Double perovskite

Abstract

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].

1 - 38 . (canceled) 
     
     
         39 . A light-emitting device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising:
 (i) one or more first monocations [A];   (ii) one or more second monocations [B I ];   (iii) one or more trications [B III ]; and   (iv) one or more halide anions [X].   
     
     
         40 . A light-emitting device according to  claim 39 , wherein the one or more first monocations [A] are selected from metal monocations and organic monocations. 
     
     
         41 . A light-emitting device according to  claim 39 , wherein the one or more first monocations [A] are selected from K + , Rb + , Cs + , (NR 1 R 2 R 3 R 4 ) + , (R 1 R 2 N═CR 3 R 4 ) + , (R 1 R 2 N—C(R 5 )═NR 3 R 4 ) +  and (R 1 R 2 N) + , (NR 5 R 6 )═NR 3 R 4 ) + , wherein each of R 1 , R 2 , R 3 , R 4 , R 5  and R 6  is independently H, a substituted or unsubstituted C 1-20  alkyl group or a substituted or unsubstituted aryl group,
 preferably wherein the one or more first monocations [A] are selected from (CH 3 NH 3 ) + , (CH 3 CH 2 NH 3 ) + , (H 2 N—C(H)═NH 2 ) +  and (H 2 N—C(NH 2 )═NH 2 ) + . 
 
     
     
         42 . A light-emitting device according to  claim 39 , wherein the one or more second monocations [B I ] are selected from metal and metalloid monocations. 
     
     
         43 . A light-emitting device according to  claim 39 , wherein the one or more second monocations [B I ] are selected from Li + , Na + , K + , Rb + , Cs + , Cu + , Ag + , Au +  and Hg + ,
 preferably wherein the one or more second monocations [B I ] are selected from Cu + , Ag +  and Au + . 
 
     
     
         44 . A light-emitting device according to  claim 39 , wherein the one or more trications [B III ] are selected from metal and metalloid trications. 
     
     
         45 . A light-emitting device according to  claim 39 , wherein the one or more trications [B III ] are selected from Bi 3+ , Sb 3+ , Cr 3+ , Fe 3+ , Co 3+ , Ga 3+ , As 3+ , Ru 3+ , Rh 3+ , In 3+ , Tr 3+  and Au 3+ ,
 preferably wherein the one or more trications [B III ] are selected from Bi 3+  and Sb 3+ . 
 
     
     
         46 . A light-emitting device according to  claim 39 , wherein the one or more halide anions [X] are selected from I − , Br − , Cl −  and F − ,
 preferably wherein the one or more halide anions [X] are selected from I −  and Br − . 
 
     
     
         47 . A light-emitting device according to  claim 39 , wherein the compound is a double perovskite compound of formula (I):
   [A] 2 [B I ][B III ][X] 6   (I);
   
       wherein:
 [A] is the one or more first monocations; 
 [B I ] is the one or more second monocations; 
 [B III ] is the one or more trications; and 
 [X] is the one or more halide anions. 
 
     
     
         48 . A light-emitting device according to  claim 39 , wherein the compound is a double perovskite compound of formula (Ia):
   A 2 B I B III [X] 6   (Ia);
   
       wherein:
 A is one first monocation; 
 B I  is one second monocation; 
 B III  is one trication; and 
 [X] is the one or more halide anions. 
 
