Functional panel, method for manufacturing the same, module, data processing device

Abstract

A novel, highly convenient or reliable functional panel is provided. A novel, highly convenient or reliable method for manufacturing a functional panel is provided. The functional panel includes a first base; a second base having a region overlapping with the first base; a bonding layer that bonds the first base to the second base; and an insulating layer in contact with the first base, the second base, and the bonding layer. With this structure, an opening which is formed easily in a region where the bonding layer is in contact with the first base or the second base can be filled with the insulating layer, which can prevent impurities from being diffused into the functional layer located in a region surrounded by the first base, the second base, and the bonding layer that bonds the first base to the second base.

1 . A method for manufacturing a light-emitting device comprising the step of:
 forming a light-emitting element over a base; and   forming an insulating layer over the light-emitting element by an atomic layer deposition method, the insulating layer comprising at least one of silicon oxide and silicon nitride.   
     
     
         2 . The method according to  claim 1 ,
 wherein the insulating layer is in contact with a top electrode of the light-emitting element.   
     
     
         3 . The method according to  claim 1 ,
 wherein a thickness of the insulating layer is greater than or equal to 20 nm and less than or equal to 200 nm.   
     
     
         4 . The method according to  claim 1 ,
 wherein the light-emitting element is an organic electroluminescence element.   
     
     
         5 . A method for manufacturing a light-emitting device comprising the step of:
 forming a light-emitting element over a base; and   forming an insulating layer over the light-emitting element by an atomic layer deposition method, the insulating layer comprising at least one of silicon oxide and silicon nitride,   wherein the insulating layer includes a region positioned below the light-emitting element.   
     
     
         6 . The method according to  claim 5 ,
 wherein the insulating layer is in contact with a top electrode of the light-emitting element.   
     
     
         7 . The method according to  claim 5 ,
 wherein a thickness of the insulating layer is greater than or equal to 20 nm and less than or equal to 200 nm.   
     
     
         8 . The method according to  claim 5 ,
 wherein the light-emitting element is an organic electroluminescence element.