Radiation sensor element and method

Abstract

This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.

1 . A radiation sensor element comprising a semiconductor substrate, having bulk majority charge carriers of a first polarity, a bulk refractive index, a front surface, defining a front side of the semiconductor substrate, and a back surface, arranged opposite the front surface and extending substantially along a base plane;
 the radiation sensor element comprising a plurality of pixel portions, each pixel portion of the plurality of pixel portions comprising a collection region on the back surface for collecting free charge carriers of a second polarity opposite in sign to the first polarity;   wherein each pixel portion of the plurality of pixel portions comprises a textured region on the front surface, the textured region comprising high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate;   the radiation sensor element comprises an intermediate portion between two pixel portions of the plurality of pixel portions, the intermediate portion comprising an intermediate region on the front surface with a root mean square, RMS, roughness lower than a RMS roughness of a textured region of either of the two pixel portions.   
     
     
         2 . A radiation sensor element according to  claim 1 , wherein the RMS roughness of the intermediate region is less than or equal to 0.2 times a RMS roughness of a textured region of either of the two pixel portions. 
     
     
         3 . A radiation sensor element according to  claim 1 , wherein the intermediate region extends substantially parallel to the base plane. 
     
     
         4 . A radiation sensor element according to  claim 1 , comprising a metal coating on the front side of the semiconductor substrate, a projection of the metal coating on the base plane intersecting a projection of the intermediate region on the base plane. 
     
     
         5 . A radiation sensor element according to  claim 1 , wherein the semiconductor substrate and the high aspect ratio nanostructures are formed of silicon, Si. 
     
     
         6 . A radiation sensor element according to  claim 1 , wherein the radiation sensor element comprises dielectric material conformally coating the high aspect ratio nanostructures. 
     
     
         7 . A radiation sensor element according to  claim 6 , wherein the dielectric material has a net charge of the second polarity. 
     
     
         8 . A radiation sensor element according to  claim 1 , wherein the collection region is defined by a collection doping well with majority charge carriers of the second polarity. 
     
     
         9 . A method for fabricating a radiation sensor element comprising a plurality of pixel portions, the method comprising:
 providing a semiconductor substrate, having bulk majority charge carriers of a first polarity, a bulk refractive index, a front surface, defining a front side of the semiconductor substrate, and a back surface, arranged opposite the front surface and extending substantially along a base plane;   for each pixel portion of the plurality of pixel portions, forming a collection region on the back surface for collecting free charge carriers of a second polarity opposite in sign to the first polarity;   for each pixel portion of the plurality of pixel portions, forming a textured region ( 303 ) on the front surface, the textured region comprising high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate;   wherein an intermediate portion is formed between two pixel portions of the plurality of pixel portions, the intermediate portion comprising an intermediate region on the front surface with a root mean square, RMS, roughness lower than a RMS roughness of a textured region of either of the two pixel portions.   
     
     
         10 . A method according to  claim 9 , wherein the process of forming a textured region comprises a metal-assisted chemical etching, MACE, step, an atmospheric dry etching, ADE, step, and/or a reactive ion etching, RIE, step. 
     
     
         11 . A method according to  claim 9 , wherein the RMS roughness of the intermediate region is less than or equal to 0.2 times a RMS roughness of a textured region of either of the two pixel portions. 
     
     
         12 . A radiation sensor element according to  claim 1 , wherein the RMS roughness of the intermediate region is less than or equal to 0.1 times a RMS roughness of a textured region of either of the two pixel portions. 
     
     
         13 . A radiation sensor element according to  claim 1 , wherein the RMS roughness of the intermediate region is less than or equal to 0.05 times a RMS roughness of a textured region of either of the two pixel portions. 
     
     
         14 . A radiation sensor element according to  claim 1 , wherein the RMS roughness of the intermediate region is less than or equal to 0.01 times a RMS roughness of a textured region of either of the two pixel portions. 
     
     
         15 . A method according to  claim 9 , wherein the process of forming a textured region comprises a metal-assisted chemical etching, MACE, step, an atmospheric dry etching, ADE, step, and/or a deep reactive ion etching, DRIE, step. 
     
     
         16 . A method according to  claim 9 , wherein the RMS roughness of the intermediate region is less than or equal to 0.1 times a RMS roughness of a textured region of either of the two pixel portions. 
     
     
         17 . A method according to  claim 9 , wherein the RMS roughness of the intermediate region is less than or equal to 0.05 times a RMS roughness of a textured region of either of the two pixel portions. 
     
     
         18 . A method according to  claim 9 , wherein the RMS roughness of the intermediate region is less than or equal to 0.01 times a RMS roughness of a textured region of either of the two pixel portions.