Automatic sampling of hot phosphoric acid for the determination of chemical element concentrations and control of semiconductor processes

Abstract

Systems and methods for automatic sampling of a sample for the determination of chemical element concentrations and control of semiconductor processes are described. A system embodiment includes a remote sampling system configured to collect a sample of phosphoric acid at a first location, the remote sampling system including a remote valve having a holding loop coupled thereto; and an analysis system configured for positioning at a second location remote from the first location, the analysis system coupled to the remote valve via a transfer line, the analysis system including an analysis device configured to determine a concentration of one or more components of the sample of phosphoric acid and including a sample pump at the second location configured to introduce the sample from the holding loop into the transfer line for analysis by the analysis device.

1 .- 20 . (canceled) 
     
     
         21 . A system for determining chemical element concentrations of a sample, the system comprising:
 a sampling system configured to collect the sample, the sample including at least phosphoric acid, the sampling system including a valve having a holding loop coupled thereto, the valve configured to selectively control flow of the sample through the holding loop; and   an analysis system coupled to the valve via a transfer line, the analysis system including:
 an analysis device configured to determine a concentration of one or more components of the sample, and 
 a sample pump configured to introduce the sample from the holding loop into the transfer line for analysis by the analysis device. 
   
     
     
         22 . The system of  claim 21 , wherein the sample has a temperature from about 150° C. to about 180° C. at the sampling system. 
     
     
         23 . The system of  claim 21 , wherein the analysis system further includes a local sample valve coupled to the valve via the transfer line and coupled to the analysis device. 
     
     
         24 . The system of  claim 21 , further comprising:
 a thermal sheath surrounding at least a portion of the transfer line.   
     
     
         25 . The system of  claim 24 , wherein the thermal sheath includes a temperature-regulated fluid in an annular region between the thermal sheath and the transfer line. 
     
     
         26 . The system of  claim 21 , wherein the analysis system includes at least one of a carrier pump coupled to the valve via a carrier fluid line, a diluent pump coupled to the valve via a diluent fluid line, or a standard pump coupled to the valve via a standard fluid line. 
     
     
         27 . The system of  claim 26 , further comprising:
 a thermal sheath surrounding at least a portion of the transfer line and at least one of the carrier fluid line, the diluent fluid line, or the standard fluid line.   
     
     
         28 . The system of  claim 27 , wherein the thermal sheath includes a temperature-regulated fluid in an annular region between the thermal sheath and the transfer line. 
     
     
         29 . The system of  claim 27 , wherein the at least one of the carrier fluid line, the diluent fluid line, or the standard fluid line is positioned in an annular region between the thermal sheath and the transfer line. 
     
     
         30 . The system of  claim 21 , further including a communicative coupling, the communicative coupling configured to provide a control signal between the analysis system and one or more of a heater of a phosphoric acid etching system, a recirculation pump configured to recirculate phosphoric acid of the phosphoric acid etching system, or a pump configured to introduce fresh phosphoric acid to the phosphoric acid etching system. 
     
     
         31 . The system of  claim 30 , wherein the control signal is based on the concentration of one or more components of the sample determined by the analysis system. 
     
     
         32 . The system of  claim 30 , wherein the control signal is configured to maintain a silicon concentration in the phosphoric acid etching system within about 50 ppm. 
     
     
         33 . A method for determining chemical element concentrations of a sample, the method comprising:
 receiving the sample with a sampling system, the sample including at least phosphoric acid;   introducing the sample into a holding loop of the sampling system via operation of a pump, the holding loop in fluid communication with a valve, the valve configured to selectively control flow of the sample through the holding loop;   introducing at least one of a carrier fluid, a diluent fluid, or a standard fluid to the sample at the remote system;   transferring the sample from the sampling system through a transfer line via operation of a second pump; and   determining a concentration of a chemical element in the sample via an analysis device.   
     
     
         34 . The method of  claim 33 , wherein the sample has a temperature from about 150° C. to about 180° C. at the sampling system. 
     
     
         35 . The method of  claim 33 , further comprising:
 controlling a temperature of the sample during the step of transferring the sample from the sampling system through the transfer line to the analysis device via operation of the second pump positioned.   
     
     
         36 . The method of  claim 35 , wherein controlling a temperature of the sample includes transferring the sample of phosphoric acid from the sampling system through the transfer line, wherein the transfer line is positioned concentrically within a thermal sheath. 
     
     
         37 . The method of  claim 36 , wherein at least one of a carrier fluid line, a diluent fluid line, or a standard fluid line is positioned in a region between the transfer line and the thermal sheath. 
     
     
         38 . The method of  claim 35 , wherein controlling the temperature of the sample during the step of transferring the sample includes at least one of cooling the sample to, or maintaining the sample of phosphoric acid at, a temperature from about 30° C. to about 100° C. 
     
     
         39 . The method of  claim 33 , further comprising:
 providing a control signal to one or more of a heater of a phosphoric acid etching system at the first location, a recirculation pump configured to recirculate phosphoric acid of the phosphoric acid etching system, or a pump configured to introduce fresh phosphoric acid to the phosphoric acid etching system, the control signal based on the concentration of the chemical element in the sample determined via the analysis device.   
     
     
         40 . The method of  claim 39 , wherein the control signal is configured to maintain a silicon concentration in the phosphoric acid etching system within about 50 ppm.