area; and 
 a 1-1 st  through-hole exposing a portion of the first semiconductor layer, 
   wherein   a first acute angle formed by an inner surface of the 1-1 st  opening with respect to an upper surface of the substrate is less than a first contact acute angle formed by an inner surface of the 1-1 st  through-hole with respect to the upper surface of the substrate.   
     
     
         2 . The display apparatus of  claim 1 , further comprising:
 a plurality of auxiliary pixels arranged in the component area,   wherein the first gate insulating layer further includes a 2-1 st  opening corresponding to the transmission area disposed between the plurality of auxiliary pixels.   
     
     
         3 . The display apparatus of  claim 2 , wherein a second acute angle formed by an inner surface of the 2-1 st  opening with respect to the upper surface of the substrate is the same as the first acute angle. 
     
     
         4 . The display apparatus of  claim 1 , further comprising:
 a second gate insulating layer disposed on the first gate insulating layer;   a second semiconductor layer disposed on the second gate insulating layer; and   a third gate insulating layer overlapping the second semiconductor layer.   
     
     
         5 . The display apparatus of  claim 4 , wherein
 the second gate insulating layer includes a 1-2 nd  through-hole corresponding to the 1-1 st  through-hole, and   an inner surface of the 1-2 nd  through-hole and the inner surface of the 1-1 st  through-hole form a continuous surface with each other.   
     
     
         6 . The display apparatus of  claim 5 , wherein the third gate insulating layer includes a 2-1 st  through-hole exposing a portion of the second semiconductor layer and includes a second contact acute angle formed by an inner surface of the 2-1 st  through-hole with respect to the upper surface of the substrate. 
     
     
         7 . The display apparatus of  claim 6 , wherein
 the buffer layer includes a 3-1 st  opening corresponding to the bending area, and   a third acute angle formed by an inner surface of the 3-1 st  opening with respect to the upper surface of the substrate is less than the first acute angle.   
     
     
         8 . The display apparatus of  claim 7 , wherein the third acute angle is less than the second contact acute angle. 
     
     
         9 . The display apparatus of  claim 7 , wherein, when viewed in a direction perpendicular to the substrate, an area of the 1-1 st  opening is greater than an area of the 3-1 st  opening. 
     
     
         10 . The display apparatus of  claim 7 , wherein, when viewed in a direction perpendicular to the substrate, the 3-1 st  opening is disposed in the 1-1 st  opening. 
     
     
         11 . The display apparatus of  claim 10 , wherein the substrate further includes a groove corresponding to the 3-1 st  opening. 
     
     
         12 . The display apparatus of  claim 11 , wherein a fourth acute angle formed by an inner surface of the groove with respect to the upper surface of the substrate is the same as or less than the third acute angle. 
     
     
         13 . The display apparatus of  claim 11 , wherein an inner surface of the groove and the inner surface of the 3-1 st  opening form a continuous surface with each other. 
     
     
         14 . The display apparatus of  claim 4 , further comprising:
 an organic interlayer insulating layer disposed on the third gate insulating layer; and   an organic material layer filling the 1-1 st  opening and including a same material as the organic interlayer insulating layer.   
     
     
         15 . A method of manufacturing a display apparatus, the method comprising:
 preparing a substrate including a component area including a transmission area, a main area outside the component area, and a bending area bent based on a bending axis;   forming a buffer layer on the substrate;   forming a first semiconductor layer on the buffer layer;   forming a first gate insulating layer overlapping the first semiconductor layer; and   simultaneously forming, in the first gate insulating layer, a 1-1 st  opening corresponding to the bending area and including a first acute angle formed by an inner surface of the 1-1 st  opening with respect to an upper surface of the substrate with a 2-1 st  opening corresponding to the transmission area and including a second acute angle formed by an inner surface of the 2-1 st  opening with respect to the upper surface of the substrate.   
     
     
         16 . The method of  claim 15 , further comprising:
 forming, in the first gate insulating layer, a 1-1 st  through-hole exposing a portion of the first semiconductor layer and including a first contact acute angle formed by an inner surface of the 1-1 st  through-hole with respect to the upper surface of the substrate,   wherein the first contact acute angle is greater than the first acute angle.   
     
     
         17 . The method of  claim 15 , further comprising:
 forming a second gate insulating layer on the first gate insulating layer;   forming a second semiconductor layer on the second gate insulating layer; and   forming a third gate insulating layer overlapping the second semiconductor layer.   
     
     
         18 . The method of  claim 17 , further comprising:
 forming, in the third gate insulating layer, a 2-1 st  through-hole exposing a portion of the second semiconductor layer and including a second contact acute angle with respect to the upper surface of the substrate.   
     
     
         19 . The method of  claim 18 , wherein the forming of the 2-1 st  through-hole in the third gate insulating layer comprises forming, in the third gate insulating layer, simultaneously with the 2-1 st  through-hole, a 3-1 st  opening corresponding to the bending area and including a third acute angle formed by an inner surface of the 3-1 st  opening with respect to the upper surface of the substrate. 
     
     
         20 . The method of  claim 19 , wherein, when viewed in a direction perpendicular to the substrate, an area of the 1-1 st  opening is greater than an area of the 3-1 st  opening.