Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting element

Abstract

A nitride semiconductor light-emitting element includes a light-emitting layer comprising a well layer comprising AlGaN and emitting ultraviolet light; an electron blocking layer being located on the light-emitting layer and comprising AlGaN with a first Al composition ratio higher than an Al composition ratio of the well layer; and a p-type cladding layer being located on the electron blocking layer, comprising AlGaN with a second Al composition ratio higher than the Al composition ratio of the well layer and lower than the first Al composition ratio, and being doped with a predetermined concentration of a p-type dopant. An interface between the electron blocking layer and the p-type cladding layer is doped with not less than a predetermined amount of an n-type dopant.

What is claimed is: 
     
         1 . A method for manufacturing a nitride semiconductor light-emitting element, comprising:
 forming a light-emitting layer comprising a well layer comprising AlGaN and emitting ultraviolet light;   forming, on the light-emitting layer, an electron blocking layer comprising AlGaN with a first Al composition ratio higher than an Al composition ratio of the well layer;   intermittently supplying an n-type dopant and a p-type dopant onto an upper surface of the electron blocking layer; and   forming, on the electron blocking layer, a p-type cladding layer comprising AlGaN with a second Al composition ratio higher than the Al composition ratio of the well layer and lower than the first Al composition ratio and being doped with a predetermined concentration of a p-type dopant.