Display device and method of manufacturing the display device

Abstract

A display device includes a first conductive layer; a first insulating layer on the first conductive layer; a semiconductor layer disposed on the first insulating layer and electrically connected to the first conductive layer; a second conductive layer disposed on the semiconductor layer and electrically connected to the first conductive layer; and light emitting elements on the second conductive layer. A thickness of a part of the first insulating layer in a first area, which overlaps the semiconductor layer in a plan view, is different from a thickness of another part of the first insulating layer in a second area, which is exposed by the semiconductor layer.

What is claimed is: 
     
         1 . A display device comprising:
 a first conductive layer;   a first insulating layer on the first conductive layer;   a semiconductor layer disposed on the first insulating layer and electrically connected to the first conductive layer;   a second conductive layer disposed on the semiconductor layer and electrically connected to the first conductive layer; and   light emitting elements on the second conductive layer,   wherein a thickness of a part of the first insulating layer in a first area, which overlaps the semiconductor layer in a plan view, is different from a thickness of another part of the first insulating layer in a second area, which is exposed by the semiconductor layer.   
     
     
         2 . The display device of  claim 1 , wherein the semiconductor layer is in electrical contact with the first conductive layer through a first contact hole formed through the first insulating layer in the first area. 
     
     
         3 . The display device of  claim 1 , wherein the second conductive layer is in electrical contact with the first conductive layer through a second contact hole formed through the first insulating layer in the second area. 
     
     
         4 . The display device of  claim 1 , wherein the thickness of the part of the first insulating layer in the first area is thicker than the thickness of the another part of the first insulating layer in the second area. 
     
     
         5 . The display device of  claim 1 , further comprising:
 a second insulating layer on the second semiconductor layer.   
     
     
         6 . The display device of  claim 5 , wherein the second insulating layer is disposed in the first area and exposes the second area. 
     
     
         7 . The display device of  claim 5 , wherein the second conductive layer is disposed directly on the second insulating layer in the first area. 
     
     
         8 . The display device of  claim 1 , wherein the second conductive layer is disposed directly on the first insulating layer in the second area. 
     
     
         9 . The display device of  claim 1 , further comprising:
 a first connection electrode disposed on first end portions of the light emitting elements; and   a second connection electrode disposed on second end portions of the light emitting elements.   
     
     
         10 . The display device of  claim 9 , wherein the first connection electrode and the second connection electrode are disposed on a same layer. 
     
     
         11 . A method of manufacturing a display device, the method comprising:
 forming a first insulating layer on a first conductive layer;   forming a semiconductor layer on a first area of the first insulating layer;   etching a second area of the first insulating layer, which is exposed by the semiconductor layer;   forming a second conductive layer on the second area of the first insulating layer; and   providing light emitting elements on the second conductive layer.   
     
     
         12 . The method of  claim 11 , further comprising:
 forming a first contact hole in the first area of the first insulating layer.   
     
     
         13 . The method of  claim 12 , wherein the forming of the first contact hole further comprises partially etching the second area of the first insulating layer. 
     
     
         14 . The method of  claim 12 , wherein the semiconductor layer is in electrical contact with the first conductive layer through the first contact hole. 
     
     
         15 . The method of  claim 11 , further comprising:
 forming a second contact hole in the second area of the first insulating layer.   
     
     
         16 . The method of  claim 15 , wherein the second conductive layer is in electrical contact with the first conductive layer through the second contact hole. 
     
     
         17 . The method of  claim 11 , further comprising:
 forming a second insulating layer on the semiconductor layer.   
     
     
         18 . The method of  claim 17 , further comprising:
 etching the semiconductor layer and the second insulating layer.   
     
     
         19 . The method of  claim 11 , further comprising:
 forming a first connection electrode on first end portions of the light emitting elements; and   forming a second connection electrode on second end portions of the light emitting elements.   
     
     
         20 . The method of  claim 19 , wherein the first connection electrode and the second connection electrode are simultaneously formed through a same process.