US2024045140A1PendingUtilityA1
Waveguide structures
Est. expiryAug 23, 2039(~13.1 yrs left)· nominal 20-yr term from priority
G02B 6/1225G02B 6/125G02B 1/002G02B 1/005G02B 2006/12061G02B 2006/12147G02B 2006/1213
78
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Claims
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.
Claims
exact text as granted — not AI-modifiedWhat is claimed:
1 . A structure comprising:
at least one bent waveguide structure; and metamaterial structures separated from the at least one bent waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one bent waveguide structure.
2 . The structure of claim 1 , wherein the metamaterial structures are bent structures with openings, the metamaterial structures being on opposing sides of the at least one bent waveguide structure.
3 . The structure of claim 1 , wherein the metamaterial structures are above the at least one bent waveguide structure.
4 . The structure of claim 1 , wherein the metamaterial structures are below the at least one bent waveguide structure.
5 . The structure of claim 1 , wherein the metamaterial structures are on sides of the at least one bent waveguide structure.
6 . The structure of claim 5 , wherein the metamaterial structures and the at least one bent waveguide structure are composed of silicon-on-insulator material, on a same level of a device.
7 . The structure of claim 5 , wherein the metamaterial structures and the at least one bent waveguide structure are composed of Si material.
8 . The structure of claim 2 , wherein the openings are filled with insulator material.
9 . The structure of claim 5 , wherein the metamaterial structures and the at least one bent waveguide structure have a same radius of curvature.
10 . The structure of claim 5 , wherein the metamaterial structures and the at least one bent waveguide structure are parallel.
11 . The structure of claim 1 , wherein the at least one bent waveguide structure and the metamaterial structures are of different materials.
12 . A structure comprising:
a curved waveguide structure; and bent metamaterial structures with openings, the bent metamaterial structures being separated from the curved waveguide structure by an insulator material.
13 . The structure of claim 12 , wherein the curved waveguide structure and the bent metamaterial structures are composed of a same material.
14 . The structure of claim 12 , wherein the bent metamaterial structures are on opposing sides of the curved waveguide structure.
15 . The structure of claim 12 , wherein the bent metamaterial structures are at a same level as the curved waveguide structure.
16 . A structure comprising:
a curved waveguide structure; and metamaterial structures separated from the curved waveguide structure by an insulator material, the metamaterial structures being above or below the curved waveguide structures.
17 . The structure of claim 16 , wherein the curved waveguide structure and the metamaterial structures are composed of a same material.
18 . The structure of claim 17 , wherein the metamaterial structures are above the curved waveguide structures.
19 . The structure of claim 16 , wherein the curved waveguide structure and the metamaterial structures are composed of different material.
20 . The structure of claim 19 , wherein the metamaterial structures are below the curved waveguide structures.Join the waitlist — get patent alerts
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