Tungsten Film-Forming Method, Film-Forming System and Storage Medium

Abstract

There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

1 - 12 . (canceled) 
     
     
         13 . A tungsten film-forming method, comprising:
 forming a silicon film on a substrate by alternately supplying a silicon-containing gas and a B 2 H 6  gas to the substrate; and   forming a tungsten film on the silicon film by supplying a tungsten-containing gas to the substrate,   wherein the silicon-containing gas is SiH 4  or DCS.   
     
     
         14 . The tungsten film-forming method of  claim 13 , wherein the silicon film contains boron. 
     
     
         15 . The tungsten film-forming method of  claim 13 , wherein the forming the silicon film and the forming the tungsten film are performed in different processing containers among one or more processing containers. 
     
     
         16 . The tungsten film-forming method of  claim 13 , wherein the forming the silicon film and the forming the tungsten film are performed in a same processing container among one or more processing containers.