Substrate processing method, component processing method, and substrate processing apparatus

Abstract

A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.

What is claimed is: 
     
         1 . A substrate processing method comprising:
 (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus;   (b) supplying a processing gas including hydrogen fluoride gas into the chamber;   (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and   (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure,   wherein in a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.   
     
     
         2 . The substrate processing method according to  claim 1 , wherein in the graph, the first region is positioned below a saturated vapor pressure curve of hydrogen fluoride. 
     
     
         3 . The substrate processing method according to  claim 1 , wherein the first temperature and the second temperature are in a range of −140° C. or higher and 0° C. or lower, and the first pressure and the second pressure are in a range of 1 Pa or more and 1×10 5  Pa or less. 
     
     
         4 . The substrate processing method according to  claim 1 , wherein the substrate includes a silicon-containing film. 
     
     
         5 . The substrate processing method according to  claim 1 , wherein the substrate includes a metal-containing film. 
     
     
         6 . The substrate processing method according to  claim 1 , wherein in (c), a substance is produced from the substrate processing apparatus adheres to a surface of the substrate. 
     
     
         7 . The substrate processing method according to  claim 1 , wherein the processing gas includes an inert gas. 
     
     
         8 . A substrate processing apparatus comprising:
 a chamber;   a substrate support configured to support a substrate in the chamber;   a gas supply configured to supply a processing gas including hydrogen fluoride gas into the chamber; and   a controller configured to control the substrate processing apparatus,   wherein the controller is configured to   control a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and   control the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure, and   in a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.   
     
     
         9 . A substrate processing method comprising:
 (a) providing a substrate including a base film and a mask provided on the base film, the mask having an opening therein;   (b) etching the base film using plasma; and   (c) supplying hydrogen fluoride to the mask, thereby removing a deposit adhering to the opening of the mask in (b).   
     
     
         10 . The substrate processing method according to  claim 9 , wherein in (c), hydrogen fluoride gas is supplied without generating plasma. 
     
     
         11 . The substrate processing method according to  claim 9 , wherein in (c), hydrofluoric acid is supplied. 
     
     
         12 . The substrate processing method according to  claim 9 , further comprising:
 (d) after (c), etching the base film using plasma.   
     
     
         13 . The substrate processing method according to  claim 12 , further comprising:
 (e) after (d), supplying hydrogen fluoride to the mask, thereby removing the deposit adhering to the opening of the mask in (d).   
     
     
         14 . The substrate processing method according to  claim 9 , wherein the mask contains silicon. 
     
     
         15 . The substrate processing method according to  claim 9 , wherein the base film contains carbon.