Resist underlayer film-forming composition containing amide solvent

Abstract

A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R 1 , R 2 , and R 3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R 1 , R 2 , and R 3 may be the same or different and may bond to each other to form a ring structure.

1 . A method for producing a resist underlayer film, comprising
 coating a resist underlayer film-forming composition on a semiconductor substrate and   baking;   the resist underlayer film-forming composition comprising a polymer and a compound represented by Formula (1) as a solvent:   
       
         
           
           
               
               
           
         
         wherein, R 1 , R 2 , and R 3  in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R 1 , R 2 , and R 3  may be the same or different and may bond to each other to form a ring structure. 
       
     
     
         2 . A method for producing a semiconductor device, comprising
 forming a resist underlayer film on a semiconductor substrate with a resist underlayer film-forming composition; forming a resist film thereon;   forming a resist pattern by irradiation with light or electron beam and development;   etching the underlayer film with the resist pattern; and   processing the semiconductor substrate by the patterned underlayer film;   the resist underlayer film-forming composition comprising a polymer and a compound represented by Formula (1) as a solvent:   
       
         
           
           
               
               
           
         
         wherein, R 1 , R 2 , and R 3  in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R 1 , R 2 , and R 3  may be the same or different and may bond to each other to form a ring structure. 
       
     
     
         3 . A method for producing a semiconductor device, comprising
 forming a resist underlayer film on a semiconductor substrate with a resist underlayer film-forming composition;   forming an inorganic resist underlayer film thereon;   forming a resist film further thereon;   forming a resist pattern by irradiation with light or electron beam and development;   etching the inorganic resist underlayer film with the resist pattern;   etching the underlayer film by the patterned inorganic resist underlayer film; and   processing the semiconductor substrate with the patterned resist underlayer film;   the resist underlayer film-forming composition comprising a polymer and a compound represented by Formula (1) as a solvent:   
       
         
           
           
               
               
           
         
         wherein, R 1 , R 2 , and R 3  in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R 1 , R 2 , and R 3  may be the same or different and may bond to each other to form a ring structure. 
       
     
     
         4 . A method for producing a resist pattern, comprising
 forming a resist underlayer film on a semiconductor substrate with a resist underlayer film-forming composition; forming a resist film thereon; and   forming a resist pattern by irradiation with light or electron beam and development;   the resist underlayer film-forming composition comprising a polymer and a compound represented by Formula (1) as a solvent:   
       
         
           
           
               
               
           
         
         wherein, R 1 , R 2 , and R 3  in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R 1 , R 2 , and R 3  may be the same or different and may bond to each other to form a ring structure. 
       
     
     
         5 . The method according to  claim 1 , wherein the step of forming the inorganic resist underlayer film is performed by vapor deposition of an inorganic substance. 
     
     
         6 . The method according to  claim 2 , wherein the step of forming the inorganic resist underlayer film is performed by vapor deposition of an inorganic substance. 
     
     
         7 . The method according to  claim 3 , wherein the step of forming the inorganic resist underlayer film is performed by vapor deposition of an inorganic substance. 
     
     
         8 . The method according to  claim 4 , wherein the step of forming the inorganic resist underlayer film is performed by vapor deposition of an inorganic substance. 
     
     
         9 . The method for producing the resist underlayer film according to  claim 5 , wherein the semiconductor substrate has a part having a step and a part having no step, and a step (iso-dense bias) between the resist underlayer film coated on the part having a step and the part having no step ranges from 3 to 50 nm. 
     
     
         10 . The method for producing the resist underlayer film according to  claim 6 , wherein the semiconductor substrate has a part having a step and a part having no step, and a step (iso-dense bias) between the resist underlayer film coated on the part having a step and the part having no step ranges from 3 to 50 nm. 
     
     
         11 . The method for producing the resist underlayer film according to  claim 7 , wherein the semiconductor substrate has a part having a step and a part having no step, and a step (iso-dense bias) between the resist underlayer film coated on the part having a step and the part having no step ranges from 3 to 50 nm. 
     
     
         12 . The method for producing the resist underlayer film according to  claim 8 , wherein the semiconductor substrate has a part having a step and a part having no step, and a step (iso-dense bias) between the resist underlayer film coated on the part having a step and the part having no step ranges from 3 to 50 nm. 
     
     
         13 . A method for producing a resist underlayer film comprising the step of forming an inorganic resist underlayer film after the production of the resist underlayer film according to  claim 1 . 
     
     
         14 . A method for producing a resist underlayer film comprising the step of forming an inorganic resist underlayer film after the production of the resist underlayer film according to  claim 2 . 
     
     
         15 . A method for producing a resist underlayer film comprising the step of forming an inorganic resist underlayer film after the production of the resist underlayer film according to  claim 3 . 
     
     
         16 . A method for producing a resist underlayer film comprising the step of forming an inorganic resist underlayer film after the production of the resist underlayer film according to  claim 4 .