     
     
         49 . A light-emitting device according to  claim 39 , wherein the compound is (H 2 N—C(H)═NH 2 ) 2 AgBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiCl 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbCl 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbCl 6 , (H 2 N—C(H)═NH 2 ) 2 CuSbCl 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiF 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiF 6 , (H 2 N—C(H)═NH 2 ) 2 CuBiF 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbF 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbF 6 , (H 2 N—C(H)—NH 2 ) 2 CuSbF 6 , (CH 3 NH 3 ) 2 AgBiI 6 , (CH 3 NH 3 ) 2 AuBiI 6 , (CH 3 NH 3 ) 2 CuBiI 6 , (CH 3 NH 3 ) 2 AgSbI 6 , (CH 3 NH 3 ) 2 AuSbI 6 , (CH 3 NH 3 ) 2 CuSbI 6 , (CH 3 NH 3 ) 2 AgBiBr 6 , (CH 3 NH 3 ) 2 AuBiBr 6 , (CH 3 NH 3 ) 2 CuBiBr 6 , (CH 3 NH 3 ) 2 AgSbBr 6 , (CH 3 NH 3 ) 2 AuSbBr 6 , (CH 3 NH 3 ) 2 CuSbBr 6 , (CH 3 NH 3 ) 2 AgBiCl 6 , (CH 3 NH 3 ) 2 AuBiCl 6 , (CH 3 NH 3 ) 2 CuBiCl 6 , (CH 3 NH 3 ) 2 AgSbCl 6 , (CH 3 NH 3 ) 2 AuSbCl 6 , (CH 3 NH 3 ) 2 CuSbCl 6 , (CH 3 NH 3 ) 2 AgBiF 6 , (CH 3 NH 3 ) 2 AuBiF 6 , (CH 3 NH 3 ) 2 CuBiF 6 , (CH 3 NH 3 ) 2 AgSbF 6 , (CH 3 NH 3 ) 2 AuSbF 6 , (CH 3 NH 3 ) 2 CuSbF 6 , Cs 2 AgBiI 6 , Cs 2 AuBiI 6 , Cs 2 CuBiI 6 , Cs 2 AgSbI 6 , Cs 2 AuSbI 6 , Cs 2 CuSbI 6 , Cs 2 AgBiBr 6 , Cs 2 AuBiBr 6 , Cs 2 CuBiBr 6 , Cs 2 AgSbBr 6 , Cs 2 AuSbBr 6 , Cs 2 CuSbBr 6 , Cs 2 AgBiCl 6 , Cs 2 AuBiCl 6 , Cs 2 CuBiCl 6 , Cs 2 AgSbCl 6 , Cs 2 AuSbCl 6 , Cs 2 CuSbI 6 , Cs 2 AgBiF 6 , Cs 2 AuBiF 6 , Cs 2 CuBiF 6 , Cs 2 AgSbF 6 , Cs 2 AuSbF 6  or Cs 2 CuSbF 6 . 
     
     
         50 . A light-emitting device according to  claim 39 , wherein the compound is (H 2 N—C(H)═NH 2 ) 2 AgBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiI 6 , (H 2 N—C(H)═NH 2 ) 2 AgBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuBiBr 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbI 6 , (H 2 N—C(H)═NH 2 ) 2 AgSbBr 6 , (H 2 N—C(H)═NH 2 ) 2 AuSbBr 6 , (CH 3 NH 3 ) 2 AgBiI 6 , (CH 3 NH 3 ) 2 AuBiI 6 , (CH 3 NH 3 ) 2 AgBiBr 6 , (CH 3 NH 3 ) 2 AuBiBr 6 , (CH 3 NH 3 ) 2 AgSbI 6 , (CH 3 NH 3 ) 2 AuSbI 6 , (CH 3 NH 3 ) 2 AgSbBr 6  or (CH 3 NH 3 ) 2 AuSbBr 6 , preferably wherein the compound is (H 2 N—C(H)═NH 2 ) 2 AgBiI 6 , (H 2 N—C(H)—NH 2 ) 2 AuBiI 6 , (CH 3 NH 3 ) 2 AgBiI 6  or (CH 3 NH 3 ) 2 AuBiI 6 . 
     
     
         51 . A light-emitting device according to  claim 39 , wherein the compound is Cs 2 AgBiCl 6 . 
     
