Solid-state imaging element and electronic device

Abstract

A solid-state imaging element that includes a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit, a reset transistor that selectively applies a reset voltage to the charge accumulation unit, an amplification transistor having a gate electrode being electrically connected to the charge accumulation unit, and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes a first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor, a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring, and a third wiring electrically connecting the amplification transistor and the selection transistor.

What is claimed is: 
     
         1 . A light detecting device, comprising:
 a photoelectric conversion portion;   a charge accumulation portion configured to accumulate a charge photoelectrically converted by the photoelectric conversion portion;   an amplification transistor having a gate electrode electrically connected to the charge accumulation portion by at least a first wiring comprising a first portion;   a selection transistor connected to the amplification transistor; and   a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor,
 wherein the second wiring comprises a second portion, and 
 wherein:
 the first portion is along the second portion, or 
 in a plan view, the first portion overlaps the second portion. 
 
   
     
     
         2 . The light detecting device according to  claim 1 , wherein
 the photoelectric conversion portion comprises:
 a first electrode; 
 a second electrode; and 
 a photoelectric conversion layer between the first electrode and the second electrode, wherein
 one of the first electrode or the second electrode is electrically connected to the charge accumulation portion. 
 
   
     
     
         3 . The light detecting device according to  claim 1 , further comprising a reset transistor configured to selectively apply a reset voltage to the charge accumulation portion,
 wherein, in a case where the charge accumulation portion is further configured to accumulate holes, the reset voltage is at a GND level.   
     
     
         4 . The light detecting device according to  claim 3 ,
 wherein, in a case where the charge accumulation portion is further configured to accumulate electrons, the reset voltage is one of a power supply voltage or a boosted voltage having a voltage value higher than the power supply voltage.   
     
     
         5 . The light detecting device according to  claim 3 , wherein
 the reset transistor includes a first electrode and a second electrode,   the first electrode is connected to the charge accumulation portion, and   the second electrode is connected to ground.   
     
     
         6 . The light detecting device according to  claim 1 , wherein the first wiring is parallel to the second wiring in different wiring layers. 
     
     
         7 . The light detecting device according to  claim 1 , further comprising a third wiring configured to electrically connect the amplification transistor and the selection transistor, wherein
 a wiring material of the first wiring is different from a wiring material of the second wiring, and   the third wiring includes a wiring material different from the wiring material of both the first wiring and the second wiring.   
     
     
         8 . The light detecting device according to  claim 7 , wherein each of the first wiring, the second wiring, and the third wiring includes a metal wiring. 
     
     
         9 . The light detecting device according to  claim 7 , wherein the third wiring is further configured to electrically connect a source region of the amplification transistor with a drain region of the selection transistor. 
     
     
         10 . The light detecting device according to  claim 1 , further comprising a semiconductor substrate on which pixels are formed,
 wherein at least two photoelectric conversion regions are stacked in a light incident direction in the semiconductor substrate.   
     
     
         11 . The light detecting device according to  claim 1 , further comprising a pixel, wherein the pixel has a back-illuminated pixel structure. 
     
     
         12 . The light detecting device according to  claim 1 , further comprising a vertical signal line connected to the selection transistor. 
     
     
         13 . The light detecting device according to  claim 1 , wherein the selection transistor is connected in series with the amplification transistor.