Substrate processing apparatus, substrate processing method, and storage medium

Abstract

A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.

1 - 20 . (canceled) 
     
     
         21 . A substrate processing apparatus comprising:
 a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate   wherein the heat processing unit comprises:   a heater configured to support and heat the substrate;   a chamber configured to cover the substrate supported on the heater;   a gas ejector having a head in which a plurality of ejection holes scattered along a surface facing the substrate supported on the heater is formed, and configured to eject a gas from the plurality of ejection holes toward a surface of the substrate;   an exhauster configured to evacuate a processing space inside the chamber,   wherein the gas is an adjusted gas generated by mixing one component and another component and adjusted such that a concentration of the one component becomes a predetermined value.   
     
     
         22 . The substrate processing apparatus of  claim 21 , wherein the one component is oxygen. 
     
     
         23 . The substrate processing apparatus of  claim 21 , wherein when the heat process is performed, the chamber forms a communication portion connecting the processing space and an external space of the chamber. 
     
     
         24 . The substrate processing apparatus of  claim 21 , wherein the exhauster is an outer peripheral exhauster configured to evacuate the processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater. 
     
     
         25 . The substrate processing apparatus of  claim 21 , further comprising:
 a gas supply unit configured to generate the adjusted gas by mixing a first gas containing the one component and a second gas containing the another component, and to supply the adjusted gas to the gas ejector,   wherein the gas supply unit is arranged in a separate space partitioned from a space in which the heat processing unit is arranged.   
     
     
         26 . The substrate processing apparatus of  claim 21 , wherein the heater comprises:
 a hot plate configured to generate heat for heating the substrate;   a plurality of gap pins provided on a main surface of the hot plate to support the substrate such that a gap is formed between the main surface and the substrate; and   a suction hole formed in the main surface, and configured to suction the substrate placed on the plurality of gap pins,   wherein the plurality of gap pins includes a first group of gap pins arranged in a suction region of the main surface in the vicinity of the suction hole, and a second group of gap pins arranged in a non-suction region of the main surface other than the suction region, and   wherein the number of gap pins of the first group per unit area in the suction region is greater than the number of gap pins of the second group per unit area in the non-suction region.   
     
     
         27 . The substrate processing apparatus of  claim 21 , wherein the substrate processing apparatus comprises a plurality of heat processing units including the heat processing unit, and
 wherein the heater comprises:   a hot plate configured to generate heat for heating the substrate;   a plurality of gap pins provided on a main surface of the hot plate to support the substrate such that a gap is formed between the main surface and the substrate; and   a suction hole formed in the main surface to suction the substrate placed on the plurality of gap pins,   wherein the plurality of heat processing units comprises a first heat processing unit and a second heat processing unit,   wherein a heating temperature of the substrate in the heat process performed by the first heat processing unit is higher than a heating temperature of the substrate in the heat process performed by the second heat processing unit, and   wherein the number of the plurality of gap pins included in the heater of the first heat processing unit is greater than the number of the plurality of gap pins included in the heater of the second heat processing unit.   
     
     
         28 . A substrate processing method comprising:
 performing a heat process on a substrate having a film formed on the substrate,   wherein the performing the heat process on the substrate comprises:   causing the substrate to be supported on and heated by a heater in a state in which the substrate is covered by a chamber;   evacuating a processing space inside the chamber; and   ejecting a gas toward a surface of the substrate from a plurality of ejection holes scattered along a surface facing the substrate supported on the heater,   wherein the gas is an adjusted gas generated by mixing one component and another component and adjusted such that a concentration of the one component becomes a predetermined value.   
     
     
         29 . A non-transitory computer-readable storage medium storing a program that causes an apparatus to execute the substrate processing method of  claim 28 .