     
         52 . A light-emitting device according to  claim 39 , wherein the compound is a layered double perovskite compound of formula (II):
   [A] 4 [B I ][B III ][X] 8   (II);
   
       wherein:
 [A] is the one or more first monocations; 
 [B I ] is the one or more second monocations; 
 [B III ] is the one or more trications; and 
 [X] is the one or more halide anions. 
 
     
     
         53 . A light-emitting device according to  claim 52 , wherein the compound is (R 1 NH 3 ) 4 AgBiI 8 , (R 1 NH 3 ) 4 AuBiI 8 , (R 1 NH 3 ) 4 CuBiI 8 , (R 1 NH 3 ) 4 AgSbI 8 , (R 1 NH 3 ) 4 AuSbI 8 , (R 1 NH 3 ) 4 CuSbI 8 , (R 1 NH 3 ) 4 AgBiBr 8 , (R 1 NH 3 ) 4 AuBiBr 8 , (R 1 NH 3 ) 4 CuBiBr 8 , (R 1 NH 3 ) 4 AgSbBr 8 , (R 1 NH 3 ) 4 AuSbBr 8 , (R 1 NH 3 ) 4 CuSbBr 8 , (R 1 NH 3 ) 4 AgBiCl 8 , (R 1 NH 3 ) 4 AuBiCl 8 , (R 1 NH 3 ) 4 CuBiCl 8 , (R 1 NH 3 ) 4 AgSbCl 8 , (R 1 NH 3 ) 4 AuSbCl 8 , (R 1 NH 3 ) 4 CuSbCl 8 , (R 1 NH 3 ) 4 AgBiF 8 , (R 1 NH 3 ) 4 AuBiF 8 , (R 1 NH 3 ) 4 CuBiF 8 , (R 1 NH 3 ) 4 AgSbF 8 , (R 1 NH 3 ) 4 AuSbF 8  or (R 1 NH 3 ) 4 CuSbF 8 ,
 wherein R 1  is an unsubstituted C 3-12  alkyl group.   
     
     
         54 . A light-emitting device according to  claim 39 , wherein the compound further comprises one or more metal or metalloid dications, preferably wherein the one or more metal or metalloid dications are selected from Sn 2+ , Pb 2+ , Cu 2+ , Ge 2+  and Ni 2+ . 
     
     
         55 . A light-emitting device according to  claim 54 , wherein the compound is a hybrid double perovskite compound of formula (Iz) or a layered hybrid double perovskite compound of formula (IIz):
   [A] 2 [B I ] (2-x)/2 [B II ] x [B III ] (2-x)/2 [X] 6   (Iz);
     [A] 4 [B I ] (2-x)/2 [B II ] x [B III ] (2-x)/2 [X] 8   (IIz);
   
       wherein
 [A] is the one or more first monocations; 
 [B I ] is the one or more second monocations; 
 [B II ] is the one or more metal or metalloid dications; 
 [B III ] is the one or more trications; 
 [X] is the one or more halide anions; and 
 x is from 0.0 to 1.98. 
 
     
     
         56 . A light-emitting device according to  claim 54 , wherein the compound is a double perovskite compound of formula (Iza) or a layered double perovskite compound of formula (IIza):
   [A] 2 [B I ] 0.5 Pb[B III ] 0.5 [X] 6   (Iza);
     [A] 4 [B I ] 0.5 Pb[B III ] 0.5 [X] 8   (IIza);
   
       wherein
 [A] is the one or more first monocations; 
 [B I ] is the one or more second monocations; 
 [B III ] is the one or more trications; and 
 [X] is the one or more halide anions. 
 
     
     
         57 . A light-emitting device according to  claim 39 , wherein the light-emitting device is an optoelectronic device. 
     
     
         58 . A light-emitting device according to  claim 39 , wherein the light-emitting device is a light-emitting diode or a charge injection laser. 
     
     
         59 . A light-emitting device according to  claim 39 , which light-emitting device comprises a layer of the semiconducting material, which layer preferably has a thickness of from 5 nm to 1000 nm. 
     
