Image sensor

Abstract

An image sensor includes a pixel array including a plurality of pixels arranged in a first direction and a second direction. Each pixel of the plurality of pixels includes a plurality of photodiodes disposed adjacent to one another in at least one of the first direction and the second direction. The image sensor further includes a control logic configured to generate image data by obtaining pixel signals from the plurality of pixels, and read a pixel voltage corresponding to charges generated by two or more of the plurality of photodiodes included in one of the plurality of pixels, at substantially the same time.

What is claimed is: 
     
         1 . An image sensor, comprising:
 a pixel array comprising a plurality of pixels; and   a control logic configured to generate image data using charges generated in each of the plurality of pixels,   wherein each of the plurality of pixels comprises a plurality of photodiodes formed at about a same depth in a semiconductor substrate, a pixel circuit below the plurality of photodiodes, and a device connection layer that physically connects at least portions of the plurality of photodiodes to each other and being disposed between the pixel circuit and the plurality of photodiodes.   
     
     
         2 . The image sensor of  claim 1 , wherein each of the plurality of pixels comprises a first photodiode, a second photodiode, a third photodiode and a fourth photodiode. 
     
     
         3 . The image sensor of  claim 2 , wherein the device connection layer comprises:
 a first device connection layer that physically connects the first photodiode and the second photodiode to each other; and   a second device connection layer that physically connects the third photodiode and the fourth photodiode to each other.   
     
     
         4 . The image sensor of  claim 2 , wherein the device connection layer physically connects three photodiodes among the first to fourth photodiodes to each other. 
     
     
         5 . The image sensor of  claim 1 , wherein at least one of the plurality of pixels comprises a charge transfer layer formed between at least a portion of the plurality of photodiodes,
 wherein the charge transfer layer provides a transfer path for the charges.   
     
     
         6 . The image sensor of  claim 1 , wherein each of the plurality of pixels comprises:
 a floating diffusion region that accumulates at least a portion of the charges generated by the plurality of photodiodes; and   a plurality of transfer transistors connected between the floating diffusion region and the plurality of photodiodes,   wherein a number of the plurality of photodiodes is greater than a number of the plurality of transfer transistors.   
     
     
         7 . An image sensor, comprising:
 a pixel array comprising a plurality of pixels; and   a control logic circuit configured to generate image data using charges generated in each of the plurality of pixels,   wherein each of the plurality of pixels comprises:   a plurality of photodiodes formed at about a same depth in a semiconductor substrate;   a plurality of transfer transistors connected to the plurality of photodiodes; and   a connection line that connects gate electrode layers of at least a portion of transfer transistors among the plurality of transfer transistors to each other.   
     
     
         8 . The image sensor of  claim 7 , wherein the connection line comprises a first connection line and a second connection line. 
     
     
         9 . The image sensor of  claim 8 , wherein, in a first pixel and a second pixel adjacent to each other among the plurality of pixels, the first connection line of the first pixel is connected to the first connection line of the second pixel, and the second connection line of the first pixel is connected to the second connection line of the second pixel. 
     
     
         10 . The image sensor of  claim 7 , wherein the plurality of pixels comprises a first pixel and a second pixel disposed adjacent to each other, the connection line of the first pixel extends in a first direction, and the connection line of the second pixel extends in a second direction intersecting the first direction. 
     
     
         11 . The image sensor of  claim 7 , wherein a number of the plurality of photodiodes is equal to a number of the plurality of transfer transistors.