Silicon ingot, silicon block, silicon substrate, method for manufacturing silicon ingot, and solar cell

Abstract

An ingot includes a first surface, a second surface opposite to the first surface, and a third surface positioned along a first direction and connecting the first surface and the second surface. The ingot includes: a first pseudo single crystal region; an intermediate region containing one or more pseudo single crystal regions; and a second pseudo single crystal region. The first pseudo single crystal region, the intermediate region, and the second pseudo single crystal region are positioned adjacent sequentially in a second direction perpendicular to the first direction. In the second direction, a width of each of the first and second pseudo single crystal regions is larger than a width of the first intermediate region. Each of a boundary between the first pseudo single crystal region and the intermediate region and a boundary between the second pseudo single crystal region and the intermediate region includes a coincidence boundary.

1 . A silicon ingot including a first surface, a second surface positioned on an opposite side of the first surface, and a third surface positioned along a first direction in a state of connecting the first surface and the second surface, the silicon ingot comprising:
 a first pseudo single crystal region;   a first intermediate region containing one or more pseudo single crystal regions; and   a second pseudo single crystal region, wherein   the first pseudo single crystal region, the first intermediate region, and the second pseudo single crystal region are positioned adjacent sequentially in a second direction perpendicular to the first direction,   in the second direction, each of a first width of the first pseudo single crystal region and a second width of the second pseudo single crystal region is larger than a third width of the first intermediate region,   each of a boundary between the first pseudo single crystal region and the first intermediate region and a boundary between the second pseudo single crystal region and the first intermediate region includes a coincidence boundary, and   a crystal orientation along the first direction in each of the first pseudo single crystal region, the second pseudo single crystal region, and the one or more pseudo single crystal regions is a<100>orientation in a Miller index.