Process for manufacturing a two-dimensional film of hexagonal crystalline structure using epitaxial growth on a transferred thin metal film

Abstract

A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.

1 . A structure comprising successively a support substrate, a single-crystal metal film and a two-dimensional film of a group-IV material having a hexagonal crystal structure on the single-crystal metal film, wherein a difference between a coefficient of thermal expansion of the support substrate and a coefficient of thermal expansion of the two-dimensional film is smaller than a difference between a coefficient of thermal expansion of the single-crystal metal film and the coefficient of thermal expansion of the two-dimensional film. 
     
     
         2 . The structure of  claim 1 , wherein the single-crystal metal film is in the form of a plurality of blocks distributed over the surface of the support substrate. 
     
     
         3 . The structure of  claim 1 , wherein the two-dimensional film comprises one or more monoatomic layers. 
     
     
         4 . The structure of  claim 1 , wherein the two-dimensional film is a graphene film. 
     
     
         5 . The structure of  claim 1 , wherein the single-crystal metal film has a thickness of 1 μm or less. 
     
     
         6 . The structure of  claim 1 , wherein the single-crystal metal film has a thickness of 0.1 μm or less. 
     
     
         7 . The structure of  claim 1 , wherein the single-crystal metal film comprises at least one metal selected from among: nickel, copper, platinum, cobalt, chromium, iron, zinc, aluminum, iridium, ruthenium, and silver. 
     
     
         8 . The structure of  claim 1 , wherein the two-dimensional film is a silicene film, a germanene film, or a stanene film. 
     
     
         9 . The structure of  claim 1 , wherein the support substrate comprises a single-crystal material. 
     
     
         10 . The structure of  claim 1 , further comprising a barrier layer between the single-crystal metal film and the support substrate, the barrier layer configured to promote adhesion between the single-crystal metal film and the support substrate and/or prevent pollution of the two-dimensional film by a material of the support substrate. 
     
     
         11 . A structure, comprising:
 a support substrate;   a plurality of single-crystal metal blocks on the support substrate; and   a two-dimensional film of a group IV-material having a hexagonal structure on the plurality of single-crystal metal blocks.   
     
     
         12 . The structure of  claim 11 , wherein each of the single-crystal metal blocks is separated from one another. 
     
     
         13 . The structure of  claim 11 , wherein each of the single-crystal metal blocks has the same surface area as each of the other single-crystal metal blocks. 
     
     
         14 . The structure of  claim 11 , wherein the plurality of single-crystal metal blocks are arranged in a contiguous pattern on the support substrate. 
     
     
         15 . The structure of  claim 11 , wherein the support substrate and the plurality of single-crystal metal blocks each comprise nickel. 
     
     
         16 . A structure, comprising:
 a support substrate;   a single crystal metal-film on the support substrate;   a two-dimensional film of a group IV-material having a hexagonal crystal structure on the single crystal metal film; and   a removable interface disposed between the single-crystal metal film and the support substrate or buried within the support substrate.   
     
     
         17 . The structure of  claim 16 , wherein the removable interface comprises a region of material configured to confine a mechanical fraction, a selectively etchable layer, or an embrittlement zone in the support substrate. 
     
     
         18 . The structure of  claim 16 , wherein the removable interface is configured to be disassembled by one or more of application of mechanical stress, chemical attack, decomposition, fusion, and laser lift-off. 
     
     
         19 . The structure of  claim 16 , wherein a difference between a coefficient of thermal expansion of the support substrate and a coefficient of thermal expansion of the two-dimensional film is smaller than a difference between a coefficient of thermal expansion of the single-crystal metal film and the coefficient of thermal expansion of the two-dimensional film. 
     
     
         20 . The structure of  claim 16 , wherein the single-crystal metal film comprises nickel.