Integrated method and tool for high quality selective silicon nitride deposition

Abstract

Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying the silicon-containing dielectric layer. The processing method is performed in a processing tool without breaking vacuum.

What is claimed is: 
     
         1 . A processing method to form a logic or memory device, the processing method comprising:
 pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack;   exposing the top surface of the film stack to a growth inhibitor;   selectively depositing a silicon-containing dielectric layer in a region of the film stack; and   densifying the silicon-containing dielectric layer,   wherein the processing method is performed in a processing tool without breaking vacuum.   
     
     
         2 . The processing method of  claim 1 , wherein the second material layer comprises an oxide layer. 
     
     
         3 . The processing method of  claim 1 , wherein the region is a recessed region formed by recessing the first material layer relative to the second material layer through the memory hole. 
     
     
         4 . The processing method of  claim 1 , wherein the region is on a word line side of the film stack. 
     
     
         5 . The processing method of  claim 1 , wherein the first material layer comprises one or more of polysilicon, silicon nitride, silicon carbide, silicon carbonitride, germanium, and titanium nitride. 
     
     
         6 . The processing method of  claim 1 , further comprising oxidizing the silicon-containing dielectric layer. 
     
     
         7 . The processing method of  claim 1 , wherein the processing tool is selected from the group consisting of a single processing chamber and a batch processing chamber. 
     
     
         8 . The processing method of  claim 1 , further comprising:
 exposing the densified silicon-containing dielectric layer to a growth inhibitor;   selectively depositing a second silicon-containing dielectric layer in a region of the film stack; and   densifying the second silicon-containing dielectric layer.   
     
     
         9 . The processing method of  claim 1 , further comprising:
 selectively depositing a second silicon-containing dielectric layer in a region of the film stack; and   densifying the second silicon-containing dielectric layer.   
     
     
         10 . The processing method of  claim 1 , further comprising repeating the method. 
     
     
         11 . A processing method to form a logic or memory device, the processing method comprising:
 pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack;   selectively depositing a silicon-containing dielectric layer in a region of the film stack; and   densifying the silicon-containing dielectric layer,   wherein the processing method is performed in a processing tool without breaking vacuum.   
     
     
         12 . The processing method of  claim 11 , further comprising:
 pre-cleaning a top surface of the densified silicon-containing dielectric layer;   selectively depositing a second silicon-containing layer dielectric layer in a region of the film stack; and   densifying the second silicon-containing dielectric layer.   
     
     
         13 . The processing method of  claim 11 , further comprising:
 selectively depositing a second silicon-containing dielectric layer in a region of the film stack; and   densifying the second silicon-containing dielectric layer.   
     
     
         14 . A processing method to form a logic or memory device, the processing method comprising:
 pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack;   exposing the top surface of the film stack to a growth inhibitor;   selectively depositing a silicon-containing dielectric layer in a region of the film stack;   densifying the silicon-containing dielectric layer; and   optionally, repeating one or more of pre-cleaning the top surface of the film stack, exposing the top surface of the film stack to a growth inhibitor, selectively depositing a silicon-containing dielectric layer, and densifying the silicon-containing dielectric layer,   wherein the processing method is performed in a processing tool without breaking vacuum.