Semiconductor device, method for manufacturing semiconductor device, module, and electronic device

Abstract

A semiconductor device with stable electrical characteristics is provided. Alternatively, a semiconductor device having normally-off electrical characteristics is provided. A semiconductor device includes a gate electrode, a gate insulator, and an oxide semiconductor, the oxide semiconductor contains fluorine in a channel formation region, and a fluorine concentration in the channel formation region is higher than or equal to 1×10 20 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3 . Note that fluorine is added by an ion implantation method.

What is claimed is: 
     
         1 . A semiconductor device comprising
 a first transistor including a first channel formation region, the first channel formation region comprising silicon;   a second transistor comprising an oxide semiconductor, the oxide semiconductor including a second channel formation region;   a capacitor,   wherein a first conductor overlaps with the first channel formation region,   wherein a second conductor is in contact with the oxide semiconductor,   wherein a third conductor is in contact with the oxide semiconductor and is electrically connected to the first conductor,   wherein the third conductor is one electrode of the capacitor,   wherein a first insulator is positioned over the first conductor,   wherein the oxide semiconductor is positioned over the first insulator,   wherein a second insulator is positioned the oxide semiconductor, the second conductor, and the third conductor,   wherein the second insulator include an opening,   wherein a fourth conductor is positioned in the opening, and   wherein the fourth conductor is electrically connected to the second conductor.   
     
     
         2 . A semiconductor device comprising
 a first transistor including a first channel formation region, the first channel formation region comprising silicon;   a second transistor comprising an oxide semiconductor, the oxide semiconductor including a second channel formation region;   a capacitor,   wherein a first conductor overlaps with the first channel formation region,   wherein a second conductor is in contact with the oxide semiconductor,   wherein a third conductor is in contact with the oxide semiconductor and is electrically connected to the first conductor,   wherein the third conductor is one electrode of the capacitor,   wherein a first insulator is positioned over the first conductor,   wherein the oxide semiconductor is positioned over the first insulator,   wherein a second insulator is positioned the oxide semiconductor, the second conductor, and the third conductor,   wherein the second insulator include an opening,   wherein a fourth conductor is positioned in the opening,   wherein the fourth conductor is electrically connected to the second conductor,   wherein the oxide semiconductor is interposed between a fifth conductor and a sixth conductor, and   wherein the fifth conductor, the sixth conductor, and the second channel formation region overlap with one another.   
     
     
         3 . A semiconductor device comprising
 a first transistor including a first channel formation region, the first channel formation region comprising silicon;   a second transistor comprising an oxide semiconductor, the oxide semiconductor including a second channel formation region;   a capacitor,   wherein a first conductor overlaps with the first channel formation region,   wherein a second conductor is in contact with the oxide semiconductor,   wherein a third conductor is in contact with the oxide semiconductor and is electrically connected to the first conductor,   wherein the third conductor is one electrode of the capacitor,   wherein a first insulator is positioned over the first conductor,   wherein the oxide semiconductor is positioned over the first insulator,   wherein a second insulator is positioned the oxide semiconductor, the second conductor, and the third conductor,   wherein the second insulator include an opening,   wherein a fourth conductor is positioned in the opening,   wherein the fourth conductor is electrically connected to the second conductor,   wherein a fifth conductor overlaps with the second channel formation region, and   wherein a part of a bottom surface of the fifth conductor is positioned under a bottom surface of the second channel formation region.   
     
     
         4 . A semiconductor device comprising
 a first transistor including a first channel formation region, the first channel formation region comprising silicon;   a second transistor comprising an oxide semiconductor, the oxide semiconductor including a second channel formation region;   a capacitor,   wherein a first conductor overlaps with the first channel formation region,   wherein a second conductor is in contact with the oxide semiconductor,   wherein a third conductor is in contact with the oxide semiconductor and is electrically connected to the first conductor,   wherein the third conductor is one electrode of the capacitor,   wherein a first insulator is positioned over the first conductor,   wherein the oxide semiconductor is positioned over the first insulator,   wherein a second insulator is positioned the oxide semiconductor, the second conductor, and the third conductor,   wherein the second insulator include an opening,   wherein a fourth conductor is positioned in the opening,   wherein the fourth conductor is electrically connected to the second conductor,   wherein the oxide semiconductor is interposed between a fifth conductor and a sixth conductor, and the fifth conductor is positioned over the oxide semiconductor,   wherein the fifth conductor, the sixth conductor, and the second channel formation region overlap with one another, and   wherein a part of a bottom surface of the fifth conductor is positioned under a bottom surface of the second channel formation region.