Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes a capacitor including a lower electrode an upper electrode, and a dielectric layer between the lower electrode and the upper electrode. The lower electrode includes ABO3 where ‘A’ is a first metal element and ‘B’ is a second metal element having a work function greater than that of the first metal element. The dielectric layer includes CDO3 where ‘C’ is a third metal element and ‘D’ is a fourth metal element. The lower electrode includes a first layer and a second layer which are alternately and repeatedly stacked. The first layer includes the first metal element and oxygen. The second layer includes the second metal element and oxygen. The dielectric layer is in contact with the lower electrode at a first contact surface the first contact surface corresponding to the second layer.

What is claimed is: 
     
         1 . A semiconductor device comprising a capacitor on a substrate, the capacitor including a first electrode, a dielectric layer, and an second electrode sequentially stacked on the substrate,
 wherein the first electrode has a pillar shape;   the first electrode includes ABO 3  where ‘A’ is a first metal element and ‘B’ is a second metal element having a work function greater than that of the first metal element;   the dielectric layer includes CDO 3  where ‘C’ is a third metal element and ‘D’ is a fourth metal element;   the first electrode includes a first layer and a second layer which are alternately and repeatedly stacked;   the first layer includes the first metal element and oxygen;   the second layer includes the second metal element and oxygen; and   the dielectric layer is in contact with the first electrode at a first contact surface, the first contact surface corresponding to the second layer.   
     
     
         2 . The semiconductor device of  claim 1 , further comprises,
 a first conductive line buried in an upper portion of the substrate, the first conductive line extending in a first direction;   an active portion in the upper portion of the substrate, the active portion defined by a device isolation pattern, the active portion including a first dopant region and a second dopant region which are separated from each other with the first conductive line interposed between the first dopant region and the second dopant region;   a second conductive line on the substrate, the second conductive line extending in a second direction intersecting the first direction, the second conductive line connected to the first dopant region;   a contact connected to the second dopant region.   
     
     
         3 . The semiconductor device of  claim 1 , wherein the first contact surface has a {100} crystal plane. 
     
     
         4 . The semiconductor device of  claim 1 , wherein each of the first electrode and the dielectric layer have a perovskite crystal structure. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the dielectric layer includes a third layer and a fourth layer which are alternately and repeatedly stacked;
 the third layer includes the third metal element and oxygen;   the fourth layer includes the fourth metal element and oxygen; and   the dielectric layer is in contact with the first electrode at a second contact surface, the second contact surface corresponding to the third layer.   
     
     
         6 . The semiconductor device of  claim 5 , wherein a work function of the fourth metal element is greater than a work function of the third metal element. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the work function of the second metal element is greater than a work function of the fourth metal element. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the work function of the second metal element is greater than 4.5 eV and less than 6 eV. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the first metal element is at least one of Sr, Ba, La, or Ca. 
     
     
         10 . The semiconductor device of  claim 1 , wherein the second metal element is at least one of Ru, Mo, Ir, Co, or Ni. 
     
     
         11 . The semiconductor device of  claim 1 , wherein the third metal element is at least one of Ba, Sr, or Ca. 
     
     
         12 . The semiconductor device of  claim 1 , wherein the fourth metal element is at least one of Ti, Zr, or Hf. 
     
     
         13 . The semiconductor device of  claim 1 , wherein a thickness of the first electrode is between 50 Å to 100 Å. 
     
     
         14 . The semiconductor device of  claim 1 , wherein
 the first electrode comprises a base electrode and a lower electrode; and   the lower electrode covers a sidewall of the base electrode and a top surface of the base electrode.   
     
     
         15 . The semiconductor device of  claim 1 , further comprises a support pattern supporting a sidewall of the first electrode. 
     
     
         16 . A semiconductor device comprising
 a capacitor on a substrate, the capacitor including a first electrode, a dielectric layer, and an second electrode sequentially stacked on the substrate,   wherein the first electrode has a pillar shape;   a top surface of the first electrode contacts a bottom surface of the dielectric layer;   the first electrode includes a first metal element, a second metal element, and oxygen;   the dielectric layer includes a third metal element, a fourth metal element, and oxygen,   the first electrode includes a first layer and a second layer which are alternately and repeatedly stacked;   the first layer includes the first metal element and oxygen, and the second layer includes the second metal element and oxygen;   the first metal element is at least one of Sr, Ba, La, or Ca, and the second metal element is at least one of Ru, Mo, Ir, Co, or Ni; and   the dielectric layer contacts the first electrode at a first contact surface, the first contact surface corresponding to the second layer.   
     
     
         17 . The semiconductor device of  claim 16 , wherein
 the dielectric layer includes a third layer and a fourth layer which are alternately and repeatedly stacked;   the third layer includes the third metal element and oxygen;   the fourth layer includes the fourth metal element and oxygen; and   the dielectric layer contacts the first electrode at a second contact surface, the second contact surface corresponding to one of the third layer or the fourth layer, the one of the third layer or the fourth layer having a smaller work function than the other of the third layer or the fourth layer.   
     
     
         18 . The semiconductor device of  claim 16 , wherein
 the third metal element is at least one of Ba, Sr, or Ca; and   the fourth metal element is at least one of Ti, Zr, or Hf.   
     
     
         19 . The semiconductor device of  claim 16 , wherein
 the capacitor further comprises a base electrode; and   the first electrode covers a sidewall of the base electrode and a top surface of the base electrode.   
     
     
         20 . The semiconductor device of  claim 16 , further comprises a support pattern supporting a sidewall of the first electrode.