Semiconductor device and method for manufacturing semiconductor device

Abstract

A semiconductor device includes a channel filling a through via hole and including an oxide semiconductor; a first electrode disposed on the channel and formed of a conductive oxide; and a second electrode disposed on the first electrode and formed of a metal.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a channel filling a through via hole and including an oxide semiconductor;   a first electrode disposed on the channel and formed of a conductive oxide; and   a second electrode disposed on the first electrode and formed of a metal.   
     
     
         2 . The semiconductor device according to  claim 1 , further comprising:
 an insulating film disposed around the first electrode, including the conductive oxide, and having insulating properties.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein the first electrode and the insulating film are disposed in one layer. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the first electrode has higher oxygen permeability than the second electrode. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein the first electrode and the insulating film have higher oxygen permeability than the second electrode. 
     
     
         6 . The semiconductor device according to  claim 2 , wherein the conductive oxide includes O, In, and Sn, and the insulating film further includes at least one element selected from Mg, V, Cr, Mn, Fe, Co, Ni, and Bi. 
     
     
         7 . The semiconductor device according to  claim 1 , further comprising:
 a semiconductor substrate; and   a capacitor disposed on the semiconductor substrate and electrically connected to the channel.   
     
     
         8 . The semiconductor device according to  claim 7 , further comprising:
 an insulating film disposed around the channel;   a control electrode configured to generate an electric field in the channel; and   a semiconductor element disposed on the semiconductor substrate and electrically connected to the control electrode.   
     
     
         9 . A method for manufacturing a semiconductor device comprising:
 forming, in a first through via hole extending through an insulating layer, a first channel including a first oxide semiconductor;   forming, in a second through via hole also extending through the insulating layer, a second channel including a second oxide semiconductor;   forming, over the insulating layer, a conductive film including a conductive oxide;   doping, with a metal, at least one region of the conductive film that does not overlay the first channel and the second channel; and   annealing the doped conductive film under oxygen.   
     
     
         10 . The method for manufacturing a semiconductor device according to  claim 9 , wherein the step of doping at least one region of the conductive film includes electrically insulating the first channel from the second channel. 
     
     
         11 . The method for manufacturing a semiconductor device according to  claim 9 , wherein the metal is selected from a group consisting of: Mg, V, Cr, Mn, Fe, Co, Ni, Bi, and combinations thereof. 
     
     
         12 . The method for manufacturing a semiconductor device according to  claim 9 , wherein the conductive oxide includes indium tin oxide. 
     
     
         13 . The method for manufacturing a semiconductor device according to  claim 9 , prior to doping at least one region of the conductive film, further comprising:
 overlaying a first region of the conductive film directly above the first channel with at least a first landing pad;   overlaying a second region of the conductive film directly above the second channel with at least a second landing pad;   covering sidewalls and a top surface of the first landing pad; and   covering sidewalls and a top surface of the second landing pad.   
     
     
         14 . The method for manufacturing a semiconductor device according to  claim 13 , wherein the at least one doped region is different from the first or second region.