Array substrate, manufacturing method thereof and display device

Abstract

An array substrate, a manufacturing method thereof and a display device are provided. The array substrate comprises a substrate, an active layer, a source and drain layer, a gate insulating layer and a gate. The active layer comprises an active section and a connecting section. The source and drain layer is disposed on the connecting section and contacts with the connecting section to be connected thereto; an area of a contact surface of the source and drain layer in contact with the connecting section is greater than an area of an orthographic projection of the contact surface of the source and drain layer in contact with the connecting section on the substrate.

What is claimed is: 
     
         1 . An array substrate, comprising:
 a substrate;   an active layer arranged on the substrate, the active layer comprising an active section and a connecting section arranged on at least one side of the active section;   a source and drain layer, arranged on the connecting section and is in contact with the connecting section;   wherein an area of a contact surface of the source and drain layer in contact with the connecting section is greater than an area of an orthographic projection of the contact surface of the source and drain layer in contact with the connecting section on the substrate.   
     
     
         2 . The array substrate according to  claim 1 , wherein a contact surface of the connecting section in contact with the source and drain layer comprises at least one first convex portion, and the source and drain layer comprises a first concave portion matching with the first convex portion. 
     
     
         3 . The array substrate according to  claim 2 , wherein a supporting layer is provided between the active layer and the substrate, and the supporting layer comprises a supporting convex matching the first convex portion at a position corresponding to the first convex portion. 
     
     
         4 . The array substrate according to  claim 3 , wherein a material of the supporting layer is silicon oxide or silicon nitride. 
     
     
         5 . The array substrate according to  claim 2 , wherein the contact surface of the active layer in contact with the source and drain layer comprises at least one second concave portion, and the source and drain layer comprises a second convex portion matching with the second concave portion. 
     
     
         6 . The array substrate according to  claim 2 , wherein an insulating layer is provided on the source and drain layer, and the insulating layer covers the active layer and the source and drain layer, and a gate groove is formed in the insulating layer, and a gate layer is formed in the gate groove, and a surface of the insulating layer away from the source and drain layer and a surface of the gate layer away from the source and drain layer are coplanar. 
     
     
         7 . The array substrate according to  claim 1 , wherein the connecting section comprises a first connecting section and a second connecting section respectively connected to the active section, and the source and drain layer comprises a source arranged on the first connecting section and a drain arranged on the second connecting section, and a contact area of the source with the first connecting section is greater than an area of an orthographic projection of a contact surface of the source in contact with the first connecting section on the substrate, or a contact area of the drain with the second connecting section is greater than an area of an orthographic projection of a contact surface of the drain in contact with the second connecting section on the substrate. 
     
     
         8 . The array substrate according to  claim 1 , wherein the source and drain layer comprises an oxide metal layer and a metal layer, and the metal layer is connected to the connecting section through the oxide metal layer, and an area of a contact surface of the oxide metal layer in contact with the connecting section is less than an area of a contact surface of the oxide metal layer in contact with the source and drain layer. 
     
     
         9 . The array substrate according to  claim 8 , wherein a thickness of the metal oxide layer is less than 5 nm, and a material of the metal oxide layer is titanium oxide, cobalt oxide or nickel oxide. 
     
     
         10 . A manufacturing method of an array substrate, comprising steps of:
 forming a substrate;   forming an active layer on the substrate, and the active layer comprises an active section and a connecting section arranged on at least one side of the active section;   forming a source and drain layer on the connecting section and the source and drain layer is in contact with the connecting section;   wherein an area of a contact surface of the source and drain layer in contact with the connecting section is greater than an area of an orthographic projection of the contact surface of the source and drain layer in contact with the connecting section on the substrate.   
     
     
         11 . A display device, comprising an array substrate, and the array substrate comprises:
 a substrate;   an active layer arranged on the substrate, the active layer comprising an active section and a connecting section arranged on at least one side of the active section;   a source and drain layer, arranged on the connecting section and is in contact with the connecting section;   wherein an area of a contact surface of the source and drain layer in contact with the connecting section is greater than an area of an orthographic projection of the contact surface of the source and drain layer in contact with the connecting section on the substrate.   
     
     
         12 . The display device according to  claim 11 , wherein a contact surface of the connecting section in contact with the source and drain layer comprises at least one first convex portion, and the source and drain layer comprises a first concave portion matching with the first convex portion. 
     
     
         13 . The display device according to  claim 12 , wherein a supporting layer is provided between the active layer and the substrate, and the supporting layer comprises a supporting convex matching the first convex portion at a position corresponding to the first convex portion. 
     
     
         14 . The display device according to  claim 13 , wherein a material of the supporting layer is of silicon oxide or silicon nitride. 
     
     
         15 . The display device according to  claim 12 , wherein the contact surface of the active layer in contact with the source and drain layer comprises at least one second concave portion, and the source and drain layer comprises a second convex portion matching with the second concave portion. 
     
     
         16 . The display device according to  claim 11 , wherein an insulating layer is provided on the source and drain layer, and the insulating layer covers the active layer and the source and drain layer, and a gate groove is formed in the insulating layer, and a gate layer is formed in the gate groove, and a surface of the insulating layer away from the source and drain layer and a surface of the gate layer away from the source and drain layer are coplanar. 
     
     
         17 . The display device according to  claim 11 , wherein the connecting section comprises a first connecting section and a second connecting section respectively connected to the active section, and the source and drain layer comprises a source arranged on the first connecting section and a drain arranged on the second connecting section, and a contact area of the source with the first connecting section is greater than an area of an orthographic projection of a contact surface of the source in contact with the first connecting section on the substrate, or a contact area of the drain with the second connecting section is greater than an area of an orthographic projection of a contact surface of the drain in contact with the second connecting section on the substrate. 
     
     
         18 . The display device according to  claim 11 , wherein the source and drain layer comprises an oxide metal layer and a metal layer, and the metal layer is connected to the connecting section through the oxide metal layer, and an area of a contact surface of the oxide metal layer in contact with the connecting section is less than an area of a contact surface of the oxide metal layer in contact with the source and drain layer. 
     
     
         19 . The display device according to  claim 18 , wherein a thickness of the metal oxide layer is less than 5 nm, and a material of the metal oxide layer is titanium oxide, cobalt oxide or nickel oxide. 
     
     
         20 . The display device according to  claim 19 , wherein the material of the metal oxide layer is nickel oxide.