Contact Structure For Semiconductor Device

Abstract

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gate structure, a layer of dielectric material over the S/D contact structure and over the gate structure, a layer of organometallic material formed through the layer of dielectric material, and a trench conductor layer formed through the layer of dielectric material and in contact with the S/D contact structure and the gate structure. The layer of organometallic material can be between the layer of dielectric material and the trench conductor layer.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a substrate;   a gate structure disposed on the substrate;   a contact structure, comprising:
 a conductive layer disposed on the gate structure; and 
 an organometallic layer surrounding the conductive layer; and 
   a dielectric layer surrounding the contact structure.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the organometallic layer comprises organoaluminium. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the organometallic layer comprises a transition metallic element. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the organometallic layer comprises a platinum-group metallic element. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the organometallic layer comprises hafnium, titanium, tantalum, tungsten, or ruthenium. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the organometallic layer is non-overlapping with the gate structure. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the organometallic layer comprises a thickness of about 0.1 nm to about 0.6 nm. 
     
     
         8 . The semiconductor device of  claim 1 , wherein a ratio of a thickness of the organometallic layer to a width of the conductive layer is about 0.001 to about 0.03. 
     
     
         9 . The semiconductor device of  claim 1 , further comprising a gate spacer disposed along a sidewall of the gate structure, wherein the organometallic layer is disposed on and in contact with the gate spacer. 
     
     
         10 . The semiconductor device of  claim 1 , further comprising a metal layer disposed on and in contact with the organometallic layer. 
     
     
         11 . A semiconductor device, comprising:
 a substrate;   a source/drain (S/D) region disposed on the substrate;   a first conductive structure, comprising:
 a first metal layer disposed on the S/D region; and 
 a conductive nitride layer disposed on the metal layer; and 
   a second conductive structure, comprising:
 a second metal layer disposed on the first metal layer; and 
 a carbon-based layer disposed surrounding the second metal layer and on the first metal layer. 
   
     
     
         12 . The semiconductor device of  claim 11 , wherein the carbon-based layer comprises organoaluminium. 
     
     
         13 . The semiconductor device of  claim 11 , wherein the carbon-based layer comprises a transition metallic element. 
     
     
         14 . The semiconductor device of  claim 11 , wherein the second metal layer comprises a ruthenium layer. The semiconductor device of  claim 11 , wherein the conductive nitride layer and the carbon-based layer are non-overlapping with each other. 
     
     
         16 . The semiconductor device of  claim 11 , further comprising a third metal layer disposed on and in contact with the carbon-based layer. 
     
     
         17 . A semiconductor device, comprising:
 a substrate;   a gate structure disposed on the substrate;   a gate contact structure, comprising:
 a first conductive layer comprising a first metal disposed on the gate structure, and 
 a first nucleation layer comprising a metallic material disposed on the first conductive layer; 
   a source/drain (S/D) region disposed on the substrate;   a S/D contact structure, comprising:
 a second conductive layer comprising a second metal disposed on the S/D region, and 
 a nitride layer disposed on the second conductive layer; and 
 a conductive structure, comprising: 
 a third conductive layer comprising the first metal disposed on the S/D contact structure; and 
 a second nucleation layer comprising the metallic material disposed on the third conductive layer. 
   
     
     
         18 . The semiconductor device of  claim 17 , wherein the metallic material comprises organoaluminium. 
     
     
         19 . The semiconductor device of  claim 17 , wherein the metallic material comprises a transition metallic element and a platinum-group metallic element. 
     
     
         20 . The semiconductor device of  claim 17 , wherein the third conductive layer comprises a ruthenium layer.