Epitaxial processing of single-crystalline films on amorphous substrates

Abstract

There is a method for making a high-performance opto-electronic device on an amorphous substrate. The method includes growing on a single-crystal substrate, a single-crystal, oxide film; applying a first chemical processing to the single-crystal, oxide film to obtain a first transferrable, single-crystal, chalcogenide film; transferring the transferrable, single crystal, chalcogenide film from the single-crystal substrate to an amorphous substrate or polycrystalline metal substrate; applying a second chemical processing to the transferrable, single-crystal, chalcogenide film to obtain a single-crystal, non-oxide film, wherein the single-crystal, non-oxide film is different from the transferrable, single-crystal, chalcogenide film; and growing a wide-bandgap semiconductor film using the single-crystal, non-oxide film as a seeding layer to obtain the opto-electronic device on the amorphous glass or polycrystalline metal substrate. The first chemical processing is different from the second chemical processing.

1 . A method for making a high-performance opto-electronic device on an amorphous substrate, the method comprising:
 growing on a single-crystal substrate, a single-crystal, oxide film;   applying a first chemical processing to the single-crystal, oxide film to obtain a first transferrable, single-crystal, chalcogenide film;   transferring the transferrable, single crystal, chalcogenide film from the single-crystal substrate to an amorphous substrate or polycrystalline metal substrate;   applying a second chemical processing to the transferrable, single-crystal, chalcogenide film to obtain a single-crystal, non-oxide film), wherein the single-crystal, non-oxide film is different from the transferrable, single-crystal, chalcogenide film; and   growing a wide-bandgap semiconductor film using the single-crystal, non-oxide film as a seeding layer to obtain the opto-electronic device on the amorphous glass or polycrystalline metal substrate,   wherein the first chemical processing is different from the second chemical processing.   
     
     
         2 . The method of  claim 1 , wherein the first chemical processing is one of sulfurization or selenylation, and the second chemical processing is one of nitridation or carbonization. 
     
     
         3 . The method of  claim 1 , wherein the single-crystal, oxide film is one of MoO 2 , WO 2 , NbO 2 , and VO 2 . 
     
     
         4 . The method of  claim 1 , wherein the transferrable, single-crystal, chalcogenide layer is one of MoS 2 , WS 2 , NbS 2 , and VS 2 . 
     
     
         5 . The method of  claim 1 , wherein the single-crystal, non-oxide layer is one of MoN, WN, NbN, VN, and Mo 2 C. 
     
     
         6 . The method of  claim 1 , wherein the first chemical processing is sulfurization and the second chemical processing is nitridation. 
     
     
         7 . The method of  claim 1 , wherein the single-crystal substrate is Al 2 O 3  and the amorphous substrate is an amorphous quartz. 
     
     
         8 . The method of  claim 1 , wherein the step of forming the wide-bandgap semiconductor film comprises:
 forming a GaN buffer layer over the single-crystal, non-oxide film on the amorphous substrate or the polycrystalline metal substrate;   forming an n-type GaN layer over the GaN buffer layer;   forming a multi-quantum well layer over the N-type GaN layer; and   forming a p-type GaN layer over the multi-quantum well layer.   
     
     
         9 . The method of  claim 1 , wherein the opto-electronic device is one of a light emitting diode, a photodetector, or a transistor. 
     
     
         10 . An opto-electronic device comprising:
 an amorphous substrate or a polycrystalline metal substrate;   a single-crystal, non-oxide film located directly on the amorphous substrate or the polycrystalline metal substrate;   a GaN buffer layer located directly over the single-crystal, non-oxide film;   an n-type GaN layer located directly over the GaN buffer layer;   a multi-quantum well layer located over the N-type GaN layer; and   a p-type GaN layer located over the multi-quantum well layer.   
     
     
         11 . The device of  claim 10 , wherein the single-crystal, non-oxide film was obtained from a single-crystal, oxide film that was grown on a single-crystal substrate, the single-crystal, oxide film was transformed with a first chemical processing into an intermediary, transferrable, single-crystal, chalcogenide film, the intermediary, transferrable, single-crystal, chalcogenide film was transferred from the single-crystal substrate to the amorphous substrate or the polycrystalline metal substrate, and a second chemical processing was applied to the intermediary, transferrable, single-crystal, chalcogenide film to obtain the single-crystal, non-oxide film,
 wherein the single-crystal, non-oxide film is different from the intermediary, transferrable, single crystal, chalcogenide film, and   wherein the first chemical processing is one of sulfurization or selenylation, and the second chemical processing is one of nitridation or carbonization.   
     
     
         12 . The device of  claim 10 , wherein the single-crystal, oxide film is one of MoO 2 , WO 2 , NbO 2 , and VO 2 . 
     
     
         13 . The device of  claim 10 , wherein the intermediary, transferrable, single-crystal, chalcogenide film is one of MoS 2 , WS 2 , NbS 2 , and VS 2 . 
     
     
         14 . The device of  claim 10 , wherein the single-crystal, non-oxide film is one of MoN, WN, NbN, VN, and Mo 2 C. 
     
     
         15 . The device of  claim 10 , wherein the single-crystal substrate is Al 2 O 3  and the amorphous substrate is an amorphous quartz. 
     
     
         16 . The device of  claim 10 , wherein the opto-electronic device is one of a light emitting diode, a photodetector, or a transistor. 
     
     
         17 . The device of  claim 10 , further comprising:
 a transparent indium-tin-oxide (ITO) layer formed on the p-type GaN layer;   a first electrode formed directly on the ITO layer; and   a second electrode formed directly on the n-type GaN layer.   
     
     
         18 . The device of  claim 10 , wherein a size of the single-crystal, non-oxide film is 10 cm by 10 cm or larger. 
     
     
         19 . A method for forming an opto-electronic device, the method comprising:
 transferring a transferrable, single-crystal, chalcogenide film from a single-crystal substrate to an amorphous substrate;   applying a chemical processing to the transferrable, single-crystal, chalcogenide film to obtain a single-crystal, non-oxide film, wherein the single-crystal, non-oxide film is different from the transferrable, single crystal, chalcogenide film; and   forming an additional film on the single-crystal, non-oxide film to obtain the opto-electronic device.   
     
     
         20 . The method of  claim 19 , further comprising:
 growing a single-crystal, oxide film on a single-crystal substrate; and   applying another chemical processing to the single-crystal, oxide film to obtain the transferrable, single-crystal, chalcogenide film.