US2024021574A1PendingUtilityA1

Cu-cu direct welding for packaging application in semiconductor industry

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Assignee: UNIV HONG KONGPriority: Dec 16, 2020Filed: Jun 16, 2023Published: Jan 18, 2024
Est. expiryDec 16, 2040(~14.4 yrs left)· nominal 20-yr term from priority
Inventors:Mingxin HuangShien-Ping Feng
H10W 72/07341H10W 72/07332H10W 72/07232H10W 72/352H10W 72/252H10W 72/072H10W 72/20H10W 72/07331H10W 72/073H10W 72/01371H10W 72/07311H10W 80/314H10W 72/241H10W 72/016H10W 72/01271H10W 80/312H10W 72/01335H10W 90/722H10W 72/01235H10W 90/732H10W 72/90H10W 72/013H10W 72/012H10W 72/30H01L 24/81H01L 2224/81447H01L 2224/81203H01L 2924/20104
61
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Claims

Abstract

Disclosed is a method of bonding two copper structures involving compressing a first copper structure with a second copper structure under a stress from 0.1 MPa to 50 MPa and under a temperature of 250° C. or less so that a bonding surface of the first copper structure is bonded to the bonding surface of the second copper structure. At least one of the bonding surface of the first copper structure and the bonding surface of the second copper structure have a layer of nanograins of copper having an average grain size of 5 nm to 500 nm. The layer of the nanograins of copper having a thickness of 10 nm to 10 μm.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of bonding two copper structures, comprising:
 compressing a first copper structure with a second copper structure under a stress from 0.1 MPa to 50 MPa and under a temperature from 100° C. to 250° C. so that a bonding surface of the first copper structure is bonded to a bonding surface of the second copper structure;   at least one of the bonding surface of the first copper structure and the bonding surface of the second copper structure having thereon a layer of nanograins of copper with an average grain size of 5 nm to 500 nm, the layer of the nanograins of copper having a thickness of 10 nm to 10 μm.   
     
     
         2 . The method according to  claim 1 , wherein both the bonding surface of the first copper structure and the bonding surface of the second copper structure have a layer of nanograins of copper having an average grain size of 5 nm to 500 nm, the layer of the nanograins of copper having a thickness of 10 nm to 10 μm. 
     
     
         3 . The method according to  claim 1 , wherein the nanograins of copper have an average grain size of 10 nm to 250 nm. 
     
     
         4 . The method according to  claim 2 , wherein the nanograins of copper have an average grain size of 10 nm to 250 nm. 
     
     
         5 . The method according to  claim 1 , wherein the nanograins of copper have an average grain size of 10 nm to 250 nm. 
     
     
         6 . The method according to  claim 2 , wherein the nanograins of copper have an average grain size of 15 nm to 100 nm. 
     
     
         7 . The method according to  claim 1 , wherein the first copper structure and the second copper structure are compressed under a stress from 1 MPa to 20 MPa. 
     
     
         8 . The method according to  claim 1 , wherein the first copper structure and the second copper structure are compressed under a temperature from 120° C. to 200° C. 
     
     
         9 . The method according to  claim 1 , wherein the first copper structure and the second copper structure are compressed for a time from 0.5 to 60 minutes. 
     
     
         10 . The method according to  claim 1 , wherein a CMP process associated with the method of bonding the two copper structures is not conducted. 
     
     
         11 . A method of bonding two copper structures within a 5G chipset, comprising:
 compressing a first copper structure within a wireless chipset with a second copper structure within the wireless chipset under a stress from 0.1 MPa to 50 MPa and under a temperature from 100° C. to 250° C. so that a bonding surface of the first copper structure is bonded to a bonding surface of the second copper structure;   at least one of the bonding surface of the first copper structure and the bonding surface of the second copper structure have a layer of nanograins of copper with an average grain size of 5 nm to 500 nm, the layer of the nanograins of copper having a thickness of 10 nm to 10 μm.   
     
     
         12 . The method according to  claim 11 , wherein both of the bonding surface of the first copper structure and the bonding surface of the second copper structure have a layer of nanograins of copper having an average grain size of 5 nm to 500 nm and the layer of the nanograins of copper having a thickness of 10 nm to 10 μm. 
     
     
         13 . The method according to  claim 11 , wherein the nanograins of copper have an average grain size of 10 nm to 250 nm. 
     
     
         14 . The method according to  claim 12 , wherein the nanograins of copper have an average grain size of 10 nm to 250 nm. 
     
     
         15 . The method according to  claim 11 , wherein the nanograins of copper have an average grain size of 10 nm to 250 nm. 
     
     
         16 . The method according to  claim 12 , wherein the nanograins of copper have an average grain size of 15 nm to 100 nm. 
     
     
         17 . The method according to  claim 11 , wherein the first copper structure and the second copper structure are compressed under a stress from 1 MPa to 20 MPa. 
     
     
         18 . The method according to  claim 11 , wherein the first copper structure and the second copper structure are compressed under a temperature from 120° C. to 200° C. 
     
     
         19 . The method according to  claim 11 , wherein the first copper structure and the second copper structure are compressed for a time from 0.5 to 60 minutes. 
     
     
         20 . The method according to  claim 11 , with the proviso that a CMP process associated with the method of bonding two copper structures is not conducted.

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