Semiconductor device and method

Abstract

A semiconductor device and method of manufacture are provided which utilize a remote plasma process which reduces or eliminates segregation of material. By reducing segregation of the material, overlying conductive material can be deposited on a smoother interface. By depositing on smoother interfaces, overall losses of the deposited material may be avoided, which improves the overall yield.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, the method comprising:
 forming a contact to a source/drain region, the contact being adjacent to a semiconductor fin;   depositing a dielectric layer over the contact;   exposing the contact through the dielectric layer;   oxidizing a first portion of the contact;   removing the first portion with a remote plasma process, the remote plasma process utilizing an inductively coupled hydrogen plasma; and   depositing a conductive material in physical contact with the contact.   
     
     
         2 . The method of  claim 1 , wherein the depositing the conductive material deposits tungsten. 
     
     
         3 . The method of  claim 1 , wherein the remote plasma process uses hydrogen as a precursor. 
     
     
         4 . The method of  claim 1 , wherein the removing the first portion with the remote plasma process uses a pressure of between about 1 Torr and about 2 Torr. 
     
     
         5 . The method of  claim 4 , wherein the removing the first portion with the remote plasma process uses a temperature of about 200° C. 
     
     
         6 . The method of  claim 1 , wherein the contact comprises cobalt. 
     
     
         7 . The method of  claim 6 , wherein the remote plasma process causes the cobalt to segregate no more than 50%. 
     
     
         8 . A method of manufacturing a semiconductor device, the method comprising:
 forming an opening through a dielectric layer to expose a source/drain contact;   oxidizing a portion of the source/drain contact to form a base layer;   removing the base layer with a remote plasma process, the remote plasma process utilizing an inductively coupled hydrogen plasma; and   depositing a conductive material onto the source/drain contact.   
     
     
         9 . The method of  claim 8 , wherein the remote plasma process also utilizes an argon plasma. 
     
     
         10 . The method of  claim 8 , wherein the removing the base layer is performed at a pressure of between about 1 Torr and about 2 Torr. 
     
     
         11 . The method of  claim 10 , wherein the removing the base layer is performed at a temperature of about 200° C. 
     
     
         12 . The method of  claim 8 , wherein the source/drain contact comprises cobalt. 
     
     
         13 . The method of  claim 8 , wherein the conductive material comprises tungsten. 
     
     
         14 . The method of  claim 8 , further comprising implanting germanium into the conductive material. 
     
     
         15 . A method of manufacturing a semiconductor device, the method comprising:
 recessing a source/drain contact through an opening in a dielectric layer;   oxidizing a top surface of the source/drain contact through the opening to form a base layer;   removing the base layer with a hydrogen plasma and an argon plasma, wherein the hydrogen plasma and argon plasma are generated in a remote plasma unit; and   depositing a conductive material into the opening.   
     
     
         16 . The method of  claim 15 , wherein the source/drain contact comprises cobalt. 
     
     
         17 . The method of  claim 16 , wherein the depositing the conductive material deposits tungsten. 
     
     
         18 . The method of  claim 14 , further comprising implanting germanium into the conductive material. 
     
     
         19 . The method of  claim 18 , further comprising planarizing the conductive material. 
     
     
         20 . The method of  claim 14 , further comprising, after the removing the base layer with the hydrogen plasma and the argon plasma, exposing the source/drain contact to a second plasma generated using a charge coupled plasma generation process.