US2023412941A1PendingUtilityA1

Image sensor, image capturing system, and production method of image sensor

Assignee: SONY GROUP CORPPriority: Dec 15, 2015Filed: Aug 2, 2023Published: Dec 21, 2023
Est. expiryDec 15, 2035(~9.4 yrs left)· nominal 20-yr term from priority
Inventors:Atsushi Toda
H10W 90/732H10W 72/357H10W 72/353H10W 72/322H10F 39/199H10F 39/018H10F 39/014H10F 39/8067H10F 39/1847H10F 39/1825H10F 39/811H10F 39/809H10F 39/024H04N 25/705H01L 2924/05442H01L 27/14636H01L 27/14647H01L 27/14685G02B 5/208H01L 27/14634G02B 5/281G02B 5/201G01S 7/4816G01S 17/86G01S 17/931H04N 23/11G02B 5/26H01L 24/29H01L 24/32H01L 27/14652H01L 27/1469H01L 27/1464H01L 27/14689H01L 2224/2908H01L 2224/29188H01L 2224/30505H01L 2224/32145H01L 2924/05042H01L 2924/05341H01L 27/14629
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Claims

Abstract

There is provided an imaging device, an electronic apparatus including an imaging device, and an automotive vehicle including an electronic apparatus including an imaging device, including: a first substrate including a first set of photoelectric conversion units; a second substrate including a second set of photoelectric conversion units; and an insulating layer between the first substrate and the second substrate; where the insulating layer has a capability to reflect a first wavelength range of light and transmit a second wavelength range of light that is longer than the first wavelength range of light.

Claims

exact text as granted — not AI-modified
1 . An imaging device, comprising:
 a first pixel unit that converts light of a first wavelength range into a first charge;   a second pixel unit that converts light of a second wavelength range into a second charge; and   a layer,   wherein the first wavelength range includes a shorter wavelength than the second wavelength range,   wherein the layer is formed between the first pixel unit and the second pixel unit in a depth direction,   wherein the layer allows the light of the second wavelength to transmit through, and   wherein a first photoelectric conversion material used in the first pixel unit and a second photoelectric conversion material used in the second pixel unit are different from each other.   
     
     
         2 . The imaging device according to  claim 1 , wherein at least two second pixel units correspond to one first pixel unit. 
     
     
         3 . The imaging device according to  claim 1 , further comprising:
 a first wiring layer between the first pixel unit and the layer in the depth direction; and   a second wiring layer under the second pixel unit in the depth direction.   
     
     
         4 . The imaging device according to  claim 3 , wherein the first wiring layer includes a first wire electrically connected with a second wire of the second wiring layer by a through electrode. 
     
     
         5 . The imaging device according to  claim 1 , wherein the layer comprises a multilayer film. 
     
     
         6 . The imaging device according to  claim 3 , further comprising:
 an optical filter on top of the first pixel unit in the depth direction.   
     
     
         7 . The imaging device according to  claim 3 , further comprising:
 a semiconductor layer under the second wiring layer in the depth direction.   
     
     
         8 . The imaging device according to  claim 1 , wherein the light of the first wavelength range comprises visible light, and wherein the light of the second wavelength range comprises infrared light. 
     
     
         9 . The imaging device according to  claim 1 , further comprising:
 at least one of a logic circuit and a memory circuit.   
     
     
         10 . The imaging device according to  claim 1 , further comprising:
 a control unit that controls an overall drive state of the imaging device.   
     
     
         11 . The imaging device according to  claim 1 , wherein the first pixel unit is formed so as to extend under a plurality of light collection structural elements. 
     
     
         12 . The imaging device according to  claim 11 , wherein the plurality of light collection structural elements are on chip lenses. 
     
     
         13 . The imaging device according to  claim 1 , further comprising:
 a plurality of color filters formed above the first pixel unit, wherein the second pixel unit is formed so as to extend under the plurality of color filters.   
     
     
         14 . An electronic apparatus, comprising:
 an imaging device, comprising:
 a first pixel unit that converts light of a first wavelength range into a first charge; 
 a second pixel unit that converts light of a second wavelength range into a second charge; and 
 a layer, 
 wherein the first wavelength range includes a shorter wavelength than the second wavelength range, 
 wherein the layer is formed between the first pixel unit and the second pixel unit in a depth direction, 
 wherein the layer allows the light of the second wavelength to transmit through, and 
 wherein a first photoelectric conversion material used in the first pixel unit and a second photoelectric conversion material used in the second pixel unit are different from each other. 
   
     
     
         15 . The electronic apparatus according to  claim 14 , wherein at least two second pixel units correspond to one first pixel unit. 
     
     
         16 . The electronic apparatus according to  claim 14 , further comprising:
 a first wiring layer between the first pixel unit and the layer in the depth direction; and   a second wiring layer under the second pixel unit in the depth direction.   
     
     
         17 . The electronic apparatus according to  claim 16 , wherein the first wiring layer includes a first wire electrically connected with a second wire of the second wiring layer by a through electrode. 
     
     
         18 . The electronic apparatus according to  claim 14 , wherein the layer comprises a multilayer film. 
     
     
         19 . The electronic apparatus according to  claim 14 , further comprising:
 an optical filter on top of the first pixel unit in the depth direction.   
     
     
         20 . The electronic apparatus according to  claim 16 , further comprising:
 a semiconductor layer under the second wiring layer in the depth direction.

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