US2024021541A1PendingUtilityA1

Semiconductor device and method of manufacturing the same

Assignee: RENESAS ELECTRONICS CORPPriority: Apr 14, 2014Filed: Sep 29, 2023Published: Jan 18, 2024
Est. expiryApr 14, 2034(~7.7 yrs left)· nominal 20-yr term from priority
H10P 74/273H10P 74/203H10P 54/00H10W 90/756H10W 74/147H10W 74/00H10W 72/9445H10W 72/9415H10W 72/07552H10W 72/5522H10W 72/983H10W 72/932H10W 72/537H10W 72/59H10W 46/607H10W 74/129H10W 74/016H10W 72/90H10W 72/50H10W 72/019H10W 70/481H10W 70/465H10W 70/411H10W 70/041H10W 46/00H10W 42/121H01L 23/562H01L 24/09H01L 24/03H01L 24/46H01L 24/05H01L 23/3114H01L 24/06H01L 21/4825H01L 21/565H01L 21/78H01L 22/12H01L 23/49503H01L 23/4952H01L 23/49562H01L 23/544H01L 2224/04042H01L 2224/4905H01L 22/32H01L 24/02H01L 23/3192H01L 2224/05552H01L 2224/05567H01L 2224/06155H01L 2924/13091H01L 24/45H01L 2224/06133H01L 2924/181H01L 2224/48091H01L 2224/48247H01L 2224/02166H01L 2224/05553H01L 2224/45144H01L 2223/54486
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Claims

Abstract

A semiconductor device with improved reliability is provided. The semiconductor device is characterized by its embodiments in that sloped portions are formed on connection parts between a pad and a lead-out wiring portion, respectively. This feature suppresses crack formation in a coating area where a part of the pad is covered with a surface protective film.

Claims

exact text as granted — not AI-modified
1 - 20 . (canceled) 
     
     
         21 . A semiconductor device comprising:
 a plurality of pads arranged along an edge side of a semiconductor chip; and   a lead-out wiring portion provided on each of the pads,   wherein the plurality of pads include:
 a plurality of outer pads disposed along the edge side; and 
 a plurality of inner pads disposed along the edge side and located farther from the edge side than the outer pads.

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