System for non radial temperature control for rotating substrates

Abstract

Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

1 . A method for substrate processing, comprising:
 rotating a substrate on a substrate support disposed in a processing volume of a processing chamber;   heating the substrate by directing energy towards the processing volume; and   sampling a sensor directed to a radial location at a frequency equal to or higher than a rotation frequency of substrate rotation to measure temperatures at a plurality of points at the radial location.   
     
     
         2 . The method of  claim 1 , wherein the measured temperatures are temperatures of at least one of the substrate or the substrate support, and the heating of the substrate comprises:
 directing non pulsed energy towards the processing volume from a heating source.   
     
     
         3 . The method of  claim 2 , wherein the heating source comprises a plurality of concentric zones that are each independently controllable. 
     
     
         4 . The method of  claim 2 , further comprising:
 directing pulsed energy towards the processing volume from one or more pulse heating elements, the pulsed energy having a frequency determined by a rotational speed of the substrate.   
     
     
         5 . The method of  claim 4 , wherein the one or more pulsed heating elements are a portion of a plurality of heating elements used to heat the substrate, and a remainder of the plurality of heating elements direct the non pulsed energy. 
     
     
         6 . The method of  claim 4 , wherein the one or more pulse heating elements are grouped in one or more azimuthally controlled zones. 
     
     
         7 . The method of  claim 4 , wherein the heating source comprises a plurality of heating elements grouped in a plurality of heating zones, the one or more pulse heating elements are grouped in one or more pulse heating zones, and each of the one or more pulse heating zones has a corresponding heating zone of the same radial coverage. 
     
     
         8 . The method of  claim 7 , wherein the heating zones and the one or more pulse heating zones form a circle with the one or more pulse heating zones occupying a section of the circle. 
     
     
         9 . The method of  claim 4 , further comprising:
 measuring temperatures of the substrate at a plurality of points at one or more radial locations; and   adjusting at least one of power level, frequency, phase, or amplitude of the one or more pulse heating elements according to the measured temperatures of the plurality of points along the radial location corresponding to the one or more pulsed heating elements.   
     
     
         10 . The method of  claim 9 , wherein the one or more pulse heating elements have the same frequency as the rotation frequency of substrate rotation, and the adjusting of the one or more pulse heating elements comprises striking a peak power level of the one or more pulse heating elements toward a point with a lowest temperature within each radial location. 
     
     
         11 . The method of  claim 1 , wherein the frequency of the sampling is higher than the rotation frequency of substrate rotation by multiple times. 
     
     
         12 . The method of  claim 1 , further comprising:
 measuring temperatures of the substrate at a plurality of points at one or more radial locations; and   adjusting at least one of power level, frequency, phase, or amplitude of one or more heating elements according to the measured temperatures of the plurality of points along the radial location corresponding to the one or more heating elements.   
     
     
         13 . The method of  claim 12 , further comprising determining temperature variations within the one or more radial locations from the measured temperatures, and the adjusting reduces the temperature variations. 
     
     
         14 . A controller comprising software configured to:
 rotate a substrate on a substrate support;   heat the substrate by directing energy towards a processing volume; and   sample a sensor directed to a radial location at a frequency equal to or higher than a rotation frequency of substrate rotation to measure temperatures at a plurality of points at the radial location; and   adjust at least one of power level, frequency, phase, or amplitude of one or more heating elements according to the measured temperatures of the plurality of points.   
     
     
         15 . A processing chamber, comprising:
 a chamber body defining a processing volume;   a quartz window;   a substrate support disposed in the processing volume;   a first heating source operable to direct energy towards the processing volume through the quartz window, wherein the first heating source comprises a plurality of heating elements grouped in a plurality of concentric heating zones;   a temperature sensor configured to measure temperatures at a plurality of locations; and   a second heating source operable to direct pulsed energy towards the processing volume.   
     
     
         16 . The processing chamber of  claim 15 , wherein the second heating source comprises one or more second heating elements grouped in one or more azimuthally controlled zones. 
     
     
         17 . The processing chamber of  claim 16 , wherein the one or more second heating elements comprise laser diodes, light emitting diodes (LEDs), or lamps. 
     
     
         18 . The processing chamber of  claim 16 , wherein the one or more azimuthally controlled zones are disposed within the plurality of concentric heating zones. 
     
     
         19 . The processing chamber of  claim 15 , further comprising:
 a system controller operable to adjust at least one of power level, frequency, phase, or amplitude of the pulsed energy from the second heating source.   
     
     
         20 . The processing chamber of  claim 15 , wherein the temperature sensor is configured to measure the temperatures along different radial locations in the processing volume.