Semiconductor laser

Abstract

The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.

1 - 14 . (canceled) 
     
     
         16 . A semiconductor laser, comprising:
 a carrier,   an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area,   an optical element which covers the facet,   a connecting material which is arranged between the optical element and the facet,   a molded body which covers the laser diode and the optical element at least in places, wherein   the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation,   the optical element is designed to change a main propagation direction of the laser radiation entering the optical element during operation,   the optical element has the shape of a segment of a sphere or an ellipsoid,   a main propagation radiation direction of the laser diode is transverse or perpendicular to a main propagation radiation direction of the semiconductor laser.   
     
     
         17 . The semiconductor laser according to  claim 16 , in which the molded body completely covers the laser diode on at least one side. 
     
     
         18 . The semiconductor laser according to  claim 16 , in which the carrier is surrounded at least in places by the molded body in lateral directions, the lateral directions being parallel to the main extension plane of the carrier. 
     
     
         19 . The semiconductor laser according to  claim 16 , which has a radiation exit surface that is free of the molded body. 
     
     
         20 . The semiconductor laser according to  claim 16 , in which the optical element completely covers the facet. 
     
     
         21 . The semiconductor laser according to  claim 16 , in which an anti-reflective layer is applied on the optical element on the side facing the radiation exit area. 
     
     
         22 . The semiconductor laser according to  claim 16 , in which the optical element has a radiation exit side on which a further anti-reflective layer is applied. 
     
     
         23 . The semiconductor laser according to  claim 22 , in which a photocatalytically acting layer is applied on the radiation exit side of the optical element to support decomposition reactions on the radiation exit side. 
     
     
         24 . The semiconductor laser according to  claim 16 , in which the optical element is designed to shape the laser radiation entering the optical element during operation. 
     
     
         25 . The semiconductor laser according to  claim 24 , which comprises a beam combiner, wherein the semiconductor laser comprises two further edge-emitting laser diodes, each of which is arranged on a carrier, one optical element each covers the facet of one further edge-emitting laser diode, and the beam combiner is arranged downstream of the three optical elements of the laser diode and the two further edge-emitting laser diodes. 
     
     
         26 . The semiconductor laser according to  claim 16 , in which the optical element is followed by a conversion element which is designed to convert the wavelength of the radiation emitted by the laser diode during operation. 
     
     
         27 . A semiconductor laser, comprising:
 a carrier,   an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area,   an optical element which covers the facet,   a connecting material which is arranged between the optical element and the facet,   a molded body which covers the laser diode and the optical element at least in places,   two further edge-emitting laser diodes, each of which is arranged on a carrier, wherein   the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and   the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.