US2024047624A1PendingUtilityA1
Electronic device
Est. expiryJul 18, 2039(~13 yrs left)· nominal 20-yr term from priority
H10W 90/00H10F 39/103H10H 29/30H10K 59/12H10K 59/65H10K 59/60G06V 40/13H10H 20/8506H01L 33/483G06F 21/32G06V 40/1318
76
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Claims
Abstract
An electronic device includes a substrate, a diode disposed on the substrate, and an optical sensor unit. The optical sensor unit partially overlaps the diode in a thickness direction of the substrate. The optical sensor unit comprises a first region not overlapping the diode and a second region overlapping the diode, and an area of the first region is greater than an area of the second region.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An electronic device comprising:
a substrate; a diode disposed on the substrate; and an optical sensor unit, wherein the optical sensor unit partially overlaps the diode in a thickness direction of the substrate, wherein the optical sensor unit comprises a first region not overlapping the diode and a second region overlapping the diode, and an area of the first region is greater than an area of the second region.
2 . The electronic device of claim 1 , wherein the diode is configured to emit a light, and the first region is configured to receive the light to generate a first electrical signal for fingerprint authentication.
3 . The electronic device of claim 1 , further comprising a circuit layer disposed on the substrate, wherein the circuit layer comprises a switch element and a driving element, wherein a gate electrode of the driving element is electrically connected to a drain electrode of the switch element, and a drain electrode of the driving element is electrically connected to the diode.
4 . The electronic device of claim 3 , wherein the switch element comprises a first semiconductor layer, the driving element comprises a second semiconductor layer, wherein a material of one of the first semiconductor layer and the second semiconductor layer includes poly-crystalline silicon, and a material of another one of the first semiconductor layer and the second semiconductor layer includes indium gallium zinc oxide.
5 . The electronic device of claim 1 , wherein the optical sensor unit is disposed between the substrate and the diode.
6 . The electronic device of claim 1 , wherein the diode is an organic light emitting diode.Join the waitlist — get patent alerts
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