By-site-comensated etch back for local planarization/topography adjustment

Abstract

A work piece is positioned on a work piece support, which includes a plurality of temperature control zones. A pre-etch surface topography is determined by measuring a plurality of pre-etch surface heights or thicknesses at a plurality of sites on the work piece. The plurality of sites correspond to the plurality of temperature control zones on the work piece support. At least a first zone of the temperature control zones is heated or cooled based on the measured plurality of pre-etch surface heights or thicknesses, so that the first zone has a first temperature different from a second temperature of a second zone of the temperature control zones. A dry etch is carried out while the first zone has the first temperature different from the second temperature of the second zone of the temperature control zones.

1 - 12 . (canceled) 
     
     
         13 . An etching system comprising:
 a measurement apparatus configured to receive a work piece, wherein the measurement apparatus is configured to determine a plurality of pre-etch surface heights at a plurality of sites on an upper surface of the work piece;   a localized etch back apparatus downstream of the measurement apparatus and configured to etch back the upper surface of the work piece to thin the work piece, the localized etch back apparatus comprising:
 a work piece support configured to support the work piece, wherein a face of the work piece support includes a plurality of temperature control zones with a plurality of temperature control elements, respectively; and 
 a plasma source configured to generate ions to etch the work piece while the work piece is supported on the work piece support. 
   
     
     
         14 . The etching system of  claim 13 , further comprising:
 a controller configured to individually heat or cool the plurality of temperature control elements to heat or cool the plurality of temperature control zones, to a first plurality of temperatures, while the plasma source generates the ions to etch the work piece, wherein the first plurality of temperatures are based on the measured plurality of pre-etch surface heights.   
     
     
         15 . The etching system of  claim 14 , wherein the work piece support comprises a generally planar surface whereon the work piece resides. 
     
     
         16 . The etching system of  claim 15 , wherein the generally planar surface contacts an entirety of a backside surface of the work piece. 
     
     
         17 . The etching system of  claim 14 , further comprising one or more temperature sensors, wherein the one or more temperature sensors are configured to measure a temperature of the work piece at a respective location associated with each of the plurality of temperature control elements. 
     
     
         18 . The etching system of  claim 14 , wherein the plurality of temperature control elements are configured to heat some temperature control zones of the plurality of temperature control zones while concurrently cooling other temperature control zones of the plurality of temperature control zones. 
     
     
         19 . The etching system of  claim 14 , further comprising:
 a nozzle configured to be positioned over a site of the plurality of sites based on the surface height of that site; and   a dispensing system configured to dispense a liquid etchant through the nozzle to etch the site while other sites of the plurality of sites are free from the liquid etchant.   
     
     
         20 . A semiconductor device, comprising:
 a first integrated circuit structure including a first semiconductor substrate and a first interconnect structure, the first interconnect structure includes a dielectric structure, and a plurality of metal lines stacked over one another and connected to one another through contacts and vias in the first interconnect structure;   a second integrated circuit structure including a second interconnect structure disposed over the first interconnect structure, and a second semiconductor substrate disposed over the second interconnect structure; and   wherein the second semiconductor substrate has a total thickness ranging from approximately 0.5 microns to approximately 9 microns, and a total thickness variation or height variation being less than 0.3 microns and greater than 100 angstroms.   
     
     
         21 . An etching system, comprising:
 a work piece support configured to support a work piece, wherein a face of the work piece support includes a plurality of temperature control zones;   a measurement apparatus configured to determine a pre-etch surface topography for the work piece by measuring a plurality of pre-etch surface heights or thicknesses at a plurality of sites on the work piece, wherein the plurality of sites on the work piece correspond to the plurality of temperature control zones on the face of the work piece support;   a controller configured to heat a first zone of the temperature control zones based on the measured plurality of pre-etch surface heights or thicknesses and concurrently cool a second zone of the temperature control zones based on the measured plurality of pre-etch surface heights or thicknesses, such that the first zone has a first temperature different from a second temperature of the second zone; and   wherein the controller is configured to carry out a first dry etch while the first zone has the first temperature different from the second temperature of the second zone of the temperature control zones.   
     
     
         22 . The etching system of  claim 21 , wherein multiple zones of the plurality of temperature control zones are heated while other multiple zones of the plurality of temperature control zones are cooled during the first dry etch. 
     
     
         23 . The etching system of  claim 21 ,
 wherein the measurement apparatus is further configured to determine a post-etch surface topography for the work piece by measuring a plurality of post-etch surface heights at the plurality of sites on the work piece.   
     
     
         24 . The etching system of  claim 23 ,
 wherein the measurement apparatus is further configured to determine whether a plurality of measured post-etch surface heights in the post-etch surface topography fall within a predetermined acceptable range; and   when the plurality of measured post-etch surface heights in the post-etch surface topography fall outside the predetermined acceptable range, then the controller is configured to heat and cool the plurality of temperature control zones, respectively, to a second plurality of temperatures, respectively, wherein the second plurality of temperatures are based on the measured plurality of post-etch surface heights, respectively, and carrying out a second dry etch while the plurality of temperature control zones are at the second plurality of temperatures, respectively.   
     
     
         25 . The etching system of  claim 21 ,
 wherein the controller is configured to, prior to determining the pre-etch surface topography for the work piece, induce removal of at least 95% of an initial thickness of the work piece to provide the work piece with a reduced thickness of between 2 micrometers and 10 micrometers, wherein the work piece with the reduced thickness includes the pre-etch surface topography whereby a total height or thickness variation of the work piece ranges between 0.1 micrometers and 0.5 micrometers.   
     
     
         26 . The etching system of  claim 21 , wherein the work piece is a part of a three-dimensional integrated circuit including at least two semiconductor substrates. 
     
     
         27 . The etching system of  claim 21 , further comprising:
 a nozzle configured to be positioned over a first site of the plurality of sites based on a surface height of the first site, the nozzle configured to dispense a liquid etchant to etch the first site while some of the plurality of sites are free from the liquid etchant.   
     
     
         28 . The etching system of  claim 21 , wherein the controller is configured to heat and cool the plurality of temperature control zones by predicting a temperature distribution of the work piece at the plurality of sites based on heating or cooling. 
     
     
         29 . The etching system of  claim 21 :
 wherein the pre-etch surface topography includes a first site having a first height and a second site having a second height on one side of the first site, the first height being greater than the second height; and   wherein the first dry etch reduces the first height of the first site to a third height and reduces the second height of the second site to a fourth height, wherein the third height is less than the fourth height.   
     
     
         30 . The etching system of  claim 29 ,
 wherein the controller is configured to carry out a second dry etch after the first dry etch to provide an etched-back surface topography of substantially uniform height; and   wherein each of the first site and the second site has a fifth height in the etched-back surface topography and where the fifth height is less than the third height.   
     
     
         31 . The etching system of  claim 21 , wherein the work piece has a total thickness ranging from approximately 0.5 microns to approximately 9 microns, and a total thickness variation or height variation being less than 0.3 microns and greater than 100 angstroms. 
     
     
         32 . The etching system of  claim 21 , wherein the work piece is a semiconductor wafer.