US2024047624A1PendingUtilityA1

Electronic device

Assignee: INNOLUX CORPPriority: Jul 18, 2019Filed: Oct 16, 2023Published: Feb 8, 2024
Est. expiryJul 18, 2039(~13 yrs left)· nominal 20-yr term from priority
H10W 90/00H10F 39/103H10H 29/30H10K 59/12H10K 59/65H10K 59/60G06V 40/13H10H 20/8506H01L 33/483G06F 21/32G06V 40/1318
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Claims

Abstract

An electronic device includes a substrate, a diode disposed on the substrate, and an optical sensor unit. The optical sensor unit partially overlaps the diode in a thickness direction of the substrate. The optical sensor unit comprises a first region not overlapping the diode and a second region overlapping the diode, and an area of the first region is greater than an area of the second region.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An electronic device comprising:
 a substrate;   a diode disposed on the substrate; and   an optical sensor unit, wherein the optical sensor unit partially overlaps the diode in a thickness direction of the substrate,   wherein the optical sensor unit comprises a first region not overlapping the diode and a second region overlapping the diode, and an area of the first region is greater than an area of the second region.   
     
     
         2 . The electronic device of  claim 1 , wherein the diode is configured to emit a light, and the first region is configured to receive the light to generate a first electrical signal for fingerprint authentication. 
     
     
         3 . The electronic device of  claim 1 , further comprising a circuit layer disposed on the substrate, wherein the circuit layer comprises a switch element and a driving element, wherein a gate electrode of the driving element is electrically connected to a drain electrode of the switch element, and a drain electrode of the driving element is electrically connected to the diode. 
     
     
         4 . The electronic device of  claim 3 , wherein the switch element comprises a first semiconductor layer, the driving element comprises a second semiconductor layer, wherein a material of one of the first semiconductor layer and the second semiconductor layer includes poly-crystalline silicon, and a material of another one of the first semiconductor layer and the second semiconductor layer includes indium gallium zinc oxide. 
     
     
         5 . The electronic device of  claim 1 , wherein the optical sensor unit is disposed between the substrate and the diode. 
     
     
         6 . The electronic device of  claim 1 , wherein the diode is an organic light emitting diode.

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