Semiconductor device

Abstract

According to one embodiment, a semiconductor device includes a stacked body, a columnar portion, a first charge storage portion, and a second charge storage portion. The stacked body includes a plurality of electrode layers stacked in a first direction. The plurality of electrode layers includes a first electrode layer, and a second electrode layer. The columnar portion extends in the first direction in the stacked body. The first charge storage portion provides between the first electrode layer and the columnar portion. The second charge storage portion provides between the second electrode layer and the columnar portion. A first thickness in a second direction intersecting the first direction of the first charge storage portion between the first electrode layer and the columnar portion is thicker than a second thickness in the second direction of the second charge storage portion between the second electrode layer and the columnar portion.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a substrate;   a first stacked body disposed above the substrate, the first stacked body including a first electrode layer and a second electrode layer, the second electrode layer being disposed above the first electrode layer;   a first semiconductor layer extending in a first direction in the first stacked body;   a first charge storage portion provided between the first semiconductor layer and the first electrode layer;   a second charge storage portion provided between the first semiconductor layer and the second electrode layer;   a second stacked body disposed on the first stacked body, the second stacked body including a third electrode layer and a fourth electrode layer, the fourth electrode layer being disposed above the third electrode layer;   a second semiconductor layer extending in the first direction in the second stacked body, a bottom end of the second semiconductor layer connecting a top end of the first semiconductor layer;   a third charge storage portion provided between the second semiconductor layer and the third electrode layer; and   a fourth charge storage portion provided between the second semiconductor layer and the fourth electrode layer,   a first diameter of a first portion of the first semiconductor layer being smaller than a second diameter of a second portion of the first semiconductor layer, the first portion being surrounded by the first charge storage portion, and the second portion being surrounded by the second charge storage portion,   a third diameter of a third portion of the second semiconductor layer being smaller than a fourth diameter of a fourth portion of the second semiconductor layer, the third portion being surrounded by the third charge storage portion, and the fourth portion being surrounded by the fourth charge storage portion,   the second diameter being larger than the third diameter,   a first thickness of the first charge storage portion between the first semiconductor layer and the first electrode layer being thinner than a second thickness of the second charge storage portion between the first semiconductor layer and the second electrode layer, and   a third thickness of the third charge storage portion between the second semiconductor layer and the third electrode layer being thinner than a fourth thickness of the fourth charge storage portion between the second semiconductor layer and the fourth electrode layer.