     
         60 . A light-emitting device according to  claim 39 , which light-emitting device comprises:
 an n-type region comprising at least one n-type layer;   a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region:   a layer of the semiconducting material.   
     
     
         61 . A light-emitting device according to  claim 39 , which light-emitting device comprises a layer of said semiconducting material without open porosity. 
     
     
         62 . A light-emitting device according to  claim 60 , wherein the layer of the semiconducting material forms a planar heterojunction with the n-type region or the p-type region, or wherein the layer of the semiconducting material forms a first planar heterojunction with the n-type region and a second planar heterojunction with the p-type region. 
     
     
         63 . A light-emitting device according to  claim 39 , wherein the light-emitting device comprises:
 an n-type region comprising at least one n-type layer;   a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region:   (i) a porous scaffold material; and   (ii) said semiconducting material in contact with the scaffold material.   
     
     
         64 . A light-emitting device according to  claim 60 , wherein the n-type region comprises a compact layer of an n-type semiconductor, or wherein the p-type region comprises a layer of an organic p-type semiconductor. 
     
     
         65 . A light-emitting device according to  claim 39 , wherein said semiconducting material is a photoactive material. 
     
     
         66 . A light-emitting device according to  claim 39 , wherein said semiconducting material is a photoemissive material. 
     
     
         67 . A light-emitting device according to  claim 39 , wherein said compound is photoluminescent. 
     
     
         68 . A process for producing a light-emitting device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising:
 (i) one or more first monocations [A];   (ii) one or more second monocations [B I ];   (iii) one or more trications [B III ]; and   (iv) one or more halide anions [X],   which process comprises:   (a) disposing a second region on a first region, which second region comprises a layer of said semiconducting material.   
     
     
         69 . A process according to  claim 68 , wherein the semiconducting material is a photoactive material or a photoemissive material. 
     
     
         70 . A process according to  claim 68 , wherein the process further comprises
 (b) disposing a third region on the second region,   wherein:   said first region is an n-type region comprising at least one n-type layer and said third region is a p-type region comprising at least one p-type layer; or   said first region is a p-type region comprising at least one p-type layer and said third region is an n-type region comprising at least one n-type layer.   
     
     
         71 . A process according to  claim 68 , wherein (a) disposing a second region on a first region comprises:
 (Ai) exposing the first region to vapour, which vapour comprises said semiconducting material or one or more reactants for producing said semiconducting material; and   (Aii) allowing deposition of the vapour onto the first region to produce a layer of said semiconducting material thereon; or   (Bi) disposing one or more precursor compositions on the first region, which one or more precursor compositions comprise: said semiconducting material and one or more solvents; or one or more reactants for producing said semiconducting material and one or more solvents; and   (Bii) removing the one or more solvents to produce on the first region a layer of said semiconducting material.   
     
     
         72 . A process according to  claim 71 , wherein the one or more reactants for producing the semiconducting material comprise one or more first precursor compounds, one or more second precursor compounds and one or more third precursor compounds,
 which one or more first precursor compounds are selected from compounds of formula [A][X];   which one or more second precursor compounds are selected from compounds of formula [B I ][X]; and   which one or more second precursor compounds are selected from compounds of formula [B III ][X] 3 ;   wherein   [A] is the one or more first monocations;   [B I ] is the one or more second monocations;   [B III ] is the one or more trications; and   each [X] is the one or more halide anions.   
     
     
         73 . A process according to  claim 68 , wherein the light-emitting device is an optoelectronic device. 
     
     
         74 . A process according to  claim 68 , wherein the light-emitting device is a light-emitting diode or a charge injection laser. 
     
     
         75 . A process according to  claim 68 , wherein said compound is photoluminescent. 
     
     
         76 . A light-emitting device obtainable by a process for producing a light-emitting device as defined in  claim 68 .